Radiation Test Results for ISSI 1 Gb DDR2

S. Guertin, A. Daniel, Wilson P. Parker, D. Nguyen, S. Delaney
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Abstract

ISSI IS46DR16640B and IS46DR81280B DDR2 1Gb devices are studied for radiation effects. Special emphasis is placed on understanding the device-level behavior and recovery of various error modes. An overview of all identified key radiation degradation and disruptions are provided. This includes TID and SEE. Key results are presented for standard SBU, MBU, SEFI, stuck bits, and TID performance. For the case of device-level disruptions (such as SEFIs that cause the device to stop responding), recovery requirements are explored to assist users in recovering operation without power-cycling. Power cycling was not necessary for any observed SEFI mode. The established ratio of SEFIs that may require power cycle to all SEFIs is below 0.0037. SEFIs are seen to have controller-dependent signatures with some controller architectures suppressing some, or all, of the erroneous data delivered during a SEFI.
ISSI 1gb DDR2辐射测试结果
研究了ISSI IS46DR16640B和IS46DR81280B DDR2 1Gb器件的辐射效应。特别强调的是理解设备级的行为和各种错误模式的恢复。概述了所有已确定的关键辐射退化和干扰。这包括TID和SEE。给出了标准SBU、MBU、SEFI、卡钻和TID性能的关键结果。对于设备级中断(例如导致设备停止响应的sefi)的情况,探讨了恢复需求,以帮助用户在不进行电源循环的情况下恢复操作。任何观察到的SEFI模式都不需要电源循环。建立的可能需要功率循环的sefi与所有sefi的比率低于0.0037。SEFI具有与控制器相关的签名,某些控制器架构会抑制在SEFI期间传递的部分或全部错误数据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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