非对称自级联码FD SOI nmosfet中的低频噪声

2016 31st Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2016-08-01 DOI:10.1109/SBMICRO.2016.7731354

R. Assalti, R. Doria, M. Pavanello, M. de Souza, D. Flandre

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引用次数: 1

摘要

本文通过实验研究了线性偏置的非对称自级联码全耗尽SOI nmosfet中栅极电压和沟道掺杂浓度变化对低频噪声的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low-frequency noise in asymmetric self-cascode FD SOI nMOSFETs

This paper investigates the origin of low-frequency noise in Asymmetric Self-Cascode Fully Depleted SOI nMOSFETs biased in linear regime with regards to the variation of gate voltage and the channel doping concentration through experimental results.

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来源期刊

2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)

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