高温下不同排水工程下UTBB SOI增强动态阈值运行的DIBL

2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 1900-01-01 DOI:10.1109/SBMICRO.2016.7731329

K. Sasaki, E. Simoen, C. Claeys, J. Martino

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引用次数: 0

摘要

本文以DIBL (Drain Induced垒降)为研究对象，首次研究了重叠/下迭栅极漏极工程对UTBB SOI器件在常规和增强动态阈值电压下高温工作的影响。虽然温度降低了该参数，但在增强模式下工作和更长的覆盖长度下，获得了最佳的DIBL性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures

Focusing on the DIBL (Drain Induced Barrier Lowering), this paper investigates for the first time the influence of the overlap/underlap gate to drain engineering on UTBB SOI devices in conventional and enhanced dynamic threshold voltage operation at high temperatures. Although the temperature degrades this parameter, the best DIBL performance was obtained for the enhanced mode operation and longer underlap length.

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2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)

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