FinFET prototypes fabricated by aluminium hard mask FIB milling for fin definition and SiON/TiN/Al gate stack

Abstract

FinFET prototypes have been fabricated using an aluminium hard mask FIB milling technique for fin definition and SiON/TiN/Al gate stack. A three dimensional fin with sub-100nm dimensions was obtained. Electrical characterisation results are presented and discussed. Maximum transconductance in the linear region of 500nS, leakage current of 10pA and subthreshold slope of 120mV/dec have been obtained at zero bulk bias, showing improvements on previous reported results for devices fabricated using the focused ion beam. Process modifications are suggested to obtain further improvements in electrical response.