pi栅极SOI mosfet拐角效应的研究

2007 Spanish Conference on Electron Devices Pub Date : 2007-03-01 DOI:10.1109/SCED.2007.383998

F. Ruiz, A. Godoy, F. Gámiz, L. Donetti, C. Sampedro

{"title":"pi栅极SOI mosfet拐角效应的研究","authors":"F. Ruiz, A. Godoy, F. Gámiz, L. Donetti, C. Sampedro","doi":"10.1109/SCED.2007.383998","DOIUrl":null,"url":null,"abstract":"Multiple gate SOI MOSFETs can give rise to the formation of independent channels with different threshold voltages. This phenomenon is the so called corner effects. In this work, we have carried out a thorough study of the corner effects on a Pi-Gate SOI MOSFET. To get our goal, we have developed a numerical simulator that solves the 2D Schrodinger-Poisson equations self-consistently in the structure under study.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"40 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Study of the Corner Effects on Pi-Gate SOI MOSFETs\",\"authors\":\"F. Ruiz, A. Godoy, F. Gámiz, L. Donetti, C. Sampedro\",\"doi\":\"10.1109/SCED.2007.383998\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multiple gate SOI MOSFETs can give rise to the formation of independent channels with different threshold voltages. This phenomenon is the so called corner effects. In this work, we have carried out a thorough study of the corner effects on a Pi-Gate SOI MOSFET. To get our goal, we have developed a numerical simulator that solves the 2D Schrodinger-Poisson equations self-consistently in the structure under study.\",\"PeriodicalId\":108254,\"journal\":{\"name\":\"2007 Spanish Conference on Electron Devices\",\"volume\":\"40 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Spanish Conference on Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SCED.2007.383998\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SCED.2007.383998","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 18

摘要

多栅极SOI mosfet可以形成具有不同阈值电压的独立通道。这种现象就是所谓的角落效应。在这项工作中，我们对pi栅极SOI MOSFET的拐角效应进行了深入的研究。为了实现我们的目标，我们开发了一个数值模拟器，可以在研究的结构中自洽地求解二维薛定谔-泊松方程。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Study of the Corner Effects on Pi-Gate SOI MOSFETs

Multiple gate SOI MOSFETs can give rise to the formation of independent channels with different threshold voltages. This phenomenon is the so called corner effects. In this work, we have carried out a thorough study of the corner effects on a Pi-Gate SOI MOSFET. To get our goal, we have developed a numerical simulator that solves the 2D Schrodinger-Poisson equations self-consistently in the structure under study.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 Spanish Conference on Electron Devices

自引率

0.00%

发文量