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A Silicon-Based Direct Methanol Micro Fuel Cell 硅基直接甲醇微型燃料电池
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384021
J. Esquivel, N. Sabaté, J. Santander, N. Torres, I. Gràcia, L. Fonseca, P. Ivanov, C. Cané
{"title":"A Silicon-Based Direct Methanol Micro Fuel Cell","authors":"J. Esquivel, N. Sabaté, J. Santander, N. Torres, I. Gràcia, L. Fonseca, P. Ivanov, C. Cané","doi":"10.1109/SCED.2007.384021","DOIUrl":"https://doi.org/10.1109/SCED.2007.384021","url":null,"abstract":"Fabrication and characterization of a silicon microfabricated direct methanol fuel cell (muDMFC) is reported The main characteristics of the device are its capability to work without complex pumping systems, only by capillary pressure, and the fact that its performance is not affected by the device orientation. A simple fabrication process, based in DRIE (deep reactive ion etching), allows to obtain a reliable and low-cost final device. The device consists of two silicon microfabricated plates mounted together with a commercial membrane electrode assembly (MEA). Voltage-current (V-I) and power-current (P-I) curves of the device at different methanol concentration and at different fuel cell orientation have been obtained A maximum power density of 2.65 mW/cm2 was obtained with a methanol concentration of 2M. It has been also seen that the change in orientation supposes only a 10% variation in the maximum power density. The results obtained in this work demonstrate the feasibility of the device and give a guideline for design and conditions optimization.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126442716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monte Carlo Comparison Between InAlAs/InGaAS Double-Gate and Standard HEMTs InAlAs/InGaAS双栅与标准hemt的蒙特卡罗比较
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383958
B. G. Vasallo, T. González, D. Pardo, J. Mateos, N. Wichmann, S. Bollaert, A. Cappy
{"title":"Monte Carlo Comparison Between InAlAs/InGaAS Double-Gate and Standard HEMTs","authors":"B. G. Vasallo, T. González, D. Pardo, J. Mateos, N. Wichmann, S. Bollaert, A. Cappy","doi":"10.1109/SCED.2007.383958","DOIUrl":"https://doi.org/10.1109/SCED.2007.383958","url":null,"abstract":"An ensemble 2D Monte Carlo simulator is employed to analyze the static and dynamic performance of InAlAs/ InGaAs double-gate high electron mobility transistors (DG-HEMTs) by comparing them with standard single-gate (SG) ones. Different gate length devices are analyzed in order to check the attenuation of short-channel effects expected in the DG-structures. The transconductance g<sub>m</sub> and the output conductance g<sub>d</sub> are confirmed to be improved by the DG-geometry. As well, the higher values of the figure of merit g<sub>m</sub> / g<sub>d</sub> jointly with the lower value of the gate resistance R<sub>g</sub> lead to an improvement of the extrinsic frequency performance (f<sub>max</sub> and f<sub>t</sub>).","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"93 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134427265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Effect of RF and MW Power on the SiNx Films Grown by PECVD RF和MW功率对PECVD生长SiNx薄膜的影响
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383989
S. Ponce-Alcántara, C. del Cañizo, J. Hofstetter, A. Luque
{"title":"The Effect of RF and MW Power on the SiNx Films Grown by PECVD","authors":"S. Ponce-Alcántara, C. del Cañizo, J. Hofstetter, A. Luque","doi":"10.1109/SCED.2007.383989","DOIUrl":"https://doi.org/10.1109/SCED.2007.383989","url":null,"abstract":"The deposition of silicon nitride (SiNx) films by PECVD is widely used for silicon solar cell manufacturing due to its potential for low surface recombination, high bulk passivation and good anti-reflection coating properties. Some experiments have been carried out in our lab in order to optimise the deposition conditions. The RF and MW power, responsible of the silane and ammonia dissociation, are going to be examined carefully in order to achieve the best SiNx passivation layer. Improvements between 120% and 232% for the effective lifetime and 112% and 183% for the bulk lifetime (after an annealing step) have been reached after the RF power optimization. In the same way, improvements between 182% and 234% for the effective lifetime and 167% and 250% for the bulk lifetime (after an annealing step) have been reached after the MW power optimization. These results show the potential of this kind of passivation layers.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123868146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Quantum corrected EMC simulation of ultrashort DGSOI devices. Ballistic vs. Diffusive regime 超短DGSOI器件的量子校正电磁兼容仿真。弹道vs扩散体制
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384000
C. Sampedro, F. Gámiz, A. Godoy, L. Donetti, F. Ruiz
{"title":"Quantum corrected EMC simulation of ultrashort DGSOI devices. Ballistic vs. Diffusive regime","authors":"C. Sampedro, F. Gámiz, A. Godoy, L. Donetti, F. Ruiz","doi":"10.1109/SCED.2007.384000","DOIUrl":"https://doi.org/10.1109/SCED.2007.384000","url":null,"abstract":"In this work a quantum corrected Ensemble Monte Carlo (Q-EMC) is employed to study ballistic and diffusive transport in ultrashort double gate SOI devices (DGSOI). The multi-valley effective conduction band edge (MV-ECBE) method has been used to include quantum effects. Different aggressively scaled devices have been used as benchmark structures. The simulations show that even for a 10 nm channel length device, the scattering can not be neglected. It is also shown a decreased in the number of the scattering events in the channel when the drain to source voltage is increased. As a consequence, the behaviour of the device can be considered as quasi-ballistic for high lateral field regime.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115936643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrodeposited CuIn(S, Se)2 films for low cost high efficiency solar cell applications: microstructural analysis 低成本高效太阳能电池用电沉积CuIn(S, Se)2薄膜:显微结构分析
