M. R. Piton, E. Koivusalo, S. Suomalainen, T. Hakkarainen, M. Guina
{"title":"具有电触点的新型自催化砷化镓纳米线","authors":"M. R. Piton, E. Koivusalo, S. Suomalainen, T. Hakkarainen, M. Guina","doi":"10.1109/SBMICRO.2016.7731335","DOIUrl":null,"url":null,"abstract":"Electrical contacting and transport measurements of single self-catalyzed GaAs nanowires grown by molecular beam epitaxy is presented. The nanowires are grown directly in silicon using a recently developed technique based on lithography-free Si/SiOx patterns fabricated by a self-assembled method, which allows synthesis of highly uniform nanowires with controllable size and density.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel self-catalyzed GaAs nanowires with electrical contacts\",\"authors\":\"M. R. Piton, E. Koivusalo, S. Suomalainen, T. Hakkarainen, M. Guina\",\"doi\":\"10.1109/SBMICRO.2016.7731335\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electrical contacting and transport measurements of single self-catalyzed GaAs nanowires grown by molecular beam epitaxy is presented. The nanowires are grown directly in silicon using a recently developed technique based on lithography-free Si/SiOx patterns fabricated by a self-assembled method, which allows synthesis of highly uniform nanowires with controllable size and density.\",\"PeriodicalId\":113603,\"journal\":{\"name\":\"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMICRO.2016.7731335\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMICRO.2016.7731335","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel self-catalyzed GaAs nanowires with electrical contacts
Electrical contacting and transport measurements of single self-catalyzed GaAs nanowires grown by molecular beam epitaxy is presented. The nanowires are grown directly in silicon using a recently developed technique based on lithography-free Si/SiOx patterns fabricated by a self-assembled method, which allows synthesis of highly uniform nanowires with controllable size and density.
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