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2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)最新文献

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Hafnium-Indium-Zinc oxide thin film transistors using HfO2 as gate dielectric, with both layers deposited by RF sputtering 采用HfO2作为栅极介质，采用射频溅射沉积两层的铪-铟-锌氧化物薄膜晶体管
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731318
C. A. Pons-Flores, I. Hernández, M. Estrada, I. Garduño, A. Cerdeira, J. Tinoco, I. Mejia, R. Picos
{"title":"Hafnium-Indium-Zinc oxide thin film transistors using HfO2 as gate dielectric, with both layers deposited by RF sputtering","authors":"C. A. Pons-Flores, I. Hernández, M. Estrada, I. Garduño, A. Cerdeira, J. Tinoco, I. Mejia, R. Picos","doi":"10.1109/SBMICRO.2016.7731318","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731318","url":null,"abstract":"The electrical performance of RF magnetron sputtered Hafnium-Indium-Zinc-Oxide-based thin film transistors (HIZO TFTs) is compared using two different gate dielectrics: a) RF sputtered HfO<sub>2</sub> and b) thermally grown SiO<sub>2</sub>. For HfO<sub>2</sub> devices, output characteristics showed higher drain-currents capabilities with a reduction of the TFT operation voltage range from 0-15 V, when using SiO<sub>2</sub>, to 0-8 V. The HfO<sub>2</sub> dielectric constant was around 15, measured at 1 kHz. Vt was less than 2 V for HfO<sub>2</sub> devices and around 5 V for SiO<sub>2</sub> devices.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128464478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A compact eigth-terminal piezotransducer for stress measurements in silicon 用于硅应力测量的紧凑的八端压电传感器
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731364
J. Ramírez, F. Fruett
{"title":"A compact eigth-terminal piezotransducer for stress measurements in silicon","authors":"J. Ramírez, F. Fruett","doi":"10.1109/SBMICRO.2016.7731364","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731364","url":null,"abstract":"Mechanical stress compromise the performance and structural integrity of Integrated Circuits (ICs). Stress-sensing devices are becoming important tools to detect and correct stress related problems, improving the performance and yield of ICs. This works introduces a new Eight Terminals Silicon Piezotransducer (8TSP) fabricated using a commercial CMOS process, designed to measure the stress state on the (100) silicon surface. Each sensor integrates a resistor rosette in a single octagonal plate, and the complete stress state can be estimated by the relation between the resistance change in different directions, since the change of resistivity in silicon can be related to mechanical stress by the piezoresistive effect. In order to characterize the device, a four-point-bending apparatus using a circular substrate was designed to have control of both magnitude and direction of the applied uniaxial stress. The device was attached to a disk and stress was applied in the main crystallographic directions to observe the piezoresistance characteristics and calibrate the sensor. We applied stress in some other directions and the stress behavior fit the predicted by the theory. Those results confirm that the 8TPS can be used to find the stress state over the surface of a silicon chip.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"192 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121922847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Novel self-catalyzed GaAs nanowires with electrical contacts 具有电触点的新型自催化砷化镓纳米线
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731335
M. R. Piton, E. Koivusalo, S. Suomalainen, T. Hakkarainen, M. Guina
{"title":"Novel self-catalyzed GaAs nanowires with electrical contacts","authors":"M. R. Piton, E. Koivusalo, S. Suomalainen, T. Hakkarainen, M. Guina","doi":"10.1109/SBMICRO.2016.7731335","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731335","url":null,"abstract":"Electrical contacting and transport measurements of single self-catalyzed GaAs nanowires grown by molecular beam epitaxy is presented. The nanowires are grown directly in silicon using a recently developed technique based on lithography-free Si/SiOx patterns fabricated by a self-assembled method, which allows synthesis of highly uniform nanowires with controllable size and density.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131202077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mg-doping of GaAs thin films grown by MBE MBE生长GaAs薄膜的mg掺杂
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731321
H. Limborço, M. Moreira, F. Matinaga, A. G. de Oliveira, J. C. González
