{"title":"超高总电离剂量效应在高度集成和射频敏捷收发器","authors":"J. Budroweit, M. Jaksch, G. Borghello","doi":"10.1109/REDW51883.2020.9325832","DOIUrl":null,"url":null,"abstract":"This paper presents the characterization of total ionizing dose (TID) effects on an highly-integrated radio frequency (RF) agile transceiver to ultra-high dose levels. The DUT shows no RF-specific degradation up to 40 Mrad(SiO2). Malfunctions on the digital interfaces are assessed at ~45 Mrad(SiO2) which results into a non-functional operation of the DUT. Additional TID testing to 80 Mrad(SiO2) has been performed to investigate further behavior. Rebound effects during 100°C tempered post-test annealing to almost nominal operations are observed.","PeriodicalId":127384,"journal":{"name":"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Ultra-High Total Ionizing Dose Effects in a Highly Integrated and RF-Agile Transceiver\",\"authors\":\"J. Budroweit, M. Jaksch, G. Borghello\",\"doi\":\"10.1109/REDW51883.2020.9325832\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the characterization of total ionizing dose (TID) effects on an highly-integrated radio frequency (RF) agile transceiver to ultra-high dose levels. The DUT shows no RF-specific degradation up to 40 Mrad(SiO2). Malfunctions on the digital interfaces are assessed at ~45 Mrad(SiO2) which results into a non-functional operation of the DUT. Additional TID testing to 80 Mrad(SiO2) has been performed to investigate further behavior. Rebound effects during 100°C tempered post-test annealing to almost nominal operations are observed.\",\"PeriodicalId\":127384,\"journal\":{\"name\":\"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW51883.2020.9325832\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW51883.2020.9325832","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra-High Total Ionizing Dose Effects in a Highly Integrated and RF-Agile Transceiver
This paper presents the characterization of total ionizing dose (TID) effects on an highly-integrated radio frequency (RF) agile transceiver to ultra-high dose levels. The DUT shows no RF-specific degradation up to 40 Mrad(SiO2). Malfunctions on the digital interfaces are assessed at ~45 Mrad(SiO2) which results into a non-functional operation of the DUT. Additional TID testing to 80 Mrad(SiO2) has been performed to investigate further behavior. Rebound effects during 100°C tempered post-test annealing to almost nominal operations are observed.
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