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2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)最新文献

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Single Event Latch-up and Total Ionizing Dose Characterization of a Cobham Designed Smart Power Switch Controller Cobham设计的智能电源开关控制器的单事件闭锁和总电离剂量特性
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Pub Date : 2020-11-01 DOI: 10.1109/REDW51883.2020.9325838
M. Von Thun, Younes Lotfi, T. Meade, A. Turnbull
{"title":"Single Event Latch-up and Total Ionizing Dose Characterization of a Cobham Designed Smart Power Switch Controller","authors":"M. Von Thun, Younes Lotfi, T. Meade, A. Turnbull","doi":"10.1109/REDW51883.2020.9325838","DOIUrl":"https://doi.org/10.1109/REDW51883.2020.9325838","url":null,"abstract":"Single event latch-up and total ionizing dose characterization data is presented for the newly designed and fabricated Cobham radiation-hardened Smart Power Switch Controller.","PeriodicalId":127384,"journal":{"name":"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129961007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Neutron Radiation Failure-in-time Test of 1200V and 1700V SiC Power Transistors 1200V和1700V SiC功率晶体管中子辐射及时失效试验
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Pub Date : 2020-11-01 DOI: 10.1109/REDW51883.2020.9325843
Moinuddin Ahmed, Christopher Stankus, A. Yanguas-Gil, J. Hryn, S. Wender, K. Gunthoti
{"title":"Neutron Radiation Failure-in-time Test of 1200V and 1700V SiC Power Transistors","authors":"Moinuddin Ahmed, Christopher Stankus, A. Yanguas-Gil, J. Hryn, S. Wender, K. Gunthoti","doi":"10.1109/REDW51883.2020.9325843","DOIUrl":"https://doi.org/10.1109/REDW51883.2020.9325843","url":null,"abstract":"This research is focused on the accelerated in-situ neutron radiation failure-in-time test (at a sea-level height) that was performed on 1200V and 1700V SiC power n-MOSFETs from 3 different manufacturers. The test was performed at room temperature and 150 °C with an average neutron flux of 1×105 n/cm2-sec above 1.5 MeV neutron energy. The room temperature samples demonstrated higher FIT values compared to 150 °C samples for both 1200V and 1700V devices. The maximum FIT of 8 and 28 was measured for 1200V and 1700V devices respectively at room temperature.","PeriodicalId":127384,"journal":{"name":"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123821876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
[Introductory remarks] (开场白)
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Pub Date : 2020-11-01 DOI: 10.1109/redw51883.2020.9325835
F. Irom
{"title":"[Introductory remarks]","authors":"F. Irom","doi":"10.1109/redw51883.2020.9325835","DOIUrl":"https://doi.org/10.1109/redw51883.2020.9325835","url":null,"abstract":"","PeriodicalId":127384,"journal":{"name":"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)","volume":"175 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116289999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation Test Results for ISSI 1 Gb DDR2 ISSI 1gb DDR2辐射测试结果
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Pub Date : 2020-11-01 DOI: 10.1109/REDW51883.2020.9325846
S. Guertin, A. Daniel, Wilson P. Parker, D. Nguyen, S. Delaney
{"title":"Radiation Test Results for ISSI 1 Gb DDR2","authors":"S. Guertin, A. Daniel, Wilson P. Parker, D. Nguyen, S. Delaney","doi":"10.1109/REDW51883.2020.9325846","DOIUrl":"https://doi.org/10.1109/REDW51883.2020.9325846","url":null,"abstract":"ISSI IS46DR16640B and IS46DR81280B DDR2 1Gb devices are studied for radiation effects. Special emphasis is placed on understanding the device-level behavior and recovery of various error modes. An overview of all identified key radiation degradation and disruptions are provided. This includes TID and SEE. Key results are presented for standard SBU, MBU, SEFI, stuck bits, and TID performance. For the case of device-level disruptions (such as SEFIs that cause the device to stop responding), recovery requirements are explored to assist users in recovering operation without power-cycling. Power cycling was not necessary for any observed SEFI mode. The established ratio of SEFIs that may require power cycle to all SEFIs is below 0.0037. SEFIs are seen to have controller-dependent signatures with some controller architectures suppressing some, or all, of the erroneous data delivered during a SEFI.","PeriodicalId":127384,"journal":{"name":"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116615782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-High Total Ionizing Dose Effects in a Highly Integrated and RF-Agile Transceiver 超高总电离剂量效应在高度集成和射频敏捷收发器
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Pub Date : 2020-11-01 DOI: 10.1109/REDW51883.2020.9325832
J. Budroweit, M. Jaksch, G. Borghello
{"title":"Ultra-High Total Ionizing Dose Effects in a Highly Integrated and RF-Agile Transceiver","authors":"J. Budroweit, M. Jaksch, G. Borghello","doi":"10.1109/REDW51883.2020.9325832","DOIUrl":"https://doi.org/10.1109/REDW51883.2020.9325832","url":null,"abstract":"This paper presents the characterization of total ionizing dose (TID) effects on an highly-integrated radio frequency (RF) agile transceiver to ultra-high dose levels. The DUT shows no RF-specific degradation up to 40 Mrad(SiO2). Malfunctions on the digital interfaces are assessed at ~45 Mrad(SiO2) which results into a non-functional operation of the DUT. Additional TID testing to 80 Mrad(SiO2) has been performed to investigate further behavior. Rebound effects during 100°C tempered post-test annealing to almost nominal operations are observed.","PeriodicalId":127384,"journal":{"name":"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128706978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Single-Event Effects Test Results of the Intersil ISL73141SEH Precision SAR ADC Intersil ISL73141SEH精密SAR ADC单事件效应测试结果
