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2007 Spanish Conference on Electron Devices最新文献

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Light emitting devices in the visible obtained by PECVD and ion implantation 在可见光中通过PECVD和离子注入获得发光器件
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384056
M. Peralvarez, J. Barreto, O. Jambois, J. Carreras, C. Domínguez, J.A. Rodriguez, B. Garrido
{"title":"Light emitting devices in the visible obtained by PECVD and ion implantation","authors":"M. Peralvarez, J. Barreto, O. Jambois, J. Carreras, C. Domínguez, J.A. Rodriguez, B. Garrido","doi":"10.1109/SCED.2007.384056","DOIUrl":"https://doi.org/10.1109/SCED.2007.384056","url":null,"abstract":"Field-effect induced luminescence has been achieved from Si nanocrystals under alternate polarization. The emitting devices have a typical metal-oxide-semiconductor structure with a semitransparent polycrystalline Si top contact ~250 nm thick. The active layers have a thickness of ~45 nm and have been fabricated either by Si+ ion implantation into thermally grown silicon oxide or by plasma enhanced chemical vapour deposition (PECVD). The performances of both kinds of test structures have been analyzed and compared. In implanted devices, the application of a pulsed negative excitation gives rise to a luminescence combining a continuous and an alternate component. In particular, the continuous one proportionally increases with the Si amount, meanwhile the alternate one appears to be more sensible to quantum confinement effects in the Si nanocrystals. The threshold voltage of electroluminescence is about 3-4 V. PECVD devices exhibit a higher threshold (~18 V) and, in contrast with implanted samples, no continuous component is observed. Energy filtered transmission electron microscopy (EFTEM) results suggest that these differences are due to the partial depletion of silicon nanocrystals in PECVD devices in a tiny region close to the substrate.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116110477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Implementation of a quantum corrections in a 3D parallel drift-diffusion simulator 三维平行漂移扩散模拟器中量子校正的实现
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383995
A. García-Loureiro, K. Kalna, A. Asenov
{"title":"Implementation of a quantum corrections in a 3D parallel drift-diffusion simulator","authors":"A. García-Loureiro, K. Kalna, A. Asenov","doi":"10.1109/SCED.2007.383995","DOIUrl":"https://doi.org/10.1109/SCED.2007.383995","url":null,"abstract":"We describe an implementation of density-gradient quantum corrections in a 3D drift-diffusion (D-D) semiconductor simulator based on finite element method. Mesh efficiency of the 3D semiconductor device simulator with quantum mechanical corrections is achieved by parallelisation of the code for a memory distributed multiprocessor environment. The Poisson equation, the current continuity equation, and the density gradient equation with an appropriate finite element discretisation have to be solved iteratively. Moreover, parallel algorithms are employed to speed up the self-consistent solution. In order to test our 3D semiconductor device simulator, we have carried out a careful calibration against experimental I-V characteristics of a 67 nm Si MOSFET achieving an excellent agreement. Then we demonstrate a relative impact of quantum mechanical corrections in this device.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123646178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optical Switch for Instrumentation Based on Liquid Crystals 基于液晶的仪器光学开关
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384038
C. Vázquez, P. C. Lallana, D. Montero, J. Peña, J. Otón
{"title":"Optical Switch for Instrumentation Based on Liquid Crystals","authors":"C. Vázquez, P. C. Lallana, D. Montero, J. Peña, J. Otón","doi":"10.1109/SCED.2007.384038","DOIUrl":"https://doi.org/10.1109/SCED.2007.384038","url":null,"abstract":"In this work, a novel structure for optical characterization is proposed. An optical 1x3 multiplexer in addition with polymer optical fiber allows the application of three different wavelengths to the device under test without setup modification: 495 nm, 650 nm and 850 nm. Insertion losses less than 4 dB, an isolation better than 23 dB and a switching time better than 30 ms have been measured at 650 nm.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"86 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120921036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of Tapered Lasers with Separate Contacts 具有分离触点的锥形激光器的仿真
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383956
H. Odriozola, J. Tijero, L. Borruel, S. Sujecki, E. Larkins, I. Esquivias
{"title":"Simulation of Tapered Lasers with Separate Contacts","authors":"H. Odriozola, J. Tijero, L. Borruel, S. Sujecki, E. Larkins, I. Esquivias","doi":"10.1109/SCED.2007.383956","DOIUrl":"https://doi.org/10.1109/SCED.2007.383956","url":null,"abstract":"A simulation model for tapered lasers with separated contacts has been developed. The model has been used to simulate 980 nm In-Ga-As devices with separated injection of the ridge-waveguide and taper sections. A good qualitative agreement with experimental results has been obtained. The physical origin of the observed improvements in the beam quality by stronger pumping of the ridge waveguide section is discussed.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"24 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134104926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
c-Si surface passivation for photovoltaic applications by means of antireflective amorphous silicon carbide layers 采用抗反射非晶碳化硅层的光伏应用c-Si表面钝化
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384036
R. Ferré, I. Martín, Pedro A. Ortega, M. Vetter, M. Garín, R. Alcubilla
{"title":"c-Si surface passivation for photovoltaic applications by means of antireflective amorphous silicon carbide layers","authors":"R. Ferré, I. Martín, Pedro A. Ortega, M. Vetter, M. Garín, R. Alcubilla","doi":"10.1109/SCED.2007.384036","DOIUrl":"https://doi.org/10.1109/SCED.2007.384036","url":null,"abstract":"Surface passivation of p-type silicon wafers was performed by amorphous silicon carbide films (SiCx) deposited by plasma enhanced chemical vapor deposition (PECVD). Stacks of two different SiCx layers were applied. The inner layer was rich in silicon and offered good passivation properties. The outer layer was a carbon rich, antireflective coating. Anneals in forming gas were performed to improve surface passivation. Simulation of lifetime measurements indicated the nature of the passivating mechanism. Finally, optical constants were determined by ellipsometry measurements.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128912537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A Study on Band Nonparabolicity Effects in Nanostructures 纳米结构中能带非抛物性效应的研究
