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2007 Spanish Conference on Electron Devices最新文献

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Atomistic Simulation of Damage Accumulation during Shallow B and As Implant into Si 浅B和As注入Si损伤累积的原子模拟
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383987
P. López, L. Pelaz, L. Marqués, I. Santos, J. A. Van den Berg
{"title":"Atomistic Simulation of Damage Accumulation during Shallow B and As Implant into Si","authors":"P. López, L. Pelaz, L. Marqués, I. Santos, J. A. Van den Berg","doi":"10.1109/SCED.2007.383987","DOIUrl":"https://doi.org/10.1109/SCED.2007.383987","url":null,"abstract":"We have used atomistic simulations to analyze differences experimentally observed in damage distributions of low-energy B and As implant at room temperature. The proximity to the surface, which favors damage accumulation, and the variations in the damage topology due to the different ion mass of B and As are the key factors to understand their damage profiles. Damage distribution after a B implant presents two peaks: a shallow one corresponding to an amorphous layer extending from the surface, and a deep one due to the excess Si interstitials close to the mean projected range of the implant. On the contrary, the compact damage generated by the heavy As ions accumulates both from the surface and from the mean projected range, leading to a continuous amorphous layer that extends from the surface to beyond the mean projected range.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114632869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photonic sensors based on integrated reflectivity, ellipsometry and spectrometry measurements in submicron size geometries 光子传感器基于集成反射率，椭偏和光谱测量在亚微米尺寸几何
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384062
R. Casquel, M. Holgado, C. Molpeceres, M. Morales, J. Ocaña
{"title":"Photonic sensors based on integrated reflectivity, ellipsometry and spectrometry measurements in submicron size geometries","authors":"R. Casquel, M. Holgado, C. Molpeceres, M. Morales, J. Ocaña","doi":"10.1109/SCED.2007.384062","DOIUrl":"https://doi.org/10.1109/SCED.2007.384062","url":null,"abstract":"We have developed micro-nano structures as photonic sensors based on the observation of external reflectivity profiles. Spectra interference patterns as a function of the angle of incidence for both s and p polarizations directions as well as a phase shift between s and p polarisation are obtained. Also the reflectivity of the photonic structures is calculated and analyzed over a wide range of wavelengths of light as well. The sub-micro holes of the photonic structure have been evaluated with several refractive indices. As a result, the change in the effective refractive index involved by the optical liquids produces variations in the phase shift and the interference reflectivity patterns, making the system suitable for chemical, biochemical and pharmaceutical applications. The theoretical results of the integrated reflectivity, ellipsometry and spectrometry measurements ensure sensitive, accurate and reliable optical sensing detection.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115034000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Role of Doping and Thickness of Emitter in the Efficiency of Monocrystalline Si Solar Cells 掺杂和发射极厚度对单晶硅太阳电池效率的影响
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384040
C. Vázquez, J. Alonso, M. A. Vázquez, L. J. Caballero, A. Martinez, R. Romero, J. Ramos-Barrado
{"title":"Role of Doping and Thickness of Emitter in the Efficiency of Monocrystalline Si Solar Cells","authors":"C. Vázquez, J. Alonso, M. A. Vázquez, L. J. Caballero, A. Martinez, R. Romero, J. Ramos-Barrado","doi":"10.1109/SCED.2007.384040","DOIUrl":"https://doi.org/10.1109/SCED.2007.384040","url":null,"abstract":"In order to improve the efficiency of Czocharalski - Si (Cz-Si) photovoltaic cells, we have studied the distribution losses from recombination in Cz-Si commercial standard cell (Isofoton S.A.) by means of I-V measurements under solar simulation illumination with a surface irradiance of 1000 W/m2 and a light spectrum corresponding to a relative air mass of 1.5 G and the PC-ID software. The quantum efficiency of these cells was also measured. An important ratio of losses is localized in the emitters with a low resistance (40 Omega/ ). To decrease the Auger recombination in these emitters we have changed the phosphorous diffusion condition in the furnace in order to obtain shallower and low doping emitters (80 Omega/ ). A new paste for fingers and a metallization procedure were also developing. These new cells present an improvement in its efficiency of 3.5%.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134136462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Automated characterisation system for liquid crystal displays 液晶显示器自动表征系统
