A. Goñi, J. del Pino, J. García, B. González, S. Khemchandani, A. Hernández
{"title":"A Physical-based Method for Parameter Extraction of On-Chip Spiral Inductor","authors":"A. Goñi, J. del Pino, J. García, B. González, S. Khemchandani, A. Hernández","doi":"10.1109/SCED.2007.384068","DOIUrl":null,"url":null,"abstract":"In this work, a new comprehensive method to extract the inductor equivalent model parameters is developed. Frequency-dependent expressions for the model components are obtained from the simplification of the pi-model Y-parameter equations. By analyzing the influence of the components value on the inductor quality factor and inductance, the frequencies at which the parameters will be evaluated are selected. The method has been validated by comparison with measurements of inductors fabricated in a 0.35 mum process. Results show a good agreement over a broad-band frequency up to 10 GHz.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SCED.2007.384068","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this work, a new comprehensive method to extract the inductor equivalent model parameters is developed. Frequency-dependent expressions for the model components are obtained from the simplification of the pi-model Y-parameter equations. By analyzing the influence of the components value on the inductor quality factor and inductance, the frequencies at which the parameters will be evaluated are selected. The method has been validated by comparison with measurements of inductors fabricated in a 0.35 mum process. Results show a good agreement over a broad-band frequency up to 10 GHz.