Future of SiGe BiCMOS technologies with "more-than-moore" modules for mm-wave and THz applications

Abstract

This paper presents the modular extension of a BiCMOS technology. Three different modules, namely RF-MEMS switch, through-silicon-via (TSV) and microfluidics, are added to IHP's BiCMOS technologies. The first extension module of RF-MEMS switch adds a high-performance mechanical switch, providing unique features such as low-loss switching at mm-wave frequencies. The TSV module, adds deep vias through the substrate (silicon), provides low-ohmic vias through the front side to back side of the silicon wafer. Using this module, the back side of the silicon chip can be used as the RF-ground. Furthermore, such vias through the substrate enables the 3D integrated packages. The last extension module, microfluidics, adds the micro-channels inside the BiCMOS chip. Such micro-channels are very promising for bio-sensing applications for THz detection. The brief technological information of each module and some design examples are also provided in this paper.