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2007 Spanish Conference on Electron Devices最新文献

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High Q factor RF MEMS Tunable Metallic Parallel Plate Capacitor 高Q因子射频MEMS可调谐金属平行板电容器
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383960
J. Etxeberria, F. J. Gracia
{"title":"High Q factor RF MEMS Tunable Metallic Parallel Plate Capacitor","authors":"J. Etxeberria, F. J. Gracia","doi":"10.1109/SCED.2007.383960","DOIUrl":"https://doi.org/10.1109/SCED.2007.383960","url":null,"abstract":"This paper reports the fabrication and electrical characterization of a MEMS metallic tunable capacitor to be used as voltage controlled device in tuning telecommunication circuits. A novel fabrication process to obtain parallel plate metallic capacitors based on deep reactive ion etching (DRIE) bulk micromachining techniques have been developed. Devices of three different electrode areas have been fabricated and the influence of the area in the main characteristics of the MEMS capacitors has been established. The interaction of the DC tuning voltage and AC signal and their influence on the tuning behavior has been analyzed and the top limits have been estimated. This fabrication process already had been used to develop zipper actuation capacitors but not to fabricate parallel plate actuation capacitors. The obtained results make this kind of MEMS tunable metallic capacitors appropriate candidates for its use in the new power MEMS scenario.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133154768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Surface Charge Effects in Ballistic T-Branch Nanojunctions 弹道t支纳米结的表面电荷效应
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383993
I. Íñiguez-de-la-Torre, J. Mateos, T. González, D. Pardo, S. Bollaert, Y. Roelens, A. Cappy
{"title":"Surface Charge Effects in Ballistic T-Branch Nanojunctions","authors":"I. Íñiguez-de-la-Torre, J. Mateos, T. González, D. Pardo, S. Bollaert, Y. Roelens, A. Cappy","doi":"10.1109/SCED.2007.383993","DOIUrl":"https://doi.org/10.1109/SCED.2007.383993","url":null,"abstract":"We analyze the influence of the surface charge on the operation of ballistic T-branch junctions based on InAlAs/InGaAs layers by means of a semi-classical 2-D Monte Carlo simulator. For this sake we propose a new self-consistent model in which the local value of the surface charge is dynamically adjusted depending on the surrounding carrier density. We will show that the TBJ rectifying behavior, that is the down-bending shape of the output voltage VC as a function of the applied voltage, VR= -VL=V, is found to be much influenced by the surface charge. A satisfactory agreement is achieved between simulated results and experimental measurements.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133302918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Parameter Extraction Method using Genetic Algorithms for an Improved OTFT Compact Model 基于遗传算法的改进OTFT紧凑模型参数提取方法
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383996
P. Moreno, R. Picos, M. Roca, E. García-Moreno, B. Iiguez, M. Estrada
{"title":"Parameter Extraction Method using Genetic Algorithms for an Improved OTFT Compact Model","authors":"P. Moreno, R. Picos, M. Roca, E. García-Moreno, B. Iiguez, M. Estrada","doi":"10.1109/SCED.2007.383996","DOIUrl":"https://doi.org/10.1109/SCED.2007.383996","url":null,"abstract":"In this paper, an improved compact OTFT model extending previous models into the subthreshold regime is presented. Two parameter extraction techniques using genetic algorithms (queen-bee and crossing-mates) are considered in order to determine the values of the main model parameters. The model and parameter extraction procedures are applied to a set of experimental measures in OTFTs from Infineon. Agreement between experimental and modelled DC I-V characteristics is excellent with both extraction methods but crossing-mates algorithm is faster and its results are more independent of the initial conditions.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122347061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Physics based models for process optimization 基于物理的工艺优化模型
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383983
L. Pelaz, L. Marqués, M. Aboy, P. López, I. Santos
{"title":"Physics based models for process optimization","authors":"L. Pelaz, L. Marqués, M. Aboy, P. López, I. Santos","doi":"10.1109/SCED.2007.383983","DOIUrl":"https://doi.org/10.1109/SCED.2007.383983","url":null,"abstract":"The shrinking of Si device dimensions has revealed the need of detailed atomistic models to gain better understanding of physical mechanisms involved in device fabrication as a way for process optimization. Our atomistic model for amorphization based on the accumulation of bond defects captures the sensitivity of defect accumulation to implant parameters, such as wafer temperature or flux. These parameters affect the width of amorphous layers formed by ion implantation and, as a result, the residual damage that remains beyond the amorphous/crystalline interface after solid phase epitaxial regrowth at low temperature. During additional higher temperature anneals, Si interstitials from the end of range are injected and cause B deactivation through the growth of preexisting B clusters in the regrown amorphous layer. The presence of impurities, such as F or C acting as Si interstitial traps, may prevent Si interstitials from reaching B atoms, and thus, the undesirable enhanced B diffusion and deactivation.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"5 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117029927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of InGaN based photodiodes by internal field engineering 基于InGaN的光电二极管的内场工程设计
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384051
J. Pereiro, C. Rivera, J. Pau, A. Navarro, S. Fernández-Garrido, E. Muñoz, R. Czernecki, S. Grzanka, M. Leszczyński
