E. Valera, J. Ramón‐Azcón, Francisco J. Sanchez, L. Castañer, M. Marco, A. Rodríguez
{"title":"High frequency response of a novel biosensor based on interdigitated μ-electrodes (IDμE's)","authors":"E. Valera, J. Ramón‐Azcón, Francisco J. Sanchez, L. Castañer, M. Marco, A. Rodríguez","doi":"10.1109/SCED.2007.384025","DOIUrl":"https://doi.org/10.1109/SCED.2007.384025","url":null,"abstract":"A novel impedimetric biosensor for detection of a wide variety of compounds has been designed and developed. The biosensor is based on a non-isolated surface and non-labelled immunoreactives. The chemical recognition layer was deposited on the surface of the interdigitated μ-electrodes (IDμE's) area (fingers and inter-digits space). Typically, the biosensors and their functionalization are characterized by chemical affinity methods, and impedance spectroscopy in frequencies ranges of 0.1 mHz to 100 kHz. This work describes the biosensor characterization to 1 MHz and the biosensor response without buffer solution to the pesticide atrazine. This work presents an alternative detection method using this biosensor, which was designed to be characterized in the range of frequencies usual in impedance spectroscopy. This detection method allows a simple measure, an easy interpretation and from the electronic point of view is very suitable.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121825038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. C. López, B. Galiana, C. Algora, I. Rey‐Stolle, I. García, M. Gabás, J. Ramos-Barrado
{"title":"ARXPS characterization of InGaP/GaAs heterointerface grown by MOVPE","authors":"M. C. López, B. Galiana, C. Algora, I. Rey‐Stolle, I. García, M. Gabás, J. Ramos-Barrado","doi":"10.1109/SCED.2007.384019","DOIUrl":"https://doi.org/10.1109/SCED.2007.384019","url":null,"abstract":"This paper studies the chemical composition of the hetereointerface of the semiconductors InGaP/GaAs, grown by metal organic vapor phase epitaxy (MOVPE), by means of X-ray Photoelectrons Spectroscopy (XPS) by two methods: conventional XPS with Ar+ sputtering and by angle resolved XPS (ARXPS). Firstly, from the corrected Auger parameter for different angles, we have determined the depth of the Ga oxide in the superficial GaAs layer by environmental contamination and we have studied its influence in the interface. The thickness of Ga2O3 is only of some Armstrong and it no presents an important influence in the interface.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133715229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Goñi, J. del Pino, J. García, B. González, S. Khemchandani, A. Hernández
{"title":"A Physical-based Method for Parameter Extraction of On-Chip Spiral Inductor","authors":"A. Goñi, J. del Pino, J. García, B. González, S. Khemchandani, A. Hernández","doi":"10.1109/SCED.2007.384068","DOIUrl":"https://doi.org/10.1109/SCED.2007.384068","url":null,"abstract":"In this work, a new comprehensive method to extract the inductor equivalent model parameters is developed. Frequency-dependent expressions for the model components are obtained from the simplification of the pi-model Y-parameter equations. By analyzing the influence of the components value on the inductor quality factor and inductance, the frequencies at which the parameters will be evaluated are selected. The method has been validated by comparison with measurements of inductors fabricated in a 0.35 mum process. Results show a good agreement over a broad-band frequency up to 10 GHz.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133044160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Galiana, I. García, J. González, M. Baudrit, I. Rey‐Stolle, C. Algora
{"title":"III-V multijunction solar cells for concentrations around 1000X: the IES-UPM strategy","authors":"B. Galiana, I. García, J. González, M. Baudrit, I. Rey‐Stolle, C. Algora","doi":"10.1109/SCED.2007.384037","DOIUrl":"https://doi.org/10.1109/SCED.2007.384037","url":null,"abstract":"The IES-UPM has a large trajectory in the III-V concentration solar cells research. Nowadays, the long term aim is to achieve efficiencies around 35% at 1000 X by multijunction solar cells and to transfer the technology to industry. For this purpose three complementary lines are ongoing: the growth of III-V and solar cells structures by MOVPE, the reliability study of concentrator solar cells and the modeling of the devices by means of distributed models.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114586632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"InAlAs/InGaAs heteroestructures for THz generation","authors":"S. Pérez, J. Mateos, D. Pardo, T. González","doi":"10.1109/SCED.2007.384010","DOIUrl":"https://doi.org/10.1109/SCED.2007.384010","url":null,"abstract":"We present a microscopic analysis of current fluctuations in InAIAs/InGaAs slot diodes (base of HEMT devices). An ensemble Monte Carlo simulation is used for the calculations. We analyze the origin of the strong THz oscillations appearing when the bias surpasses 0.5 V. This effect is apparently caused by the presence of Gunn-like oscillations whose dynamics is controlled by ballistic Gamma-valley electrons in the channel. These carriers are capable to reach extremely high velocities due to (i) the influence of degeneracy effects, which significantly reduces the rate of scattering mechanisms, and (ii) the presence of the recess, which strongly accelerate the electrons, launching them into the drain region. The influence of the effective distance travelled by the domain and the recess length are analyzed in order to improve the control of the frequency and magnitude of the oscillations.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"541 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117046016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Dielectric charging in MEMS switches after ion-gun irradiation","authors":"D. Molinero, L. Castañer","doi":"10.1109/SCED.2007.384027","DOIUrl":"https://doi.org/10.1109/SCED.2007.384027","url":null,"abstract":"In this paper we introduce a novel method to characterize dielectric charging phenomena based on the discharge current measurement. The dielectric is charged using an ion gun radiation. It is shown that both the charge sign and amount can be independently measured and that the results can be related to the pull-in shift as measured from C-V characteristics. Analysis of several time constants extracted from discharge current measurement provides further insight on the charge dynamics, governed by the dielectric parameters.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117060559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. González-Castilla, J. Malo, L. Vergara, J. Olivares, M. Clement, J. Ignacio Izpura, J. Sangrador, E. Iborra
