X. Quintana, M. Geday, B. Cerrolaza, D. Pérez-Medialdea, N. Bennis, J. Otón
{"title":"Measurement of Pretilt Angle and Cell Gap in Reflective Vertically Aligned Nematics","authors":"X. Quintana, M. Geday, B. Cerrolaza, D. Pérez-Medialdea, N. Bennis, J. Otón","doi":"10.1109/SCED.2007.384041","DOIUrl":"https://doi.org/10.1109/SCED.2007.384041","url":null,"abstract":"An experimental setup to measure the pretilt angle and cell gap in reflective VAN (vertically aligned nematic liquid crystals) has been developed. This setup, based on the rotation method, has been modified in order to measure simultaneously high pretilt angles in reflective cells along with the cell gap. The determination of the pretilt angle is achieved by finding the rotation angle for maximum and minimum transmittances.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122177539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Aldegunde, A. García-Loureiro, K. Kalna, A. Asenov
{"title":"Mesh Generation for \"Atomistic\" Simulation of Nanometre Scale MOSFETs","authors":"M. Aldegunde, A. García-Loureiro, K. Kalna, A. Asenov","doi":"10.1109/SCED.2007.384003","DOIUrl":"https://doi.org/10.1109/SCED.2007.384003","url":null,"abstract":"We study intrinsic parameter fluctuations caused by atomicity of matter in a 10 nm gate length MOSFET through the use of a 3D parallel drift-diffusion simulator. To carry out the study we have developed a meshing scheme which allows to take into account the actual positions of the dopants in the crystal lattice. We illustrate the impact of random positions of dopants on the threshold voltage and the drain current of the device.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114354846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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