R. Trevisoli, R. Doria, M. de Souza, S. Barraud, M. Vinet, M. Pavanello
{"title":"一种新的无结纳米线晶体管串联电阻提取方法","authors":"R. Trevisoli, R. Doria, M. de Souza, S. Barraud, M. Vinet, M. Pavanello","doi":"10.1109/SBMICRO.2016.7731338","DOIUrl":null,"url":null,"abstract":"Series resistance can severely affect the electrical behavior of such Junctionless Nanowire Transistors. The aim of this work is to propose a new method for the extraction of the series resistance in Junctionless Nanowire Transistors. The method is validated by means of tridimensional numerical simulations and experimental results, using transistors with different widths and doping concentrations.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"267 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A new series resistance extraction method for junctionless nanowire transistors\",\"authors\":\"R. Trevisoli, R. Doria, M. de Souza, S. Barraud, M. Vinet, M. Pavanello\",\"doi\":\"10.1109/SBMICRO.2016.7731338\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Series resistance can severely affect the electrical behavior of such Junctionless Nanowire Transistors. The aim of this work is to propose a new method for the extraction of the series resistance in Junctionless Nanowire Transistors. The method is validated by means of tridimensional numerical simulations and experimental results, using transistors with different widths and doping concentrations.\",\"PeriodicalId\":113603,\"journal\":{\"name\":\"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"267 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMICRO.2016.7731338\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMICRO.2016.7731338","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new series resistance extraction method for junctionless nanowire transistors
Series resistance can severely affect the electrical behavior of such Junctionless Nanowire Transistors. The aim of this work is to propose a new method for the extraction of the series resistance in Junctionless Nanowire Transistors. The method is validated by means of tridimensional numerical simulations and experimental results, using transistors with different widths and doping concentrations.