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2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)最新文献

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A new series resistance extraction method for junctionless nanowire transistors 一种新的无结纳米线晶体管串联电阻提取方法
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731338
R. Trevisoli, R. Doria, M. de Souza, S. Barraud, M. Vinet, M. Pavanello
{"title":"A new series resistance extraction method for junctionless nanowire transistors","authors":"R. Trevisoli, R. Doria, M. de Souza, S. Barraud, M. Vinet, M. Pavanello","doi":"10.1109/SBMICRO.2016.7731338","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731338","url":null,"abstract":"Series resistance can severely affect the electrical behavior of such Junctionless Nanowire Transistors. The aim of this work is to propose a new method for the extraction of the series resistance in Junctionless Nanowire Transistors. The method is validated by means of tridimensional numerical simulations and experimental results, using transistors with different widths and doping concentrations.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"267 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114176013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Microring photodetection in silicon photonic integrated circuits 硅光子集成电路中的微环光探测
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731345
R. Panepucci
{"title":"Microring photodetection in silicon photonic integrated circuits","authors":"R. Panepucci","doi":"10.1109/SBMICRO.2016.7731345","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731345","url":null,"abstract":"A tunable microring resonator (MRR) with active p- and n-type doped regions is used for photodetection in photonic integrated circuits. We compare results of this device with that of an integrated Ge-photodetector (PD) connected to the MRR drop-port. A circuit containing both devices was designed and experimentally characterized. This device is an attractive alternative for applications such as a thermal compensation building block as well as sensor applications.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114306669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 40 GHz-platform using soft substrates 使用软基板的40 ghz平台
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731349
C. Finardi, A. F. Ponchet, C. B. Adamo, R. C. Teixeira, R. Panepucci, A. Flacker
{"title":"A 40 GHz-platform using soft substrates","authors":"C. Finardi, A. F. Ponchet, C. B. Adamo, R. C. Teixeira, R. Panepucci, A. Flacker","doi":"10.1109/SBMICRO.2016.7731349","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731349","url":null,"abstract":"The paper presents a technological solution for high frequency packaging platform to at least 40 GHz. This approach is based on soft substrate processing. We present results of high frequency packaging of important building blocks, such as bias-T, transimpedance amplifiers. The paper demonstrates a solution for high-frequency hybridization that can be implemented with standard substrates.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124820931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CMOS image sensor with FPN reduction by correlated double sampling in current mode 电流模式下相关双采样FPN降阶的CMOS图像传感器
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731351
R. A. Souza, L. G. M. Ventura, L. P. Reis, D. W. de Lima Monteiro, L. P. Salles
{"title":"CMOS image sensor with FPN reduction by correlated double sampling in current mode","authors":"R. A. Souza, L. G. M. Ventura, L. P. Reis, D. W. de Lima Monteiro, L. P. Salles","doi":"10.1109/SBMICRO.2016.7731351","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731351","url":null,"abstract":"The Active Pixel Sensor (APS) has been the preferred choice for CMOS image sensor topology in the last decades. However, due to process variations, parameter mismatches arise and lead to Fixed-Pattern Noise (FPN), which occurs across the APS array. A common technique to reduce FPN is the use of Correlated Double Sampling (CDS) in voltage mode to reduce the FPN, but it increases the complexity of either the pixel or the external circuitry. This paper, on the other hand, presents a CDS circuit operating in current mode to reduce FPN. The subtraction operation in current mode requires simpler circuitry, optimizing the trade-off between FPN reduction and the demand for silicon area. This technique does not require any topology change in the APS pixel itself or in its basic operation cycle. Simulations and experimental results show that the proposed technique can reduce the total FPN by more than 40%.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"156 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121377918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Porous silicon passivation for applications in sensors and photovoltaics: Optical characterization 用于传感器和光电器件的多孔硅钝化:光学特性
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731353
Rosimara P. Toledo, C. S. Dias, D. R. Huanca, S. Zaccaro, W. J. Salcedo
{"title":"Porous silicon passivation for applications in sensors and photovoltaics: Optical characterization","authors":"Rosimara P. Toledo, C. S. Dias, D. R. Huanca, S. Zaccaro, W. J. Salcedo","doi":"10.1109/SBMICRO.2016.7731353","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731353","url":null,"abstract":"Porous silicon monolayers with different porosities were produced by etching p-type crystalline silicon (c-Si) in HF-based electrolytes. Mesoporous structures were achieved in heavily doped c-Si anodized into HF:ethanol, whereas for macroporous ones slightly doped c-Si was etched in HF and dimethylformamide solution. After electrochemical oxidation of them, it was found that depending on both the porosity and remaining cSi size, the thickness of them becomes contracted, while the reduction of the effective refractive index (ERI) is associated to the presence of silicon oxide within the structures. The optical reflectance of the as-etched, oxidized and polymer deposited macroporous silicon shows that they are excellent materials for sensor and photovoltaic application.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134024563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Diffuse interface modeling for electromigration induced void growth 电迁移诱导空洞生长的扩散界面建模
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731341
L. M. Queiroz, R. L. de Orio