{"title":"MEMS Actuated Piezoelectrically with AlN Films","authors":"S. González-Castilla, J. Malo, L. Vergara, J. Olivares, M. Clement, J. Ignacio Izpura, J. Sangrador, E. Iborra","doi":"10.1109/SCED.2007.384033","DOIUrl":"https://doi.org/10.1109/SCED.2007.384033","url":null,"abstract":"We analyse the mechanical response of a doubly-clamped microbridge actuated piezoelectrically using sputtered AlN, working first as an actuator and then as a resonator. The quasi-static response of the microbridge under DC electrical excitation is measured. Out-of-plane displacements as high as 0.22 mum/V are obtained, which provides an actuation response suitable for RF switching applications. On the other hand, the resonance frequencies of the microbridges are determined by means of laser interferometry. We compare the response of microbridges with different dimensions and different initial buckling (induced by the residual stress of the layers). We show that it is possible to perform a rough tuning of the resonance frequencies by allowing a determined amount of built-in stress in the microbridge during its fabrication. For a given resonator, a DC bias added to the AC excitation signal allows to fine-tune the resonance frequencies. Our microbridges yield a tuning factor of around 88 Hz/V for a 500 mum-long microbridge.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124005067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Ivanov, F. Blanco, I. Gràcia, N. Sabaté, A. Ruiz, X. Vilanova, X. Correig, L. Fonseca, E. Figueras, J. Santander, C. Cané
{"title":"Silicon μ-preconcentrator for improved gas detection","authors":"P. Ivanov, F. Blanco, I. Gràcia, N. Sabaté, A. Ruiz, X. Vilanova, X. Correig, L. Fonseca, E. Figueras, J. Santander, C. Cané","doi":"10.1109/SCED.2007.384031","DOIUrl":"https://doi.org/10.1109/SCED.2007.384031","url":null,"abstract":"In this study we present a μ-preconcentrator unit fabricated with silicon technology. The unit consists of a 3D-microheater surrounded by an insulating membrane. The preconcentrator is made up of a grid of suspended silicon bars underneath a polysilicon resistor. The grid was formed by 40 μm-wide, 520 μm-depth, 3000 μm-long silicon bars fabricated by deep reactive ion etching covering a 3 x 3 mm2 area. This type of silicon grid structure allows holding large amount of absorbent materials and provides efficient heat diffusion.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124614373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Aboy, L. Pelaz, P. López, J. Montserrat, F. J. Bermudez
{"title":"Boron Electrical Activation in SOI Compared to Bulk Si Substrates","authors":"M. Aboy, L. Pelaz, P. López, J. Montserrat, F. J. Bermudez","doi":"10.1109/SCED.2007.383988","DOIUrl":"https://doi.org/10.1109/SCED.2007.383988","url":null,"abstract":"We investigate the influence of the buried Si/SiO2 interface in Silicon-On-Insulator (SOI) substrates on B electrical activation by comparing experimental data and atomistic simulations in bulk Si and SOI materials. In crystalline Si, the effect of the Si/SiO2 interface on the formation of B clusters is practically negligible because they are formed rapidly and locally in the region with high B and Si interstitial concentrations. During post-implant anneal less diffusion occurs and a slight acceleration of B activation is observed, as the Si/SiO2 interface increases the removal of Si interstitials and facilitates B cluster dissolution. In pre-amorphized Si, B clusters form during the recrystallization of the pre-amorphized layer. Therefore, the effect of the Si/SiO2 interface is mainly related to its influence on end of range defect (EOR) evolution after regrowth which in turn affects B deactivation and subsequent reactivation. Our simulations show that slightly less B deactivation occurs in SOI compared to bulk Si samples since the Si/SiO2 interface accelerates EOR defect dissolution. The effect is more significant as EOR damage is closer to the Si/SiO2 interface compared to the distance from EOR damage to the silicon surface.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121945934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"μ-Porous silicon (μPS) gas sensor based on interdigitated μ-electrodes (IDμE's)","authors":"E. Valera, O. Casals, M. Vetter, A. Rodríguez","doi":"10.1109/SCED.2007.384026","DOIUrl":"https://doi.org/10.1109/SCED.2007.384026","url":null,"abstract":"A μ-porous silicon (μPS) gas sensor based on interdigitated μ-electrodes (IDμE's) has been designed and developed. μPS obtained by means of electrochemical anodization of a p-type silicon (c-Si) wafer was used as active layer. The μPS layers are supported by the bulk of the c-Si wafer. Interdigitated μ-electrodes, which work as transducers, were deposited on the μPS surface by means of gold evaporation using shadow mask technique. Different IDμE's, with different geometries and dimensions have been deposited. Additionally, different conditions of μPS formation, as i.e. electrolyte concentration, current density and anodization time, were used in order to obtain different actives layers with different absorption capabilities. Clear responses to organic vapors such us ethanol have been obtained.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131014082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}