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2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)最新文献

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FinFET prototypes fabricated by aluminium hard mask FIB milling for fin definition and SiON/TiN/Al gate stack 通过铝硬掩膜FIB铣削加工fin定义和SiON/TiN/Al栅极堆栈制备FinFET原型
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731324
A. Leonhardt, L. Petersen Barbosa Lima, Frederico Hummel Cioldin, M. V. Puydinger dos Santos, J. A. Diniz, L. Manera
{"title":"FinFET prototypes fabricated by aluminium hard mask FIB milling for fin definition and SiON/TiN/Al gate stack","authors":"A. Leonhardt, L. Petersen Barbosa Lima, Frederico Hummel Cioldin, M. V. Puydinger dos Santos, J. A. Diniz, L. Manera","doi":"10.1109/SBMICRO.2016.7731324","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731324","url":null,"abstract":"FinFET prototypes have been fabricated using an aluminium hard mask FIB milling technique for fin definition and SiON/TiN/Al gate stack. A three dimensional fin with sub-100nm dimensions was obtained. Electrical characterisation results are presented and discussed. Maximum transconductance in the linear region of 500nS, leakage current of 10pA and subthreshold slope of 120mV/dec have been obtained at zero bulk bias, showing improvements on previous reported results for devices fabricated using the focused ion beam. Process modifications are suggested to obtain further improvements in electrical response.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131475631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon: A flexible material for bendable electronics and sensors 硅:用于可弯曲电子设备和传感器的柔性材料
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731313
Y. Kervran, K. Kandoussi, Hanpeng Dong, S. Janfaoui, N. Coulon, C. Simon, E. Jacques, T. Mohammed‐Brahim
{"title":"Silicon: A flexible material for bendable electronics and sensors","authors":"Y. Kervran, K. Kandoussi, Hanpeng Dong, S. Janfaoui, N. Coulon, C. Simon, E. Jacques, T. Mohammed‐Brahim","doi":"10.1109/SBMICRO.2016.7731313","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731313","url":null,"abstract":"Directly crystallized deposited silicon at low temperature is shown to be the right material when bendable system including treatment electronics and sensing functions is needed. This is true particularly when process reproducibility, electrical and mechanical reliability of the devices are the most important parameters implying the success of the technology. Indeed, these parameters are the main issues when we need to go beyond the publication of a paper, towards actual commercial application. Electrical and mechanical performances of microcrystalline silicon thin film transistors and deformation sensors on 25 μm thick flexible plastics under high bending, still 0.75 mm curvature radius, are presented. These devices are fabricated directly on this substrate at a maximum temperature of 180°C.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132101061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chemically modified platinum screen-printed electrodes for electrochemical detection of acetylene 用于乙炔电化学检测的化学修饰铂丝网印刷电极
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731323
F. Izumi, C. de Souza, S. G. dos Santos Filho, M. Gongora-Rubio
{"title":"Chemically modified platinum screen-printed electrodes for electrochemical detection of acetylene","authors":"F. Izumi, C. de Souza, S. G. dos Santos Filho, M. Gongora-Rubio","doi":"10.1109/SBMICRO.2016.7731323","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731323","url":null,"abstract":"A three-electrodes potentiostatic cell was fabricated for acetylene detection in the range of 500 to 10000 ppm. The working electrode (sensing) was fabricated by depositing gold on Teflon electrodes. The auxiliary (counter) and the reference electrodes were defined on Al2O3 using platinum serigraphic paste. The platinum screen-printed electrodes were chemically modified by dipping in 1HF(49%):10H2O solution (d-HF) for times ranging from 10 to 120 min to obtain a three-electrodes potentiostatic cell for acetylene detection. Cyclic voltammetry indicated voltage-separation decreasing of the redox peaks and peak-current increasing when time in d-HF was increased. Surface morphology has changed after dipping in d-HF. It was noteworthy that valley-to-peak height and valley area increased, which meant better performance of the auxiliary and reference electrodes. As a result, a stable electrochemical sensor was fabricated with a detection limit of 500 ppm for acetylene dissolved in argon.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131177116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Use of Protek-PSB as structural material for MEMS: Measurement of elastic modulus Protek-PSB作为MEMS结构材料的应用:弹性模量的测量
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731359
Gustavo Marcati A. Alves, R. Mansano
{"title":"Use of Protek-PSB as structural material for MEMS: Measurement of elastic modulus","authors":"Gustavo Marcati A. Alves, R. Mansano","doi":"10.1109/SBMICRO.2016.7731359","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731359","url":null,"abstract":"Protek-PSB is a polymer spin-on coating designed to replace silicon oxide and silicon nitride as hard mask in bulk wet anisotropic etch of silicon. The possibility of application of this material as structural material joins the benefits of low cost fabrication using wet etch with the polymer low cost and mechanical properties. To better evaluate the applicability of this material, we measured the elastic modulus of Protek-PSB coatings using the beam bending method with cantilevered beams of Protek-PSB. We found that the elastic modulus of this material is estimated in 3,10 ± 0,47 GPa, compatible with other polymeric coatings like SU-8.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130691765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low-frequency noise of submicron graded-channel SOI nMOSFETs at high temperature 亚微米梯度沟道SOI nmosfet高温下的低频噪声
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731319
A. R. Molto, R. T. Doria, M. de Souza, D. Flandre, M. Pavanello
{"title":"Low-frequency noise of submicron graded-channel SOI nMOSFETs at high temperature","authors":"A. R. Molto, R. T. Doria, M. de Souza, D. Flandre, M. Pavanello","doi":"10.1109/SBMICRO.2016.7731319","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731319","url":null,"abstract":"This work presents, for the first time, the Low Frequency Noise (LFN) of submicron graded-channel (GC) SOI nMOSFETs as a function of temperature in the range from 300 K up to 500 K. The measured GC SOI devices are from a 150 nm commercial technology from OKI Semiconductors. The results were obtained through experimental measurements in a device with channel length (L) of 240 nm, working in linear regime at VDS=50mV. It is shown that the origin of the noise changes from carrier number fluctuations to mobility fluctuations as the temperature is increased. Additionally, the generation and recombination noise plays a significant role on the overall noise with the temperature rise.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"6 26","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120855014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physical insights on the dynamic response of junctionless nanowire transistors 无结纳米线晶体管动态响应的物理见解