{"title":"Diffuse interface modeling for electromigration induced void growth","authors":"L. M. Queiroz, R. L. de Orio","doi":"10.1109/SBMICRO.2016.7731341","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731341","url":null,"abstract":"Modeling and simulation of the temporal evolution of electromigration voids are critical to evaluate the reliability of interconnects of modern integrated circuits. In this work, the diffuse interface model is applied to investigate two different mechanisms of the void evolution due to electromigration. Two-dimensional numerical simulations have been performed and interconnect resistance increase has been monitored. The results recovered the main features of the electromigration induced failure observed in experiments.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122539713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of heavy-ion particles striking regions inside and between PIN photodetectors PIN光电探测器内部和之间重离子粒子撞击区域的分析
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731365
R. Buhler, A. L. Perinm, C. Novo, M. Silveira, R. Giacomini
{"title":"Analysis of heavy-ion particles striking regions inside and between PIN photodetectors","authors":"R. Buhler, A. L. Perinm, C. Novo, M. Silveira, R. Giacomini","doi":"10.1109/SBMICRO.2016.7731365","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731365","url":null,"abstract":"This paper analyses lateral PIN diodes fabricated in the IBM 0.13 technology, intended to be used in a photodetector pixel structure in future developments. Experimental electrical characterization is used to adjust numerical simulation's models that are used to evaluate the radiation analysis in PIN diodes in dark condition for heavy-ion radiation effects. Particle beam radiation, present in hazard environments, may cause circuit malfunctions due to interference in the device response. These variables impact the PIN diode performance, which are important devices to sensor applications, including those in space and nuclear facilities environments. The results pointed out the magnitude of the peak in the cathode current of a diode while the chip is struck by a particle inside the device's area, as well as in the device's neighborhood.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117039757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasma-treated multilayer graphene: Synthesis and applications 等离子体处理多层石墨烯:合成与应用
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731322
R. V. Gelamo, Gabriel de S Augusto, L. G. B. Machuno, S. Moshkalev, A. Vaz, C. Rout, S. Sahoo
{"title":"Plasma-treated multilayer graphene: Synthesis and applications","authors":"R. V. Gelamo, Gabriel de S Augusto, L. G. B. Machuno, S. Moshkalev, A. Vaz, C. Rout, S. Sahoo","doi":"10.1109/SBMICRO.2016.7731322","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731322","url":null,"abstract":"This work presents the study of multilayer graphene (MLG) obtainment and functionalization using plasmas of different gas species. MLGs were obtained using mechanical exfoliation methods of pre-exfoliated graphite in acids. The functionalization of MLGs was made through cold plasma using mixtures of CO2 and Ar gases. Investigation of electrical, optical and morphological properties are presented and discussed. Structure and chemical composition were investigated with Raman, XPS and other techniques. MLGs showed a certain incorporation of oxygen as can be seen in XPS results. We investigated the treatment conditions and the changes in the materials obtained particularly the properties of MLGs films and pellets. Applications of these treated MLGs in super capacitor devices are herein presented and discussed, enabling applications in electronic devices and energy storage areas.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124742642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advances to Bordetella pertussis diagnosis: Adapting a real time PCR to a lab-on-chip platform 百日咳博德泰拉诊断的进展:将实时PCR应用于芯片实验室平台
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731331
N. Zahra, R. Rampazzo, K. K. Leite, P. H. C. Schluga, M. Cereda, M. Bianchessi, L. G. Morello, M. Krieger, A. Costa
{"title":"Advances to Bordetella pertussis diagnosis: Adapting a real time PCR to a lab-on-chip platform","authors":"N. Zahra, R. Rampazzo, K. K. Leite, P. H. C. Schluga, M. Cereda, M. Bianchessi, L. G. Morello, M. Krieger, A. Costa","doi":"10.1109/SBMICRO.2016.7731331","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731331","url":null,"abstract":"Whooping cough is caused by the bacteria Bordetella pertussis and, despite massive global vaccination campaigns, still poses a threat to infants, to elders well as to immunocompromised patients. In this work, we used a silicon lab-on-chip and a portable, lightweight thermocycler to develop a molecular-based detection reaction for two B. pertussis genes (IS48I and ptxS1). Each bacterial target is detected concomitantly to the detection of the human gene 18S. Thus, these duplex reactions have an internal control, which evaluates the performance of the whole system (chip temperature cycling and biological reaction). We found no significant difference between the results obtained in the portable equipment and in the standard benchtop instrument, the ABI7500. The results presented here are a first step towards a point of care test for B. pertussis diagnosis, adapted to primary health centers with low infrastructure as well as small hospitals and private health clinics.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122069889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low-frequency noise in asymmetric self-cascode FD SOI nMOSFETs 非对称自级联码FD SOI nmosfet中的低频噪声
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731354
R. Assalti, R. Doria, M. Pavanello, M. de Souza, D. Flandre
{"title":"Low-frequency noise in asymmetric self-cascode FD SOI nMOSFETs","authors":"R. Assalti, R. Doria, M. Pavanello, M. de Souza, D. Flandre","doi":"10.1109/SBMICRO.2016.7731354","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731354","url":null,"abstract":"This paper investigates the origin of low-frequency noise in Asymmetric Self-Cascode Fully Depleted SOI nMOSFETs biased in linear regime with regards to the variation of gate voltage and the channel doping concentration through experimental results.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115523109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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