{"title":"Mg-doping of GaAs thin films grown by MBE","authors":"H. Limborço, M. Moreira, F. Matinaga, A. G. de Oliveira, J. C. González","doi":"10.1109/SBMICRO.2016.7731321","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731321","url":null,"abstract":"The influence of the growth conditions in the incorporation of Mg dopant atoms during the growth of GaAs thin films using two different substrate orientations was investigated electrically by Hall effect measurements and by Photoluminescence spectroscopy. Mg-doped GaAs thin films were successfully grown by molecular beam epitaxy with free carrier concentration varying between ~1016 cm-3 to ~1019 cm-3. The wide doping range obtained is suitable to fabricate a great variety of optoelectronic devices. The analysis of the incorporation of Mg atoms for several growth temperatures established two values for the thermal desorption activation energy ED of Mg atoms in the GaAs surface, nominally ED111 = (1.94 ± 0.14) eV for the (111)B samples and ED100 = (1.11 ± 0.16) eV for the (100). Two very close bands were observed in the PL emission of the samples and identified as the electron-Mg acceptor level (e-A) transition, at approximately 1.49 eV, and the donor-to-Mg acceptor level (D-A) transition, at approximately 1.48 eV. At high doping levels a red shift of the e-A and D-A transitions was observed for the (111)B thin films, effect that are related to many-body interactions as the doping level increases.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"259 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115844155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Back enhanced (BE) SOI pMOSFET behavior at high temperatures 背增强(BE) SOI pMOSFET在高温下的行为
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731358
L. Yojo, J. A. Padovese, R. Rangel, J. Martino
{"title":"Back enhanced (BE) SOI pMOSFET behavior at high temperatures","authors":"L. Yojo, J. A. Padovese, R. Rangel, J. Martino","doi":"10.1109/SBMICRO.2016.7731358","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731358","url":null,"abstract":"This paper reports for the first time the behavior of the new BE SOI pMOSFET at high temperatures up to 125°C. In spite of the conduction mechanism takes place at the back interface in this device, it was obtained an increase of the threshold voltage (up to 1.5 mV/ °C) and a decrease of the transconductance (c-factor up to 1.3) with the temperature increase, which is stronger than the observed for the conventional FD SOI MOSFET. The zero-temperature coefficient (ZTC) was also observed. Furthermore, a simple model was applied to calculate the ZTC bias point, and the model presents a good agreement with experimental data. The body factor is almost negligible within this temperature and the subthreshold slope presents a strong degradation at high temperature.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"9 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123799274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Structural and microfluidic analysis of microneedle array for drug delivery 微针阵列给药结构及微流控分析
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731332
Jennifer García, I. Ríos, F. Fonthal
{"title":"Structural and microfluidic analysis of microneedle array for drug delivery","authors":"Jennifer García, I. Ríos, F. Fonthal","doi":"10.1109/SBMICRO.2016.7731332","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731332","url":null,"abstract":"This study presented a structural and microfluidic analysis of microneedles array based on out-of-plane for a transdermal drug delivery device. The Microelectromechanical Systems (MEMS) based on thermopneumatic actuators devices were utilized to make the fluid flow through the microneedles. Analysis and simulation of microneedle were performed using ANSYS Finite Element Analysis (FEA) as tool to determine the effect of axial and transverse loads generated during the insertion of the microneedle into the skin. The static analysis with the Computational Fluid Dynamic (CFD) tool was presented to investigate the pressure distribution of fluid through 38 microneedles array. We obtained the maximum length of microneedle that it fulfilled the function of skin penetration, allowing that the fluid reaches the desired destination and avoiding any possible pain during the insertion. Microneedle simulation results were conclusive, indicating that the stresses due to the applied loads were under the yield strength of both Nickel and Silicon Carbide materials.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"67 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120940692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Responsivity improvement for short wavelenghts using full-gated PIN lateral SiGe diode 利用全门控PIN侧SiGe二极管改进短波长的响应性
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731366
C. Novo, R. Buhler, R. Zapata, R. Giacomini
