Analysis of heavy-ion particles striking regions inside and between PIN photodetectors

Abstract

This paper analyses lateral PIN diodes fabricated in the IBM 0.13 technology, intended to be used in a photodetector pixel structure in future developments. Experimental electrical characterization is used to adjust numerical simulation's models that are used to evaluate the radiation analysis in PIN diodes in dark condition for heavy-ion radiation effects. Particle beam radiation, present in hazard environments, may cause circuit malfunctions due to interference in the device response. These variables impact the PIN diode performance, which are important devices to sensor applications, including those in space and nuclear facilities environments. The results pointed out the magnitude of the peak in the cathode current of a diode while the chip is struck by a particle inside the device's area, as well as in the device's neighborhood.