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384057
M. Geday, X. Quintana, N. Bennis, B. Cerrolaza, D. Pérez-Medialdea, J. Otón
{"title":"Automated characterisation system for liquid crystal displays","authors":"M. Geday, X. Quintana, N. Bennis, B. Cerrolaza, D. Pérez-Medialdea, J. Otón","doi":"10.1109/SCED.2007.384057","DOIUrl":"https://doi.org/10.1109/SCED.2007.384057","url":null,"abstract":"A complete program suite for the automated characterisation of liquid crystal displays (LCDs) has been developed in the Lab View 7.1 environment. It includes routines for basic electro-optical characterisation, i.e. generation of transmission-voltage curves applying triangular waveforms while measuring the switching voltages. And it provides an easily accessible interface for design of arbitrary waveforms, both for active matrix addressing (often necessary in nematic LCDs) and for passive matrix addressing (applicable to ferro-and antiferro-electric LCDs as well as some nematic LCDs). The software includes automated methods for generation of dynamic grey scales, for measurement of grey-grey transition times and for analysis of image sticking.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"73 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130367864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Influence of gate geometry in integrated MOS varactors on accumulation mode for RF 集成MOS变容管栅极几何形状对射频累积模式的影响
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383997
E. Amselem, B. González, J. García, I. Aldea, M. Marrero, A. Iturri, J. del Pino, S. Khemchandani, A. Hernández
{"title":"Influence of gate geometry in integrated MOS varactors on accumulation mode for RF","authors":"E. Amselem, B. González, J. García, I. Aldea, M. Marrero, A. Iturri, J. del Pino, S. Khemchandani, A. Hernández","doi":"10.1109/SCED.2007.383997","DOIUrl":"https://doi.org/10.1109/SCED.2007.383997","url":null,"abstract":"Driven by the many applications that varactors have in RF integrated blocks, this work analyzes the influence of gate geometry (width and length) on integrated accumulation MOS varactors. For this purpose, a number of varactors have been designed and fabricated on a 0.8 mum CMOS standard technology. The most relevant parameters: quality factor, tuning range, and capacitance, are simulated and compared against measurements. Some design considerations are reported.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130379086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Towards more complex shapes of macroporous silicon 向着更复杂形状的大孔硅方向发展
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383984
T. Trifonov, M. Garín, A. Rodríguez, L. Marsal, J. Pallarès, R. Alcubilla
{"title":"Towards more complex shapes of macroporous silicon","authors":"T. Trifonov, M. Garín, A. Rodríguez, L. Marsal, J. Pallarès, R. Alcubilla","doi":"10.1109/SCED.2007.383984","DOIUrl":"https://doi.org/10.1109/SCED.2007.383984","url":null,"abstract":"Macroporous silicon membranes, prepared by electrochemical etching, were subjected to pore widening performed either by multiple oxidation/oxide-removal cycles or by anisotropic etching in alkaline solutions. While multiple oxidations are used to obtain perfect cylindrical pores, the alkaline etching allows the fabrication of macropores with square and also, eight-sided (octagonal) cross-section. The shown post-etching treatment of macroporous silicon extends the possibilities of the electrochemical etching technique and enables the realization of 2D and 3D photonic structures with very complex geometries.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128789748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Modal suppression and single-mode emission in photonic crystal coupled-cavity ring-like lasers 光子晶体耦合腔环形激光器的模态抑制和单模发射
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384043
L. Martínez, A. R. Alija, C. Seassal, P. Viktorovitch, P. Postigo
