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2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)最新文献

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Electrolyte-insulator-semiconductor structure (EIS) with TiO2 thin film for Pb+ detecting 电解质-绝缘体-半导体结构(EIS)与TiO2薄膜用于Pb+检测
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731328
R. Cesar, A. D. Barros, I. Doi, J. A. Diniz, J. Swart
{"title":"Electrolyte-insulator-semiconductor structure (EIS) with TiO2 thin film for Pb+ detecting","authors":"R. Cesar, A. D. Barros, I. Doi, J. A. Diniz, J. Swart","doi":"10.1109/SBMICRO.2016.7731328","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731328","url":null,"abstract":"In this work Electrolyte-Insulator-Semiconductor (EIS) device has been developed for pH and lead (Pb+) measurements. As dielectric material and sensitive membrane was chosen titanium dioxide (TiO2) thin film. This film was obtained by sputtering, and was structurally characterized by Atomic Force Microscopy, Raman and Ellipsometry which revealed that the films present rutile and anatase crystal structure and 1.17 RMS roughness. MOS capacitors were fabricated to make the electrical characterization of TiO2 thin films and to determine the annealing time that leads to the best thin film properties, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V. For electrical measurement of EIS was used Capacitance x Voltage curve (CxV curve) using different pH and lead (Pb+) solutions. From the flat band voltage (VFB) of the CxV curves was possible to determine the sensitivity of 96mV/pH for pH measurements and sensitivity of 30mV/ppm for different lead concentration in solution measurements.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128719307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Detecting milk components using intraband infrared photodetectors 利用带内红外光电探测器检测牛奶成分
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731347
D. Szwarcman, M. Pires, P. Souza
{"title":"Detecting milk components using intraband infrared photodetectors","authors":"D. Szwarcman, M. Pires, P. Souza","doi":"10.1109/SBMICRO.2016.7731347","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731347","url":null,"abstract":"Quality evaluation is important for improving milk productivity, as it helps to identify factors that hinder production. The protein content in milk is one of the main parameters to determine the milk quality. In this report, we show that using appropriate quantum dot infrared photodetectors it is possible to detect protein in the milk, as a first step to quantification.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129757723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of an analog and mixed-signal read-out circuit for long-wavelength infrared focal-plane arrays 长波长红外焦平面阵列模拟和混合信号读出电路的研制
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731352
M. Claro, A. Quivy
{"title":"Development of an analog and mixed-signal read-out circuit for long-wavelength infrared focal-plane arrays","authors":"M. Claro, A. Quivy","doi":"10.1109/SBMICRO.2016.7731352","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731352","url":null,"abstract":"We designed, fabricated and tested two prototypes of read-out circuit arquitectures using a 0.18um standard CMOS technology aiming the fabrication of focal-plane arrays (FPAs) for applications to infrared imaging. One small capacitive transimpedance amplifier (CTIA) was designed for high-resolution analog FPAs, as well as a novel mixed-signal architecture which has several advantages over the analog design, such as a wider dynamic range, a native digital output, a longer integration time and a faster system development. The read-out circuits were electrically tested at room temperature and liquid-nitrogen temperature (77 K) and, later, were connected to a photovoltaic quantum-well infrared photodetector cooled at 10K to check the properties of the whole system. The CTIA performed as expected. The mixed-signal circuit appeared to be able to measure currents from pA to nA with a good linearity and low noise. The calculated resolution was about 50,000 e-/bit, and integration times from milliseconds to a few seconds could be reached without any saturation. The results confirm that such circuits can be used for the design of state-of-the-art intersubband FPAs with very few modifications.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130598282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic transport in p-type doped GaAs nanowires p型掺杂砷化镓纳米线中的电子输运
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-06-01 DOI: 10.1002/pssb.201600204
N. Cifuentes, H. Limborço, M. Moreira, G. M. Ribeiro, A. G. de Oliveira, M. D. da Silva, J. C. González, Daniel Bretas Roa, E. R. Viana, A. Abelenda
{"title":"Electronic transport in p-type doped GaAs nanowires","authors":"N. Cifuentes, H. Limborço, M. Moreira, G. M. Ribeiro, A. G. de Oliveira, M. D. da Silva, J. C. González, Daniel Bretas Roa, E. R. Viana, A. Abelenda","doi":"10.1002/pssb.201600204","DOIUrl":"https://doi.org/10.1002/pssb.201600204","url":null,"abstract":"It is shown that Mg can be used as a p-type nontoxic and noncarcinogenic alternative dopant in GaAs nanowires. The analysis of the temperature dependence of the electrical properties of individual nanowires shows that the electronic transport changes from conduction of free holes, above room temperature, to hopping conduction at lower temperatures. Two hopping conduction mechanisms were observed starting from Mott-VRH and transiting to ES-VRH as temperature drops. The analysis of the hopping conduction allows extracting the values of electrical transport parameters in the NWs. The average doping levels were found to change from nanowire to nanowire. This anomaly was explained in terms of variations of growth rate from wire to wire due to the characteristic growth mechanism of free-standing nanowires, as well as due to the polytypism in the NWs.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117006849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET 间隔材料对叠置和自对准UTBB SOI nMOSFET的影响
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 1900-01-01 DOI: 10.1109/SBMICRO.2016.7731330
F. F. Teixeira, P. Agopian, J. Martino
{"title":"Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET","authors":"F. F. Teixeira, P. Agopian, J. Martino","doi":"10.1109/SBMICRO.2016.7731330","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731330","url":null,"abstract":"In this paper the influence of spacer material (S13N4, S1O2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical simulations. It is observed that the short length underlap devices are more influenced by spacer material. On the other hand, self-aligned does not present much spacer material dependence for the studied dimensions.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"23 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122750232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures 高温下不同排水工程下UTBB SOI增强动态阈值运行的DIBL
