间隔材料对叠置和自对准UTBB SOI nMOSFET的影响

2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 1900-01-01 DOI:10.1109/SBMICRO.2016.7731330

F. F. Teixeira, P. Agopian, J. Martino

{"title":"间隔材料对叠置和自对准UTBB SOI nMOSFET的影响","authors":"F. F. Teixeira, P. Agopian, J. Martino","doi":"10.1109/SBMICRO.2016.7731330","DOIUrl":null,"url":null,"abstract":"In this paper the influence of spacer material (S13N4, S1O2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical simulations. It is observed that the short length underlap devices are more influenced by spacer material. On the other hand, self-aligned does not present much spacer material dependence for the studied dimensions.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"23 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET\",\"authors\":\"F. F. Teixeira, P. Agopian, J. Martino\",\"doi\":\"10.1109/SBMICRO.2016.7731330\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the influence of spacer material (S13N4, S1O2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical simulations. It is observed that the short length underlap devices are more influenced by spacer material. On the other hand, self-aligned does not present much spacer material dependence for the studied dimensions.\",\"PeriodicalId\":113603,\"journal\":{\"name\":\"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"23 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMICRO.2016.7731330\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMICRO.2016.7731330","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文采用二维数值模拟的方法研究了衬垫材料(S13N4、S1O2或真空)对超薄体和埋藏氧化物(UTBB) SOI nMOSFET的影响。结果表明，短长度搭接装置受间隔材料的影响较大。另一方面，自对准对所研究的尺寸没有太多的间隔材料依赖。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET

In this paper the influence of spacer material (S13N4, S1O2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical simulations. It is observed that the short length underlap devices are more influenced by spacer material. On the other hand, self-aligned does not present much spacer material dependence for the studied dimensions.

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2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)

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