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Non-linearity analysis of triple gate SOI nanowires MOSFETS 三栅SOI纳米线mosfet的非线性分析
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731355
B. Cardoso Paz, Rodrigo Trevisoli Doria, M. Cassé, S. Barraud, G. Reimbold, M. Vinet, O. Faynot, M. Pavanello
{"title":"Non-linearity analysis of triple gate SOI nanowires MOSFETS","authors":"B. Cardoso Paz, Rodrigo Trevisoli Doria, M. Cassé, S. Barraud, G. Reimbold, M. Vinet, O. Faynot, M. Pavanello","doi":"10.1109/SBMICRO.2016.7731355","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731355","url":null,"abstract":"This work aims to explore the harmonic distortion of triple gate SOI nanowires MOSFETs, considering long channel devices operating in saturation regime as amplifiers. The Integral Function Method is used to extract the total, second and third order harmonic distortions, which are the main figures of merit analyzed in this work. Low field mobility, surface roughness scattering and series resistance are correlated to the distortion minima. Narrower devices have shown improved linearity.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123572924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A three-dimensional model for a graphene guided SH-SAW sensor using finite element method 用有限元法建立了石墨烯导向SH-SAW传感器的三维模型
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731363
I. Nikolaou, H. Hallil, O. Tamarin, C. Dejous, D. Rebière
{"title":"A three-dimensional model for a graphene guided SH-SAW sensor using finite element method","authors":"I. Nikolaou, H. Hallil, O. Tamarin, C. Dejous, D. Rebière","doi":"10.1109/SBMICRO.2016.7731363","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731363","url":null,"abstract":"This work presents several aspects regarding the three-dimensional modeling of a guided Shear Horizontal Surface Acoustic Wave (SH-SAW) sensor. A major problem that often arises in a simulation of the acoustic wave devices is the out-of-plane displacements of the widely used Euler angles. Our approach is based on the plane wave solution where the properties of the acoustic wave vary in three dimensions and therefore are distinguished by their propagation direction, such as transverse longitudinal, transverse horizontal and transverse vertical, respectively. In this study, a new approach is developed to accurately demonstrate a Love wave platform performed with a Finite Element Method (FEM) simulation using Comsol Multiphysics®. The plane wave solution, therefore, allows the visualization of the simulation results by using data treatment such as Fast Fourier Transform (FFT). The results show reasonable agreement between the simulated and the fabricated structure. Indeed, we present that the addition of the graphene oxide sensing layer enhances the acoustic wave propagation and reduces the acoustic wave reflections efficiently. Finally, the configurations of the 3D model are compared with theoretical and experimental frequency data and the results showed very good agreement.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122112614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Boosting the MOSFETs matching by using diamond layout style 采用菱形布局方式提高mosfet的匹配
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731334
V. V. Peruzzi, C. Renaux, D. Flandre, Salvador Pinillos Gimenez
{"title":"Boosting the MOSFETs matching by using diamond layout style","authors":"V. V. Peruzzi, C. Renaux, D. Flandre, Salvador Pinillos Gimenez","doi":"10.1109/SBMICRO.2016.7731334","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731334","url":null,"abstract":"This paper performs an experimental comparative study of the Metal-Oxide-Semiconductor Silicon-On-Insulator (SOI) Field Effect Transistors (MOSFETs) matching, which are implemented with the hexagonal gate geometry (Diamond) and classical rectangular one. Some of the main analog parameters of 360 devices are investigated. The results demonstrate that the Diamond SOI MOSFETs with α angles equal to 53.1° and 90° are capable of boosting in more than 20% the devices matching in comparison to those observed in the typical rectangular SOI MOSFETs, regarding the same gate area and bias conditions. Therefore, the Diamond layout style is an alternative technique to reduce the MOSFETs' mismatching regarding the analog SOI CMOS ICs applications.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127587196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Future of SiGe BiCMOS technologies with "more-than-moore" modules for mm-wave and THz applications SiGe BiCMOS技术的未来，为毫米波和太赫兹应用提供“超过摩尔”模块
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731312
M. Kaynak, A. Mai
