电解质-绝缘体-半导体结构(EIS)与TiO2薄膜用于Pb+检测

R. Cesar, A. D. Barros, I. Doi, J. A. Diniz, J. Swart
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引用次数: 2

摘要

在这项工作中,开发了用于pH和铅(Pb+)测量的电解质-绝缘体-半导体(EIS)装置。选用二氧化钛(TiO2)薄膜作为介质材料和敏感膜。通过原子力显微镜、拉曼光谱和椭偏仪对薄膜进行了结构表征,发现薄膜具有金红石型和锐钛矿型的晶体结构,RMS粗糙度为1.17。制备MOS电容器对TiO2薄膜进行电学表征,并确定获得最佳薄膜性能的退火时间,即高介电常数值(high-k)、低电荷密度(Q0/q)和-0.9V左右的平带电压(VFB)。采用不同pH值和铅(Pb+)溶液的电容x电压曲线(CxV曲线)对EIS进行电测量。从CxV曲线的平带电压(VFB)可以确定pH测量的灵敏度为96mV/pH,溶液中不同铅浓度测量的灵敏度为30mV/ppm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrolyte-insulator-semiconductor structure (EIS) with TiO2 thin film for Pb+ detecting
In this work Electrolyte-Insulator-Semiconductor (EIS) device has been developed for pH and lead (Pb+) measurements. As dielectric material and sensitive membrane was chosen titanium dioxide (TiO2) thin film. This film was obtained by sputtering, and was structurally characterized by Atomic Force Microscopy, Raman and Ellipsometry which revealed that the films present rutile and anatase crystal structure and 1.17 RMS roughness. MOS capacitors were fabricated to make the electrical characterization of TiO2 thin films and to determine the annealing time that leads to the best thin film properties, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V. For electrical measurement of EIS was used Capacitance x Voltage curve (CxV curve) using different pH and lead (Pb+) solutions. From the flat band voltage (VFB) of the CxV curves was possible to determine the sensitivity of 96mV/pH for pH measurements and sensitivity of 30mV/ppm for different lead concentration in solution measurements.
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