{"title":"Modal suppression and single-mode emission in photonic crystal coupled-cavity ring-like lasers","authors":"L. Martínez, A. R. Alija, C. Seassal, P. Viktorovitch, P. Postigo","doi":"10.1109/SCED.2007.384043","DOIUrl":"https://doi.org/10.1109/SCED.2007.384043","url":null,"abstract":"We have designed and fabricated a new class of photonic crystal ring-like laser structure with hexagonal shape on InGaAsP/InP semiconductor slabs by introducing nanocavities in the corners of the hexagonal ring. Different structures have been designed and fabricated by shifting the position of the nanocavity by one lattice parameter around the corners. Laser emission has been measured and characterized. The global effect of the introduction of an H1 cavity located in the six corners of a hexagonal waveguide ring-like resonator promotes a strong modal suppression compared to the ring structure without cavities. The introduction of the nanocavities reduces the many modes of the regular hexagonal ring-like structure, as finite element calculations show. Ring-like structures without cavities show multimode spectra while structures with cavities present strong mode reduction in the studied range. For a specific design of the structures with the cavities inside the hexagon area a clearly single mode emission is observed with a side mode suppression ratio higher than 20 dB.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130293066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy 用电容瞬态光谱表征GaInNAs pn结中的杂质
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384012
J. Tejada, M. Deen, P. L. Bullejos, J. Villanueva, F. Gómez-Campos, S. Rodríguez-Bolívar
{"title":"Characterization of impurities in GaInNAs pn junctions from capacitance transient spectroscopy","authors":"J. Tejada, M. Deen, P. L. Bullejos, J. Villanueva, F. Gómez-Campos, S. Rodríguez-Bolívar","doi":"10.1109/SCED.2007.384012","DOIUrl":"https://doi.org/10.1109/SCED.2007.384012","url":null,"abstract":"Difficulties and their solutions found during the determination of parameters of impurities in thin GalnNAs solar cells, by means of spectroscopic capacitance measurements, are presented in this work. The parameters of impurities present in the GalnNAs pn junctions are determined by an iterative method, comparing experimental capacitance transients with calculated ones. The results disagree with the ones obtained by applying the classical expressions associated to the capacitance deep level transient spectroscopy (DLTS). The parameters of the centers are used to determine the hole diffusion lengths in the semiconductor. The agreement between the hole diffusion lengths obtained with our method and results found in literature means that DLTS must be used with care when determining recombination centers in thin pn junctions. An expression to be included in the DLTS technique, that incorporates these effects, is proposed.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129064258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reduction of thermal load in the fabrication process of bifacial silicon solar cells 降低双面硅太阳能电池制造过程中的热负荷
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384053
J. Coello, C. del Cañizo, A. Luque
{"title":"Reduction of thermal load in the fabrication process of bifacial silicon solar cells","authors":"J. Coello, C. del Cañizo, A. Luque","doi":"10.1109/SCED.2007.384053","DOIUrl":"https://doi.org/10.1109/SCED.2007.384053","url":null,"abstract":"With the aim of reducing the thermal load to obtain higher final bulk lifetimes, a new scheme for the fabrication of bifacial solar cells is proposed, in which masking thermal oxidations are replaced by SiN layer depositions. High final bulk lifetimes have been obtained thanks to the thermal load reduction, improving cell efficiencies. The process with SiN layers gives 14.6% when illuminated from the p+ side and 13.3% when illuminated from the n+ side for multicrystalline silicon of n-type,, and 16.2% and 16.7% when illuminated from p+ and n+ sides, respectively, for Cz-n silicon.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127836530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling Germanium p-n Junctions for Multi-junction Solar Cell Applications 多结太阳能电池中锗p-n结的建模
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384002
P. Espinet, I. Rey‐Stolle, B. Galiana, M. Baudrit, C. Algora
{"title":"Modeling Germanium p-n Junctions for Multi-junction Solar Cell Applications","authors":"P. Espinet, I. Rey‐Stolle, B. Galiana, M. Baudrit, C. Algora","doi":"10.1109/SCED.2007.384002","DOIUrl":"https://doi.org/10.1109/SCED.2007.384002","url":null,"abstract":"An efficient germanium cell is a key element for attaining high efficiency in state-of-the-art triple junction solar cells. This work summarizes our efforts in the field of modeling of the quantum efficiency of germanium p/n junctions for photovoltaic applications. An analytic tool is presented and the most relevant parameters are discussed and modeled. Finally, some hints for the optimum design of germanium solar cells are deduced form the simulations.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122967983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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