{"title":"Future of SiGe BiCMOS technologies with \"more-than-moore\" modules for mm-wave and THz applications","authors":"M. Kaynak, A. Mai","doi":"10.1109/SBMICRO.2016.7731312","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731312","url":null,"abstract":"This paper presents the modular extension of a BiCMOS technology. Three different modules, namely RF-MEMS switch, through-silicon-via (TSV) and microfluidics, are added to IHP's BiCMOS technologies. The first extension module of RF-MEMS switch adds a high-performance mechanical switch, providing unique features such as low-loss switching at mm-wave frequencies. The TSV module, adds deep vias through the substrate (silicon), provides low-ohmic vias through the front side to back side of the silicon wafer. Using this module, the back side of the silicon chip can be used as the RF-ground. Furthermore, such vias through the substrate enables the 3D integrated packages. The last extension module, microfluidics, adds the micro-channels inside the BiCMOS chip. Such micro-channels are very promising for bio-sensing applications for THz detection. The brief technological information of each module and some design examples are also provided in this paper.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130722785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Innovation in higher education: Specificity of the microelectronics field 高等教育创新:微电子领域的特殊性
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731342
Olivier Bonnaud, Laurent Fesquet
{"title":"Innovation in higher education: Specificity of the microelectronics field","authors":"Olivier Bonnaud, Laurent Fesquet","doi":"10.1109/SBMICRO.2016.7731342","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731342","url":null,"abstract":"The expected development of connected objects appears as a key factor of the future worldwide economy. The field of microelectronics is primarily concerned by this evolution because the connected objects involve the microelectronics industry and related research. In addition, the spectrum of the application domains can be very wide and the multidisciplinary approach appears mandatory. In parallel, the evolution of the microelectronics towards a larger integration implies new designs, and new technologies that must be assimilated by the students. The main challenge, today, is to give to these students and future engineers, the methodology and the know-how that can insure an innovative approach, by changing the educational structures and the behavior of the professorial body, while in the same time, the education systems want to massively introduce numerical tools. As a result, the introduction of new practices and laboratory works becomes increasingly useful, more especially in microelectronics. Indeed, this is a way to give to the students the knowledge and the know-how with an innovative behavior. However, the practice on microelectronic platforms is very expensive and the sharing of this equipment between several institutions is necessary. The French national network, CNFM (National Coordination for Education in Microelectronics and nanotechnologies), which pilots the 12 national platforms, tries to answer to these needs and has set-up a policy deliberately focused on innovative practices on dedicated platforms. Several suggestions are given in order to improve the educational system and create a model which could be duplicated in many other countries.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132665101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Approaches to the design, fabrication, and test of electroacoustic micro-transducers 电声微换能器的设计、制造和测试方法
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731314
L. Rufer
{"title":"Approaches to the design, fabrication, and test of electroacoustic micro-transducers","authors":"L. Rufer","doi":"10.1109/SBMICRO.2016.7731314","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731314","url":null,"abstract":"Silicon-based microphones are nowadays well-established MEMS components produced by strong industrial actors. The fabrication of such acoustic sensors is based on a dedicated technology fulfilling all designed parameters. On the other hand, the development of such a technology processes is costly and time-consuming. In this paper, we will present approaches based on technologies readily available to small companies and academic institutions. We will show, on several examples, a design process of acoustic micro-transducers fabricated through generic technologies. Focused will be a CMOS-MEMS process applied to the realization of suspended diaphragms that can be part of transducers with piezoresistive, electrostatic, or electrodynamic transduction. We will also briefly present a testing technique that can be used for acoustic sensors calibration. This technique has a special interest for sensors with a frequency response exceeding the typical audible range.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133733322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A methodology to identify critical interconnects affected by electromigration 确定受电迁移影响的关键互连的方法