{"title":"Design of InGaN based photodiodes by internal field engineering","authors":"J. Pereiro, C. Rivera, J. Pau, A. Navarro, S. Fernández-Garrido, E. Muñoz, R. Czernecki, S. Grzanka, M. Leszczyński","doi":"10.1109/SCED.2007.384051","DOIUrl":"https://doi.org/10.1109/SCED.2007.384051","url":null,"abstract":"In this paper, the role of piezoelectric fields on the performance of multiple-quantum-well based PIN photodetectors is studied. It is shown that the responsivity critically depends, through the effect of piezoelectric fields, on the growth sequence starting either from an n-type substrate (standard PIN) or from a p-type substrate (inverted PIN). Piezoelectric fields and junction built-in fields are aligned in the inverted PIN structure, thus increasing the collection efficiency as shown from theoretical calculations. In contrast to the blueshift found in the photoresponse of standard PIN structures, the inverted PIN structures exhibited a redshifted with increasing reverse voltage. Three different photodetector structures have been designed, grown, processed and characterized. Doping levels and barrier dimensions have also been engineered to improve the detector responsivity.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114236937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reflection Analysis of 2D-photonic Crystal Lattice Using Bragg-diffraction phenomena 基于bragg衍射现象的二维光子晶格反射分析
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384050
Z. Kral, J. Ferré‐Borrull, L. Marsal, J. Pallarès, T. Trifonov, A. Rodríguez, R. Alcubilla
{"title":"Reflection Analysis of 2D-photonic Crystal Lattice Using Bragg-diffraction phenomena","authors":"Z. Kral, J. Ferré‐Borrull, L. Marsal, J. Pallarès, T. Trifonov, A. Rodríguez, R. Alcubilla","doi":"10.1109/SCED.2007.384050","DOIUrl":"https://doi.org/10.1109/SCED.2007.384050","url":null,"abstract":"We have investigated an experimental technique to determine the lattice constant of a two-dimensional photonic crystal membrane using Bragg-diffraction measured with a FT-IR spectrometer. The membrane consisted of square air holes electrochemically etched through N-type silicon wafer. The measured data were fitted to a theoretical model to determine the lattice constant. The results were compared with the observation by an optical microscope.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126812342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Real metals in metallo-dielectric photonic crystals in the visible 可见的金属介电光子晶体中的真实金属
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384052
J. Ferré‐Borrull, E. Xifré-Pérez, L. Marsal, J. Pallarès
{"title":"Real metals in metallo-dielectric photonic crystals in the visible","authors":"J. Ferré‐Borrull, E. Xifré-Pérez, L. Marsal, J. Pallarès","doi":"10.1109/SCED.2007.384052","DOIUrl":"https://doi.org/10.1109/SCED.2007.384052","url":null,"abstract":"A study of the defect modes in metallo-dielectric photonic crystals with real metallic components and real background materials is presented. Because of the frequency-dependent nature of the dielectric function of the metal, it is shown that the dependence of the photonic bands and band gaps with the geometric characteristics of the photonic crystal is different than what is expected in common all dielectric photonic crystals. We show an example of the field distribution of the defect modes and analyze the dependence of their resonant wavelength with the size of the defect scatterer.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127510163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optimisation of SiNx:H anti-reflection coatings for silicon solar cells 硅太阳能电池用SiNx:H增透涂层的优化
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383961
J. Hofstetter, C. del Cañizo, S. Ponce-Alcántara, A. Luque
{"title":"Optimisation of SiNx:H anti-reflection coatings for silicon solar cells","authors":"J. Hofstetter, C. del Cañizo, S. Ponce-Alcántara, A. Luque","doi":"10.1109/SCED.2007.383961","DOIUrl":"https://doi.org/10.1109/SCED.2007.383961","url":null,"abstract":"The deposition of SiNx:H as anti-reflection coating has become a standard step in industrial production of silicon solar cells. In the present work the improvement of the anti-reflection properties and thus the improvement of the short circuit current density by deposition of a SiNx:H double layer coating are investigated. It is shown that an optimised double layer coating with indices n1 ap 1.8 and n2 ap 2.1 only leads to an 1.3% improvement of short circuit current in comparison to an optimised single layer coating with n ap 1.9. But the deposition of a SiNx:H layer with higher refractive index on the silicon surface is supposed to lead to a good surface and bulk passivation. The passivating properties of the optically optimised double layer coating will be investigated in following experiments.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131278598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Effect of thickness on bifacial silicon solar cells 厚度对双面硅太阳能电池的影响
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384035
A. C. Pan, C. Cañizo, A. Luque
{"title":"Effect of thickness on bifacial silicon solar cells","authors":"A. C. Pan, C. Cañizo, A. Luque","doi":"10.1109/SCED.2007.384035","DOIUrl":"https://doi.org/10.1109/SCED.2007.384035","url":null,"abstract":"The influence of the thickness reduction of bifacial solar cells has been investigated using Czochralski (Cz) substrates with thicknesses of 140 and 240 mum. Thickness reduction has increased cell performance for both illumination modes, and unlike the conventional structure, the thin one presents higher efficiency when illuminated by the n+n junction. The good light trapping properties and low rear recombination have revealed efficient once the influence of bulk recombination is reduced thanks to thinning.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130364418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Monte Carlo analysis of tunneling and thermionic transport in a reverse biased Schottky diode 反向偏置肖特基二极管中隧穿和热离子输运的蒙特卡罗分析
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384005
E. Pascual, R. Rengel, M. Martín
{"title":"Monte Carlo analysis of tunneling and thermionic transport in a reverse biased Schottky diode","authors":"E. Pascual, R. Rengel, M. Martín","doi":"10.1109/SCED.2007.384005","DOIUrl":"https://doi.org/10.1109/SCED.2007.384005","url":null,"abstract":"A Monte Carlo investigation of transport through Schottky barriers is presented. A WKB based injection-absorption model has been developed, thus allowing correctly reproducing the experimental J-V curves. The reverse-bias regime is analyzed in depth, and the main features of charge transport (including the evidence of quasiballistic phenomena) are discussed by considering internal quantities such as average energy, velocity and concentration of carriers, electric field and potential profiles, together with velocity distribution functions. Tunneling processes show to have a great importance for low and moderately high reverse applied voltages.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132837699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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