基于AlN薄膜的MEMS压电驱动

S. González-Castilla, J. Malo, L. Vergara, J. Olivares, M. Clement, J. Ignacio Izpura, J. Sangrador, E. Iborra
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引用次数: 1

摘要

我们分析了双钳位微桥压电驱动的机械响应,使用溅射AlN,首先作为致动器,然后作为谐振器。测量了微桥在直流电激励下的准静态响应。可获得高达0.22 μ m/V的面外位移,提供适合射频开关应用的驱动响应。另一方面,用激光干涉测量法测定了微桥的谐振频率。我们比较了不同尺寸和不同初始屈曲(由层的残余应力引起)的微桥的响应。我们表明,在微桥的制造过程中,通过允许一定数量的内置应力,可以对谐振频率进行粗略的调谐。对于给定的谐振器,在交流激励信号上加上直流偏置可以微调谐振频率。我们的微桥在500微米长的微桥上产生约88 Hz/V的调谐因子。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
MEMS Actuated Piezoelectrically with AlN Films
We analyse the mechanical response of a doubly-clamped microbridge actuated piezoelectrically using sputtered AlN, working first as an actuator and then as a resonator. The quasi-static response of the microbridge under DC electrical excitation is measured. Out-of-plane displacements as high as 0.22 mum/V are obtained, which provides an actuation response suitable for RF switching applications. On the other hand, the resonance frequencies of the microbridges are determined by means of laser interferometry. We compare the response of microbridges with different dimensions and different initial buckling (induced by the residual stress of the layers). We show that it is possible to perform a rough tuning of the resonance frequencies by allowing a determined amount of built-in stress in the microbridge during its fabrication. For a given resonator, a DC bias added to the AC excitation signal allows to fine-tune the resonance frequencies. Our microbridges yield a tuning factor of around 88 Hz/V for a 500 mum-long microbridge.
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