C. A. Pons-Flores, I. Hernández, M. Estrada, I. Garduño, A. Cerdeira, J. Tinoco, I. Mejia, R. Picos
{"title":"采用HfO2作为栅极介质，采用射频溅射沉积两层的铪-铟-锌氧化物薄膜晶体管","authors":"C. A. Pons-Flores, I. Hernández, M. Estrada, I. Garduño, A. Cerdeira, J. Tinoco, I. Mejia, R. Picos","doi":"10.1109/SBMICRO.2016.7731318","DOIUrl":null,"url":null,"abstract":"The electrical performance of RF magnetron sputtered Hafnium-Indium-Zinc-Oxide-based thin film transistors (HIZO TFTs) is compared using two different gate dielectrics: a) RF sputtered HfO<sub>2</sub> and b) thermally grown SiO<sub>2</sub>. For HfO<sub>2</sub> devices, output characteristics showed higher drain-currents capabilities with a reduction of the TFT operation voltage range from 0-15 V, when using SiO<sub>2</sub>, to 0-8 V. The HfO<sub>2</sub> dielectric constant was around 15, measured at 1 kHz. Vt was less than 2 V for HfO<sub>2</sub> devices and around 5 V for SiO<sub>2</sub> devices.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Hafnium-Indium-Zinc oxide thin film transistors using HfO2 as gate dielectric, with both layers deposited by RF sputtering\",\"authors\":\"C. A. Pons-Flores, I. Hernández, M. Estrada, I. Garduño, A. Cerdeira, J. Tinoco, I. Mejia, R. Picos\",\"doi\":\"10.1109/SBMICRO.2016.7731318\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical performance of RF magnetron sputtered Hafnium-Indium-Zinc-Oxide-based thin film transistors (HIZO TFTs) is compared using two different gate dielectrics: a) RF sputtered HfO<sub>2</sub> and b) thermally grown SiO<sub>2</sub>. For HfO<sub>2</sub> devices, output characteristics showed higher drain-currents capabilities with a reduction of the TFT operation voltage range from 0-15 V, when using SiO<sub>2</sub>, to 0-8 V. The HfO<sub>2</sub> dielectric constant was around 15, measured at 1 kHz. Vt was less than 2 V for HfO<sub>2</sub> devices and around 5 V for SiO<sub>2</sub> devices.\",\"PeriodicalId\":113603,\"journal\":{\"name\":\"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMICRO.2016.7731318\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMICRO.2016.7731318","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hafnium-Indium-Zinc oxide thin film transistors using HfO2 as gate dielectric, with both layers deposited by RF sputtering
The electrical performance of RF magnetron sputtered Hafnium-Indium-Zinc-Oxide-based thin film transistors (HIZO TFTs) is compared using two different gate dielectrics: a) RF sputtered HfO2 and b) thermally grown SiO2. For HfO2 devices, output characteristics showed higher drain-currents capabilities with a reduction of the TFT operation voltage range from 0-15 V, when using SiO2, to 0-8 V. The HfO2 dielectric constant was around 15, measured at 1 kHz. Vt was less than 2 V for HfO2 devices and around 5 V for SiO2 devices.
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