{"title":"Responsivity improvement for short wavelenghts using full-gated PIN lateral SiGe diode","authors":"C. Novo, R. Buhler, R. Zapata, R. Giacomini","doi":"10.1109/SBMICRO.2016.7731366","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731366","url":null,"abstract":"Lateral PIN diodes can be used as photo-detectors in a wide wavelength range, including blue and UV radiation. Unlike vertical devices, lateral diodes can have depletion regions very close to the device surface, where the absorption of low-wavelengths radiation takes place. Due to this proximity to the surface, a MOS gate can control the charge density inside this region, allowing responsivity control. This work reports experimental results of gated PIN photodetectors designed and fabricated in a SiGe CMOS process. It was shown that, when the photodiode is illuminated with short wavelength radiation, the gate bias becomes very effective in terms of responsivity control, with up to 163% raise at UV. Indeed, based on the penetration-depth-dependent absorption of different wavelegths, our device has shown good color selective responsivity.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121144509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Automated analysis of propagation induced pulse broadening of single event transients 单事件瞬态传播诱导脉冲展宽的自动分析
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731337
G. Wirth, Michele G. Vieira
{"title":"Automated analysis of propagation induced pulse broadening of single event transients","authors":"G. Wirth, Michele G. Vieira","doi":"10.1109/SBMICRO.2016.7731337","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731337","url":null,"abstract":"The propagation of single event transients (SET) is modeled and simulated, considering the significant modifications of the transient pulse width observed in the literature. We show how to evaluate the impact of Bias Temperature Instability (BTI) on the propagation of SETs in logic circuits with an accurate SPICE simulator developed at our lab, and compare the simulation results to relevant experimental data from the literature. There has been a growing interest in applying automated techniques to analyze the propagation induced pulse broadening (PIPB) effects in modern digital circuits. Simulators available to the circuit designer do not predict the possibility that a SET pulse may suffer PIPB. We present an electrical simulator capable of analyzing the PIPB effect.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126585676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Beyond power: III-N devices for low-power systems, millimeter-wave applications, and more 超越功率:用于低功率系统，毫米波应用等的III-N器件
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731316
P. Fay, W. Li, L. Cao, Y. Zhao
{"title":"Beyond power: III-N devices for low-power systems, millimeter-wave applications, and more","authors":"P. Fay, W. Li, L. Cao, Y. Zhao","doi":"10.1109/SBMICRO.2016.7731316","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731316","url":null,"abstract":"Devices based on GaN and related III-N materials are increasingly well established in RF power applications, and are under active research and development for power conversion and control applications. However, the unique material properties of the III-Ns make them a promising basis for applications well beyond these traditional applications. Novel device concepts that harness these material properties in conjunction with unconventional operational physics are being explored to serve needs in applications as diverse as millimeter-wave and THz electronics and sensing, low-power systems, and ultra-scaled low-power logic. Devices exploiting interband tunneling in III-N heterostructures for low-power logic, as well as impact ionization and plasma-wave propagation in GaN 2DEGs for millimeter-wave and THz sensing and electronics are under active investigation to provide new levels of performance.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"4 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132850570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vibrational and electronic properties of the proton transfer fluorophore 2-(5'-amino-2'-hydroxyphenyl)benzothiazole 质子转移荧光团2-(5′-氨基-2′-羟基苯基)苯并噻唑的振动和电子性质
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731317
N. O. Lunardi, L. P. Etcheverry, F. Rodembusch, E. C. Moreira
{"title":"Vibrational and electronic properties of the proton transfer fluorophore 2-(5'-amino-2'-hydroxyphenyl)benzothiazole","authors":"N. O. Lunardi, L. P. Etcheverry, F. Rodembusch, E. C. Moreira","doi":"10.1109/SBMICRO.2016.7731317","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731317","url":null,"abstract":"This paper presents the theoretical and experimental study regarding the optical and structural properties of 2-(5'-amino-2'-hydroxyphenyl)benzothiazole. In order to investigate the potential application of this dye in organic light-emitting diodes, a photophysical characterization in film, solution and solid state was performed. Aditionally, Raman and infrared spectroscopies were also applied. The experimental results were compared with theoretical calculations achieved by Gaussian09 software.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124762028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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