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2007 Spanish Conference on Electron Devices最新文献

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Analysis of the impact of intrinsic parameter fluctuations in a 50 nm InP HEMT 50 nm InP HEMT内征参数波动影响分析
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384001
N. Seoane, A. García-Loureiro, K. Kalna, Asen Asenov
{"title":"Analysis of the impact of intrinsic parameter fluctuations in a 50 nm InP HEMT","authors":"N. Seoane, A. García-Loureiro, K. Kalna, Asen Asenov","doi":"10.1109/SCED.2007.384001","DOIUrl":"https://doi.org/10.1109/SCED.2007.384001","url":null,"abstract":"Intrinsic parameter fluctuations associated with the discreteness of charge and matter become an important factor when the semiconductor devices are scaled to nanometre dimensions. These effects have a considerable effect on the overall device performance. In this work, we have employed a 3D parallel drift-diffusion device simulator to study the impact of intrinsic parameter fluctuations in a 50 nm gate length InP HEMT with an In0.7Ga0.3As channel. After careful calibration of the I-V characteristics obtained from the device simulator against experimental data we carry out a statistical study considering the fluctuations in the delta-doping layer and interface charges as well as Indium content variation in the channel. We have found that the presence of random discrete dopants in the delta-doping layer are the major factor introducing the variations in the drive current.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116210296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A CAD model of Nanoscale Double-Gate MOSFET for RF and Noise applications including quantum and non-stationary effects 用于射频和噪声应用的纳米级双栅MOSFET的CAD模型，包括量子和非平稳效应
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384066
A. Lázaro, B. Nae, O. Moldovan, B. Iñíguez
{"title":"A CAD model of Nanoscale Double-Gate MOSFET for RF and Noise applications including quantum and non-stationary effects","authors":"A. Lázaro, B. Nae, O. Moldovan, B. Iñíguez","doi":"10.1109/SCED.2007.384066","DOIUrl":"https://doi.org/10.1109/SCED.2007.384066","url":null,"abstract":"This paper presents a new approach for an analytical model of nanoscale double-gate (DG) MOSFET. The equivalent circuit is considered over a fully distributed active line, opening the door to obtain a compact and unified small equivalent circuit that includes noise contributions.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116235661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development and Optimization of Pre-Concentrator for Enhanced Benzene Detection 苯强化检测预富集器的研制与优化
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384030
F. Blanco, P. Ivanov, M. Vinaixa, X. Vilanova, I. Gràcia, C. Cané, X. Correig
{"title":"Development and Optimization of Pre-Concentrator for Enhanced Benzene Detection","authors":"F. Blanco, P. Ivanov, M. Vinaixa, X. Vilanova, I. Gràcia, C. Cané, X. Correig","doi":"10.1109/SCED.2007.384030","DOIUrl":"https://doi.org/10.1109/SCED.2007.384030","url":null,"abstract":"In this paper, we present a miniaturized benzene pre-concentrator. The device is based on an adsorbent layer (Carbopack X) placed on an alumina substrate. Concentration factors of up to 300 has been obtained allowing a significant improvement of the usual detection margins of a gas sensor.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122056315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of a palladium coated Bragg grating sensor to detect and measure low hydrogen concentrations 钯包覆布拉格光栅传感器对低氢浓度的检测与测量研究
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384032
M. Aleixandre, P. Corredera, M. Hernanz, I. Sayago, M. C. Horrillo, J. Gutierrez-Monreal
{"title":"Study of a palladium coated Bragg grating sensor to detect and measure low hydrogen concentrations","authors":"M. Aleixandre, P. Corredera, M. Hernanz, I. Sayago, M. C. Horrillo, J. Gutierrez-Monreal","doi":"10.1109/SCED.2007.384032","DOIUrl":"https://doi.org/10.1109/SCED.2007.384032","url":null,"abstract":"In this work we present a sensor based in a Bragg grating coated by a small amount of palladium. We explain the process of fabrication in detail, from the etching of the fiber to the deposition of the palladium. In this sensor the amount of hydrogen absorbed by the Pd is hydrogen concentration dependant and causes a stress that alters the transmission or reflection spectra of the FBG.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"30 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131539682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Noise study in photodiodes based on InGaN/GaN MQW 基于InGaN/GaN MQW的光电二极管噪声研究
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384058
A. Navarro, C. Rivera, R. Cuerdo, J. Pau, J. Pereiro, F. Calle, E. Muoz
{"title":"Noise study in photodiodes based on InGaN/GaN MQW","authors":"A. Navarro, C. Rivera, R. Cuerdo, J. Pau, J. Pereiro, F. Calle, E. Muoz","doi":"10.1109/SCED.2007.384058","DOIUrl":"https://doi.org/10.1109/SCED.2007.384058","url":null,"abstract":"The low frequency noise characteristics of InGaN/GaN multiple-quantum-well (MQW) P-I-N photodiodes have been studied. 1/f noise has been measured for two different In contents, under different reverse bias voltages and variable temperatures from 25 K to 623 K. Multilevel random telegraph signal (RTS) noise was found in several samples. The spectral response was measured in photovoltaic and biased mode. Specific detectivity was evaluated at various reverse voltages at temperatures up to 300degC. InGaN/GaN MQW photodiodes have been demonstrated to be a viable alternative for high temperature operation.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123684204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of Porous Alumina Porosity after Pore Widening Process 扩孔后多孔氧化铝孔隙率的研究
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383991
L. Vojkůvka, L. Marsal, J. Pallarès
