{"title":"电迁移诱导空洞生长的扩散界面建模","authors":"L. M. Queiroz, R. L. de Orio","doi":"10.1109/SBMICRO.2016.7731341","DOIUrl":null,"url":null,"abstract":"Modeling and simulation of the temporal evolution of electromigration voids are critical to evaluate the reliability of interconnects of modern integrated circuits. In this work, the diffuse interface model is applied to investigate two different mechanisms of the void evolution due to electromigration. Two-dimensional numerical simulations have been performed and interconnect resistance increase has been monitored. The results recovered the main features of the electromigration induced failure observed in experiments.","PeriodicalId":113603,"journal":{"name":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Diffuse interface modeling for electromigration induced void growth\",\"authors\":\"L. M. Queiroz, R. L. de Orio\",\"doi\":\"10.1109/SBMICRO.2016.7731341\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Modeling and simulation of the temporal evolution of electromigration voids are critical to evaluate the reliability of interconnects of modern integrated circuits. In this work, the diffuse interface model is applied to investigate two different mechanisms of the void evolution due to electromigration. Two-dimensional numerical simulations have been performed and interconnect resistance increase has been monitored. The results recovered the main features of the electromigration induced failure observed in experiments.\",\"PeriodicalId\":113603,\"journal\":{\"name\":\"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMICRO.2016.7731341\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMICRO.2016.7731341","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Diffuse interface modeling for electromigration induced void growth
Modeling and simulation of the temporal evolution of electromigration voids are critical to evaluate the reliability of interconnects of modern integrated circuits. In this work, the diffuse interface model is applied to investigate two different mechanisms of the void evolution due to electromigration. Two-dimensional numerical simulations have been performed and interconnect resistance increase has been monitored. The results recovered the main features of the electromigration induced failure observed in experiments.
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