通过铝硬掩膜FIB铣削加工fin定义和SiON/TiN/Al栅极堆栈制备FinFET原型

2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI:10.1109/SBMICRO.2016.7731324

A. Leonhardt, L. Petersen Barbosa Lima, Frederico Hummel Cioldin, M. V. Puydinger dos Santos, J. A. Diniz, L. Manera

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引用次数: 0

摘要

FinFET原型采用铝硬掩膜FIB铣削技术进行翅片定义和SiON/TiN/Al栅极堆叠。得到了尺寸小于100nm的三维翅片。给出并讨论了电特性的结果。在零体偏置情况下，线性区域的最大跨导为500nS，泄漏电流为10pA，亚阈值斜率为120mV/dec，与先前报道的使用聚焦离子束制造的器件的结果相比有所改进。建议对工艺进行修改，以进一步改善电响应。

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FinFET prototypes fabricated by aluminium hard mask FIB milling for fin definition and SiON/TiN/Al gate stack

FinFET prototypes have been fabricated using an aluminium hard mask FIB milling technique for fin definition and SiON/TiN/Al gate stack. A three dimensional fin with sub-100nm dimensions was obtained. Electrical characterisation results are presented and discussed. Maximum transconductance in the linear region of 500nS, leakage current of 10pA and subthreshold slope of 120mV/dec have been obtained at zero bulk bias, showing improvements on previous reported results for devices fabricated using the focused ion beam. Process modifications are suggested to obtain further improvements in electrical response.

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2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)

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