纳米尺度mosfet“原子”模拟的网格生成

2007 Spanish Conference on Electron Devices Pub Date : 1900-01-01 DOI:10.1109/SCED.2007.384003

M. Aldegunde, A. García-Loureiro, K. Kalna, A. Asenov

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引用次数: 0

摘要

利用三维平行漂移扩散模拟器研究了10 nm栅长MOSFET中物质原子性引起的内在参数波动。为了进行这项研究，我们开发了一种网格方案，可以考虑到掺杂剂在晶格中的实际位置。我们说明了掺杂剂的随机位置对器件的阈值电压和漏极电流的影响。

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Mesh Generation for "Atomistic" Simulation of Nanometre Scale MOSFETs

We study intrinsic parameter fluctuations caused by atomicity of matter in a 10 nm gate length MOSFET through the use of a 3D parallel drift-diffusion simulator. To carry out the study we have developed a meshing scheme which allows to take into account the actual positions of the dopants in the crystal lattice. We illustrate the impact of random positions of dopants on the threshold voltage and the drain current of the device.

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2007 Spanish Conference on Electron Devices

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