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731339
R. Doria, R. Trevisoli, M. de Souza, M. Pavanello
{"title":"Physical insights on the dynamic response of junctionless nanowire transistors","authors":"R. Doria, R. Trevisoli, M. de Souza, M. Pavanello","doi":"10.1109/SBMICRO.2016.7731339","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731339","url":null,"abstract":"The aim of this work is to present, for the first time, an analysis of the maximum oscillation frequency (fmax) presented by Junctionless Nanowire Transistors (JNTs) as well as its impact and the carriers transit time on the minimum switching time of these devices. It has been observed that despite presenting lower fmax than inversion mode devices, fmax of JNTs is benefited by its lower capacitances along a large interval in its operation range. Also, it has been shown that the transit time can significantly influence on the minimum switching time of long devices, since it can be larger than the minimum oscillation time, what does not occur in shorter JNTs.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"266 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122914770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Formation of nanofibers containing aloe vera using a non-conventional electrospinning setup 使用非常规静电纺丝装置形成含有芦荟的纳米纤维
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731327
R. Furlan, Steven J. Toro de Leon, A. N. Rodrigues da Silva
{"title":"Formation of nanofibers containing aloe vera using a non-conventional electrospinning setup","authors":"R. Furlan, Steven J. Toro de Leon, A. N. Rodrigues da Silva","doi":"10.1109/SBMICRO.2016.7731327","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731327","url":null,"abstract":"In this work we propose a non-conventional electrospinning setup that can be used to obtain a netlike structure with nanofibers entangled and connected through ramifications/nodes. The nanofibers were obtained using a solution with poly (ethylene oxide), a biodegradable polymer, dissolved in commercial aloe vera juice, aiming at applications in tissue engineering. The structure results with the extremities connected to grounded electrodes (separated by 5 cm) and can be easily removed/transferred. SEM analysis reveals that the nanofibers have a uniform diameter of the order of 180 nm. FTIR results show the interaction of aloe vera with PEO, confirming the presence of aloe vera in the nanofibers.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122311657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Teraohm pseudo-resistor experimental characterization aiming at implementation of bio-amplifiers 针对生物放大器实现的太赫兹伪电阻实验表征
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731361
C. F. Pereira, P. Benko, J. Lucchi, R. Giacomini
{"title":"Teraohm pseudo-resistor experimental characterization aiming at implementation of bio-amplifiers","authors":"C. F. Pereira, P. Benko, J. Lucchi, R. Giacomini","doi":"10.1109/SBMICRO.2016.7731361","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731361","url":null,"abstract":"This paper describes the experimental characterization of MOS bipolar pseudo-resistors for a general purpose technology. Very-high resistance values can be obtained in small footprint layouts, allowing the development of high-pass filters with RC constants over 1 second. The pseudo-resistor presents two different behavior regions, and as described in this work, in bio-amplifiers applications, important functions are assigned to each of these regions. 0.13 μm 8HP technology from GlobalFoundries was chosen as the target technology for the prototypes, because of its versatility. Due to the very-low current of pseudo-resistors, a circuit for indirect resistance measurement was proposed and applied. The fabricated devices presented resistances over 1 teraohm and preserved both the linear and the exponential operation regions, proving that they are well suited for bio-amplifier applications.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"24 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113942830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Fabrication and characterization of InGaAsP/Ag luminescent hyperbolic metamaterials InGaAsP/Ag发光双曲型超材料的制备与表征
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731343
J. Smalley, F. Vallini, S. Montoya, Shiva Shahin, B. Kanté, Zhaowei Liu, Y. Fainman, L. Ferrari, C. Riley, E. E. Fullerton
{"title":"Fabrication and characterization of InGaAsP/Ag luminescent hyperbolic metamaterials","authors":"J. Smalley, F. Vallini, S. Montoya, Shiva Shahin, B. Kanté, Zhaowei Liu, Y. Fainman, L. Ferrari, C. Riley, E. E. Fullerton","doi":"10.1109/SBMICRO.2016.7731343","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731343","url":null,"abstract":"We fabricate and characterize a luminescent hyperbolic metamaterial consisting of InGaAsP/Ag multilayers. For the first time, one of the metamaterial constituents is a gain media. The hyperbolic dispersion is confirmed through the anisotropic photoluminescence, with emission strongly dependent on pump polarization.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121169547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The use of DBD plasmas for treatment of PDMS surfaces and adhesion improvement 使用DBD等离子体处理PDMS表面并改善附着力
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731360
F. do Nascimento, S. Moshkalev, M. Machida
{"title":"The use of DBD plasmas for treatment of PDMS surfaces and adhesion improvement","authors":"F. do Nascimento, S. Moshkalev, M. Machida","doi":"10.1109/SBMICRO.2016.7731360","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731360","url":null,"abstract":"In this work we used an atmospheric pressure dielectric barrier discharge plasma to perform treatments of poly(dimethylsiloxane) (PDMS) surfaces in order to improve the adhesion between the samples. The results show that different conditions of plasma treatment can lead to a better adhesion between the PDMS surfaces. If the power delivered to the plasma is increased, the adhesion is better, but the best results are obtained if the vibrational temperature of the nitrogen molecules in the plasma is increased.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124893610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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