{"title":"Study of Porous Alumina Porosity after Pore Widening Process","authors":"L. Vojkůvka, L. Marsal, J. Pallarès","doi":"10.1109/SCED.2007.383991","DOIUrl":"https://doi.org/10.1109/SCED.2007.383991","url":null,"abstract":"The porosity study of self-ordered porous alumina membranes (PAMs) after pore widening process is described. The PAMs were fabricated using aluminum foils oxidized in oxalic acid via a two step anodization process. The as-produced PAMs samples were subsequently etched in phosphoric acid solution to widen the pores. The morphology of several samples with modified pores was examined using scanning electron microscopy (SEM) and then the SEM images were analyzed in order to calculate the porosity of the PAMs. The porous alumina membranes with tunable geometrical properties can be applied in the fabrication of nanostructures.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117027398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Towards a Microsytem of Multiple Production of Micro-Drops Manufactured on Silicon 硅基微滴复合生产的微系统研究
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384034
F. Perdigones, A. Luque, A. Gañán-Calvo, J. Esteve, J. Monserrat, J. Quero
{"title":"Towards a Microsytem of Multiple Production of Micro-Drops Manufactured on Silicon","authors":"F. Perdigones, A. Luque, A. Gañán-Calvo, J. Esteve, J. Monserrat, J. Quero","doi":"10.1109/SCED.2007.384034","DOIUrl":"https://doi.org/10.1109/SCED.2007.384034","url":null,"abstract":"In this paper, the development of a microsystem of multiple production of micro-drops manufactured on silicon is reported. The technology used to generate the micro-drops is flow focusing. Therefore, the aim is the integration of flow focusing technology on silicon for mass production of microparticles, in this case, micro-drops. All the alternative fabrication processes on silicon, with their advantages and disadvantages not only about fabrication, but also flow focusing operation, are explained. The behaviors of the device obtained by simulations are displayed. The results of simulations show stable and unstable behaviors. The instabilities are due to fluidic interactions. From these simulation some solutions are proposed in order to solve the instability, and therefore, to improve the range of operation of the device.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121665330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of the Corner Effects on Pi-Gate SOI MOSFETs pi栅极SOI mosfet拐角效应的研究
2007 Spanish Conference on Electron Devices Pub Date : 2007-03-01 DOI: 10.1109/SCED.2007.383998
F. Ruiz, A. Godoy, F. Gámiz, L. Donetti, C. Sampedro
{"title":"Study of the Corner Effects on Pi-Gate SOI MOSFETs","authors":"F. Ruiz, A. Godoy, F. Gámiz, L. Donetti, C. Sampedro","doi":"10.1109/SCED.2007.383998","DOIUrl":"https://doi.org/10.1109/SCED.2007.383998","url":null,"abstract":"Multiple gate SOI MOSFETs can give rise to the formation of independent channels with different threshold voltages. This phenomenon is the so called corner effects. In this work, we have carried out a thorough study of the corner effects on a Pi-Gate SOI MOSFET. To get our goal, we have developed a numerical simulator that solves the 2D Schrodinger-Poisson equations self-consistently in the structure under study.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"40 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126122012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Nanoscale and device level reliability of high-k dielectrics based CMOS nanodevices 基于高k介电体的CMOS纳米器件的纳米级和器件级可靠性
2007 Spanish Conference on Electron Devices Pub Date : 1900-01-01 DOI: 10.1109/SCED.2007.384017
L. Aguilera, E. Amat, R. Rodríguez, M. Porti, M. Nafría, X. Aymerich
{"title":"Nanoscale and device level reliability of high-k dielectrics based CMOS nanodevices","authors":"L. Aguilera, E. Amat, R. Rodríguez, M. Porti, M. Nafría, X. Aymerich","doi":"10.1109/SCED.2007.384017","DOIUrl":"https://doi.org/10.1109/SCED.2007.384017","url":null,"abstract":"In this work, standard device level and nanoscale electrical tests have been carried out to evaluate the influence of the high-k and interfacial SiO2 layers on the degradation of HfO2/SiO2 gate stacks. At device level, the effect of static and dynamic electrical stresses has been investigated to evaluate the influence of the voltage polarity in the degradation of the gate stack. At nanoscale level, a Conductive Atomic Force Microscope (C-AFM) has allowed to separately investigate the effect of the electrical stress on the SiO2 and HfO2 layers. Both kinds of tests show that the SiO2 interfacial layer plays an important role in the degradation and breakdown of high-k gate stacks in CMOS advanced nanodevices.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125744449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Semi-classical study of the limitations of the "mean-field" approximation for the accurate simulation of nanometric devices “平均场”近似在纳米器件精确模拟中的局限性的半经典研究
2007 Spanish Conference on Electron Devices Pub Date : 1900-01-01 DOI: 10.1109/SCED.2007.383994
G. Albareda, J. Suñé, X. Oriols
{"title":"Semi-classical study of the limitations of the \"mean-field\" approximation for the accurate simulation of nanometric devices","authors":"G. Albareda, J. Suñé, X. Oriols","doi":"10.1109/SCED.2007.383994","DOIUrl":"https://doi.org/10.1109/SCED.2007.383994","url":null,"abstract":"For nanoscale electron devices, the role of a single-electron (or a single-impurity) can have a large impact on their electrical characteristics. A new method for introducing the long-range and short-range Coulomb interaction in Monte Carlo particle based simulations is presented. The method is based on directly dealing with a many-particle system by solving a different Poisson equation for each electron. The present work shows the numerical viability of this approach for the accurate simulation of nanoscale devices. The method is compared with the traditional \"mean-field\" approximation used in Monte Carlo simulators. The incapability of the \"mean field\" approximation to deal with the short-range Coulomb interaction is manifested. It is shown, numerically, that the \"mean-field\" approximation produces dramatic errors when small spatial steps are used.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130774415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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