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384061
F. Gómez-Campos, S. Rodríguez-Bolívar, J. E. Carceller
{"title":"A Study on Band Nonparabolicity Effects in Nanostructures","authors":"F. Gómez-Campos, S. Rodríguez-Bolívar, J. E. Carceller","doi":"10.1109/SCED.2007.384061","DOIUrl":"https://doi.org/10.1109/SCED.2007.384061","url":null,"abstract":"In this work we develop a simple method to study the effects of the nonparabolicity of the bands on the carrier states for a general nanostructure under a constant electrostatic potential. In these conditions we show the way to exactly include the nonparabolic corrections after solving the parabolic Schrodinger equation for a given nanostructure.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124202427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Piezoresistive Microcantilevers for Biomolecular Force Detection 用于生物分子力检测的压阻式微悬臂
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384029
G. Villanueva, G. Rius, J. Montserrat, F. Pérez-Murano, J. Bausells
{"title":"Piezoresistive Microcantilevers for Biomolecular Force Detection","authors":"G. Villanueva, G. Rius, J. Montserrat, F. Pérez-Murano, J. Bausells","doi":"10.1109/SCED.2007.384029","DOIUrl":"https://doi.org/10.1109/SCED.2007.384029","url":null,"abstract":"This paper reports the development of piezoresistive microcantilevers for the detection of biomolecules by the measurement of intermolecular binding forces. The detection of the small forces involved in molecular recognition (<100 pN) requires cantilevers with a high force sensitivity and small spring constant. This can be obtained with cantilevers with submicron thickness and width in the micrometer range. We have fabricated polycrystalline silicon cantilevers in a dedicated technology and also in a commercial CMOS process. The cantilevers have been tested by applying a known displacement with an AFM instrument. For the CMOS-integrated cantilevers, which include on-chip amplifying circuits, a force sensitivity of 11 muV/pN and a force resolution of 27 pN have been measured.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124456816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Electrical characterization of new electrochromic devices 新型电致变色器件的电学特性
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383959
R. Vergaz, D. Barrios, J. Sánchez-Pena, C. Pozo‐Gonzalo, J. Pomposo
{"title":"Electrical characterization of new electrochromic devices","authors":"R. Vergaz, D. Barrios, J. Sánchez-Pena, C. Pozo‐Gonzalo, J. Pomposo","doi":"10.1109/SCED.2007.383959","DOIUrl":"https://doi.org/10.1109/SCED.2007.383959","url":null,"abstract":"Electrochromic devices change their color and optical properties with applied voltage. A new symmetrical electrochromic configuration was constructed in previous works, where PEDOT acted as electrochromic layer or as counter electrode layer, depending on the polarity of the applied voltage. Devices of around 500mm2 and switching voltages from 0,5V to 2V are used in this work. Measured electrochemical impedance is fitted to an equivalent circuit based on a Randies cell, with Warburg impedance simulating ionic diffusion at low frequencies. Voltage dependence is analyzed for the first time in this kind of devices. Results show homogeneity problems in the contact layers, not seen in normal operation, and the voltage dependence on some construction parameters. This will be used to improve the devices construction, but improvements in the equivalent circuit should also be made. The proposed equivalent circuit is not valid after the redox reaction, from 1.5 to 2V.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128632832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Iterative maps for the nonlinear Pulsed Digital Oscillator for MEMS MEMS非线性脉冲数字振荡器的迭代映射
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383957
J. Ricart, J. Pons, M. Domínguez
{"title":"Iterative maps for the nonlinear Pulsed Digital Oscillator for MEMS","authors":"J. Ricart, J. Pons, M. Domínguez","doi":"10.1109/SCED.2007.383957","DOIUrl":"https://doi.org/10.1109/SCED.2007.383957","url":null,"abstract":"The Pulsed Digital Oscillator (PDO) is a sigma- delta based structure that has been proposed as a control circuit for several applications based on MEMS. A generic PDO is a sampled system that includes a MEMS resonator plus a comparator and a digital feedback loop providing the force pulses that actuate the MEMS device [2]. The most typical PDO topologies include simple and double feedback loops. This paper presents a comparison between both topologies by using the iterative maps as a new tool to analyze the nonlinearity effects on the dynamic behavior of the oscillator. To this effect, discrete-time simulation results of different PDO structures under different damping conditions are presented and analyzed.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130135559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of the Limiting Efficiencies of Photovoltaic Converters under Monochromatic Illumination 单色照明下光伏转换器的极限效率评价
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384045
R. Peña, C. Algora
{"title":"Evaluation of the Limiting Efficiencies of Photovoltaic Converters under Monochromatic Illumination","authors":"R. Peña, C. Algora","doi":"10.1109/SCED.2007.384045","DOIUrl":"https://doi.org/10.1109/SCED.2007.384045","url":null,"abstract":"This paper deals with the evaluation of the limiting efficiencies of photovoltaic converters under monochromatic illumination. The maximum achievable efficiency of the converters under ideal conditions of operation is calculated, obtaining their open circuit voltage (Voc) and photocurrent (JL) too. Special attention is paid to the wavelengths commonly used in Power-by-light (PBL) systems, those over 600 nm, particularly to those corresponding to Gallium Arsenide, Silicon, and Gallium Antimonide converters. The Detailed Balance Theory has been used for this purpose, adapting their assumptions and equations to the particularities of monochromatic illumination.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116643175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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