ARXPS characterization of InGaP/GaAs heterointerface grown by MOVPE

Abstract

This paper studies the chemical composition of the hetereointerface of the semiconductors InGaP/GaAs, grown by metal organic vapor phase epitaxy (MOVPE), by means of X-ray Photoelectrons Spectroscopy (XPS) by two methods: conventional XPS with Ar+ sputtering and by angle resolved XPS (ARXPS). Firstly, from the corrected Auger parameter for different angles, we have determined the depth of the Ga oxide in the superficial GaAs layer by environmental contamination and we have studied its influence in the interface. The thickness of Ga2O3 is only of some Armstrong and it no presents an important influence in the interface.