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Pub Date : 2020-11-01 DOI: 10.1109/REDW51883.2020.9325849
J. Harris, L. Pearce, N. V. van Vonno, E. Thomson
{"title":"Single-Event Effects Test Results of the Intersil ISL73141SEH Precision SAR ADC","authors":"J. Harris, L. Pearce, N. V. van Vonno, E. Thomson","doi":"10.1109/REDW51883.2020.9325849","DOIUrl":"https://doi.org/10.1109/REDW51883.2020.9325849","url":null,"abstract":"We report the results of destructive and nondestructive single-event effects (SEE) testing of the Intersil ISL73141SEH 14-bit 750/1000ksps precision SAR ADC.","PeriodicalId":127384,"journal":{"name":"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125951918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
[Copyright notice] (版权)
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Pub Date : 2020-11-01 DOI: 10.1109/redw51883.2020.9325825
{"title":"[Copyright notice]","authors":"","doi":"10.1109/redw51883.2020.9325825","DOIUrl":"https://doi.org/10.1109/redw51883.2020.9325825","url":null,"abstract":"","PeriodicalId":127384,"journal":{"name":"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131457565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Aerospace Corporation’s Compendium of Recent Radiation Effect Results 航空航天公司最近的辐射效应结果汇编
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Pub Date : 2020-11-01 DOI: 10.1109/REDW51883.2020.9325837
S. Davis, D. Mabry, A. Yarbrough, R. Koga, C. Roske, K. S. MacGowan, J. Scarpulla, V. Hunt, A. Wright, J. Taggart
{"title":"The Aerospace Corporation’s Compendium of Recent Radiation Effect Results","authors":"S. Davis, D. Mabry, A. Yarbrough, R. Koga, C. Roske, K. S. MacGowan, J. Scarpulla, V. Hunt, A. Wright, J. Taggart","doi":"10.1109/REDW51883.2020.9325837","DOIUrl":"https://doi.org/10.1109/REDW51883.2020.9325837","url":null,"abstract":"Single Event Effect and Total Ionizing Dose testing was performed on several commercial components to determine the response of these components to the space radiation environment. Testing used heavy ions, protons, and gamma rays.","PeriodicalId":127384,"journal":{"name":"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117149142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Single Event Upset Results from the Radiation Hardened Electronic Memory Experiment in a Polar Orbit 极轨辐射强化电子记忆实验的单事件扰动结果
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Pub Date : 2020-11-01 DOI: 10.1109/REDW51883.2020.9325847
D. Alexander, Alonzo Vera, Jeff Love, W. Morris, D. Gifford, Zach Daniels., Katharine Major, M. McHarg, P. Gresham, Ian Moffett, R. Cress, C. Maldonado, G. Wilson, R. L. Balthazor, J. Harley
{"title":"Single Event Upset Results from the Radiation Hardened Electronic Memory Experiment in a Polar Orbit","authors":"D. Alexander, Alonzo Vera, Jeff Love, W. Morris, D. Gifford, Zach Daniels., Katharine Major, M. McHarg, P. Gresham, Ian Moffett, R. Cress, C. Maldonado, G. Wilson, R. L. Balthazor, J. Harley","doi":"10.1109/REDW51883.2020.9325847","DOIUrl":"https://doi.org/10.1109/REDW51883.2020.9325847","url":null,"abstract":"Results are presented from the Radiation Hardened Electronic Memory Experiment (RHEME-2) performed on the STPSat-5 mission in a polar orbit.","PeriodicalId":127384,"journal":{"name":"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131511244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
PROTON characterization for a Dual 12bits 1.5Gsps Analog to Digital Converter dedicated up to S-Band domain (4.3GHz Bandwidth) 专用于s波段域(4.3GHz带宽)的双12位1.5Gsps模数转换器的质子特性
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Pub Date : 2020-11-01 DOI: 10.1109/REDW51883.2020.9325827
O. Bonnet, R. Pilard, E. Savasta, J. Palmigiani, Vincent Hibon
{"title":"PROTON characterization for a Dual 12bits 1.5Gsps Analog to Digital Converter dedicated up to S-Band domain (4.3GHz Bandwidth)","authors":"O. Bonnet, R. Pilard, E. Savasta, J. Palmigiani, Vincent Hibon","doi":"10.1109/REDW51883.2020.9325827","DOIUrl":"https://doi.org/10.1109/REDW51883.2020.9325827","url":null,"abstract":"The Dual 12bits 1.5Gsps ADC is a dual channel single core S-band capable ADC intended for space applications, built using a true single core architecture providing high spectral purity. This device, designed with Teledyne E2V hardening expertise, and using the BiCMOS9 technology platform (featuring SiGeC NPN bipolar technology ft/fmax=166/175GHz and 0.13µm CMOS) from STMicroelectronics, has successfully passed the proton test, demonstrating its suitability in spaceborn digital receivers capable of sampling directly in the S-Band (2 - 4 GHz). With this test, we have validated the performances of our device, as that the proton contribution to the SEU error rate, estimated by the use of the PROFIT method with the heavy ions results, is very close to the results of the proton test.","PeriodicalId":127384,"journal":{"name":"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131075289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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