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731325
R. O. Nunes, R. L. de Orio
{"title":"A methodology to identify critical interconnects affected by electromigration","authors":"R. O. Nunes, R. L. de Orio","doi":"10.1109/SBMICRO.2016.7731325","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731325","url":null,"abstract":"Electromigration damage in interconnects is a well-known bottleneck of integrated circuits, as it is responsible for performance degradation, affecting parameters like delay, power and frequency. To guarantee a better performance for longer time, the chip designer needs to identify critical wires in the circuit layout and to alter it using techniques that retard the electromigration impact on the circuit. In this work, it is proposed a methodology to identify the critical lines due to the electromigration effect. This methodology is applied to evaluate the performance degradation of a ring oscillator.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115477096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Simulation and fabrication of silicon nitride microring resonator by DUV lithography 氮化硅微环谐振腔的DUV光刻模拟与制作
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731346
G. Cirino, L. Barea, A. V. Von Zuben, Herve L'hermite, B. Bêche, O. de Sagazan, N. Frateschi, T. M-Brahim
{"title":"Simulation and fabrication of silicon nitride microring resonator by DUV lithography","authors":"G. Cirino, L. Barea, A. V. Von Zuben, Herve L'hermite, B. Bêche, O. de Sagazan, N. Frateschi, T. M-Brahim","doi":"10.1109/SBMICRO.2016.7731346","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731346","url":null,"abstract":"This work reports the design and fabrication of silicon nitride-based microresonators by employing DUV optical lithography and ICP-RIE plasma etching. Microring devices with high Q factors provide high sensitivity and low detection limit, enabling their use in biochemical sensing applications. With these properties, the devices can be used to detect and quantify the biomolecules present in a homogeneous solution, by detecting an effective refractive index change, without using fluorescent labels.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126492902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of gold nanoparticles on Eu3+ doped GeO2-Bi2O3 glasses covered Silicon solar cell 金纳米颗粒对Eu3+掺杂GeO2-Bi2O3玻璃覆盖硅太阳能电池的影响
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731320
J. A. García, L. Kassab, R. Onmori, Bismarck C. Lima, L. A. Gómez-Malagón, A. Gomes
{"title":"Influence of gold nanoparticles on Eu3+ doped GeO2-Bi2O3 glasses covered Silicon solar cell","authors":"J. A. García, L. Kassab, R. Onmori, Bismarck C. Lima, L. A. Gómez-Malagón, A. Gomes","doi":"10.1109/SBMICRO.2016.7731320","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731320","url":null,"abstract":"Efficiency of Silicon commercial solar cells covered with germanate glasses doped with Eu3+ ions, with and without gold nanoparticles, was measured. Enhancement of the efficiency was observed in the presence of gold nanoparticles when compared to germanate glasses without gold nanoparticle. The results were attributed to the plasmonic enhancement around Eu3+ ions due to the presence of gold nanoparticles and the energy transfer from excited nanoparticles to the Eu3+ ions.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122496506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Layout and fabrication of long legs microbolometer 长腿微辐射热计的设计与制作
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI: 10.1109/SBMICRO.2016.7731367
Marcelo S. B. Castro, Marcio Scarpim de Souza
{"title":"Layout and fabrication of long legs microbolometer","authors":"Marcelo S. B. Castro, Marcio Scarpim de Souza","doi":"10.1109/SBMICRO.2016.7731367","DOIUrl":"https://doi.org/10.1109/SBMICRO.2016.7731367","url":null,"abstract":"Microbolometers are uncooled infrared detectors that enable the perception of electromagnetic radiation in a wavelength interval from 8 μm to 12 μm. They have a broad range of applications in medicine, industry, public safety, and especially in the military and aerospace fields. The microbolometer consists of an IR-sensitive element deposited on top of a microbridge and suspended above the substrate by support legs. The design and dimensions of microbridge and its support legs affect the performance of the detector. The greater the length of support legs the larger the thermal insulation and the higher the radiation sensitivity of microbolometers. In this work, five different microbolometer pixel layouts were designed, simulated and fabricated. The results demonstrate the feasibility of manufacturing longer support legs for uncooled infrared detectors.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134089240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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