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 1900-01-01 DOI: 10.1109/SBMICRO.2016.7731329
K. Sasaki, E. Simoen, C. Claeys, J. Martino
{"title":"DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures","authors":"K. Sasaki, E. Simoen, C. Claeys, J. Martino","doi":"10.1109/SBMICRO.2016.7731329","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731329","url":null,"abstract":"Focusing on the DIBL (Drain Induced Barrier Lowering), this paper investigates for the first time the influence of the overlap/underlap gate to drain engineering on UTBB SOI devices in conventional and enhanced dynamic threshold voltage operation at high temperatures. Although the temperature degrades this parameter, the best DIBL performance was obtained for the enhanced mode operation and longer underlap length.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117085118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of proton radiation and strain on nFinFET zero temperature coefficient 质子辐射和应变对nFinFET零温度系数的影响
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 1900-01-01 DOI: 10.1109/SBMICRO.2016.7731362
V. M. Nascimento, P. Agopian, L. Almeida, C. Bordallo, E. Simoen, C. Claeys, J. Martino
{"title":"Influence of proton radiation and strain on nFinFET zero temperature coefficient","authors":"V. M. Nascimento, P. Agopian, L. Almeida, C. Bordallo, E. Simoen, C. Claeys, J. Martino","doi":"10.1109/SBMICRO.2016.7731362","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731362","url":null,"abstract":"This paper presents for the first time the study of proton radiation and strain influence on the Zero Temperature Coefficient (ZTC) in SOI nFinFETs based on experimental data and simple analytical model. The strain improves the mobility and consequently the transconductance (gm) and reduces the threshold voltage (VTH) due to the bandgap reduction. Proton radiation degrades gm and decreases VTH mainly for wider fins. We observed experimentally that both parameters (gm and VTH) influence the ZTC bias point, which is also supported by the ZTC analytical model. The VTH influences directly the VZTC in amplitude and the radiation the gm temperature degradation factor (c), consequently leading to undesired changes of VZTC with temperature.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"186 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131894321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Random telegraph signal noise in advanced high performance and memory devices 随机电报信号噪声在先进的高性能和存储设备
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 1900-01-01 DOI: 10.1109/SBMICRO.2016.7731315
C. Claeys, M. G. C. de Andrade, Z. Chai, W. Fang, B. Govoreanu, B. Kaczer, W. Zhang, E. Simoen
{"title":"Random telegraph signal noise in advanced high performance and memory devices","authors":"C. Claeys, M. G. C. de Andrade, Z. Chai, W. Fang, B. Govoreanu, B. Kaczer, W. Zhang, E. Simoen","doi":"10.1109/SBMICRO.2016.7731315","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731315","url":null,"abstract":"Random Telegraph Signal noise has been extensively studied for more than 30 years and gained high interest in recent years due to its importance for scaled down technologies. This review will demonstrate the power of RTS for single defect characterization. Present understanding of the device physics and evolutions in RTS characterization are highlighted. Special attention is given to RTS in memory devices such as DRAMS, ReRAM, planar (2D) and vertical (3D) flash.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124236258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Analysis of carrier mobility in triple gate SOI nFinFET combining rotated substrate and strain 结合旋转衬底和应变的三栅SOI nFinFET载流子迁移率分析
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 1900-01-01 DOI: 10.1109/SBMICRO.2016.7731340
T. A. Ribeiro, E. Simoen, C. Claeys, J. Martino, M. Pavanello
{"title":"Analysis of carrier mobility in triple gate SOI nFinFET combining rotated substrate and strain","authors":"T. A. Ribeiro, E. Simoen, C. Claeys, J. Martino, M. Pavanello","doi":"10.1109/SBMICRO.2016.7731340","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731340","url":null,"abstract":"This paper studies the carrier mobility of triple gate SOI nFinFETs, fabricated on standard and rotated substrates, varying the fin width. The effective mobility results were extracted using the Split CV method, where FinFETs fabricated with rotated substrate show a higher maximum mobility than devices fabricated with a standard substrate. The effects of biaxial strain were also analyzed for the maximum mobility and it is shown that the strain increases the mobility for standard and rotated substrates. The mobility degradation was analyzed and compared for all devices. The results show that for standard devices the strain decreases the degradation of the mobility, whereas for the rotated devices strain results in an increase in this degradation for small fin width.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133376411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency 质子辐射对SOI FinFET晶体管效率和单位增益频率权衡的影响
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 1900-01-01 DOI: 10.1109/SBMICRO.2016.7731357
L. Caparroz, J. Martino, E. Simoen, C. Claeys, P. Agopian
{"title":"Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency","authors":"L. Caparroz, J. Martino, E. Simoen, C. Claeys, P. Agopian","doi":"10.1109/SBMICRO.2016.7731357","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731357","url":null,"abstract":"This paper studies the proton radiation influence on SOI FinFET analog parameters based on the device inversion coefficient (IC). The analysis focuses on some figures of merit in analog design like the transistor efficiency, the unity gain frequency and the intrinsic voltage gain. Although the proton radiation affects the device performance, it is possible to define an optimal analog condition by basing the analysis on the inversion coefficient, even considering the radiation impact. N-channel devices are affected in a different manner when compared to p-channel counterparts, which can be decisive depending on the application.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115627926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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