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384014
V. Izquierdo‐Roca, J. Álvarez-García, A. Pérez‐Rodríguez, L. Calvo‐Barrio, A. Romano-Rodríguez, J. Morante, O. Ramdani, V. Bermudez, P. Grand, L. Parissi, O. Kerrec
{"title":"Electrodeposited CuIn(S, Se)2 films for low cost high efficiency solar cell applications: microstructural analysis","authors":"V. Izquierdo‐Roca, J. Álvarez-García, A. Pérez‐Rodríguez, L. Calvo‐Barrio, A. Romano-Rodríguez, J. Morante, O. Ramdani, V. Bermudez, P. Grand, L. Parissi, O. Kerrec","doi":"10.1109/SCED.2007.384014","DOIUrl":"https://doi.org/10.1109/SCED.2007.384014","url":null,"abstract":"This paper describes the detailed microstructral characterisation of S-rich CuIn(S,Se)2 absorbers fabricated by single step electrodeposition (ED) of nanocrystalline CuInSe2 precursors followed by rapid thermal annealing under sulphurising conditions. This has allowed identifying the main secondary phases in the precursors as elemental Se, CuSe and Cu2Se. The Raman spectra from these precursors also show the presence of Cu-poor OVC domains, which contrasts with the Cu-rich conditions used in the ED growth. This has been related to the presence in the annealed layers of In rich secondary phases, which lead to a slightly Cu poor composition. Moreover, the used sulphurising conditions also lead to the formation of a relatively thick MoS2 layer between the absorber and the Mo back contact. The high microcrystalline quality of the layers is likely responsible of the relatively high efficiency value of 11% of the solar cells fabricated with these absorbers.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127422152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 4k projection display for D-cinema, medical imaging and simulation 4k投影显示器，用于d电影，医学成像和模拟
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384046
J. Otón, X. Quintana, M. Geday, N. Bennis, G. V. Van Doorselaer, M. Vermandel, B. Meerschman, A. Van Calster, H. De Smet, D. Cuypers, T. Podprocky, K.H. Kraft, S. Hausser, R. Dabrowski, P. Kula, B. Maximus, K. Van Belle, P. Scarfield, K. Murray, M. Barton, G. Blackham
{"title":"A 4k projection display for D-cinema, medical imaging and simulation","authors":"J. Otón, X. Quintana, M. Geday, N. Bennis, G. V. Van Doorselaer, M. Vermandel, B. Meerschman, A. Van Calster, H. De Smet, D. Cuypers, T. Podprocky, K.H. Kraft, S. Hausser, R. Dabrowski, P. Kula, B. Maximus, K. Van Belle, P. Scarfield, K. Murray, M. Barton, G. Blackham","doi":"10.1109/SCED.2007.384046","DOIUrl":"https://doi.org/10.1109/SCED.2007.384046","url":null,"abstract":"Liquid crystal on silicon (LCOS) combines two very well-known technologies, namely the IC/CMOS and the liquid crystal (LC) technologies. As both of these are very mature, it is obvious that LCOS has a huge potential for very high-end applications, more than any other (projection) technology. The aim of the FORK project is the development of a LCOS microdisplay device for very diverse applications in simulation, medical imaging, control rooms and digital cinema. These applications require or benefit from very high pixel counts, high contrast ratio's, very high light fluxes and very good colour and brightness uniformity, analog pixel addressing and high response times. A few microdisplay devices have recently been marketed for the applications mentioned above although none of these devices which meet all of these criteria.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128540081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Novel lithographic technology for OLED-based display manufacturing 基于oled显示器制造的新型光刻技术
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384054
B. Arredondo, Beatriz Romero, Xabier Quintana, A. Gutiérrez–Llorente, Á. L. Álvarez, Ricardo Mallavia, J. Otón
{"title":"Novel lithographic technology for OLED-based display manufacturing","authors":"B. Arredondo, Beatriz Romero, Xabier Quintana, A. Gutiérrez–Llorente, Á. L. Álvarez, Ricardo Mallavia, J. Otón","doi":"10.1109/SCED.2007.384054","DOIUrl":"https://doi.org/10.1109/SCED.2007.384054","url":null,"abstract":"Common cathode organic electroluminescent diode matrices, based on a new CN-derivative of poly(2,7-fluorene phenylidene) have been developed by photolithography. Optical characterization reveals their interesting properties as white-light emitters. In addition, 7times5 pixel alphanumeric display prototypes have been manufactured using a novel lithographic technique that saves processing steps and costs.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131519179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
New Explicit Charge and Capacitance Models for Undoped Surrounding Gate MOSFETs 未掺杂环栅mosfet的显式电荷和电容新模型
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384009
O. Moldovan, B. Iñíguez, D. Jiménez, J. Roig
{"title":"New Explicit Charge and Capacitance Models for Undoped Surrounding Gate MOSFETs","authors":"O. Moldovan, B. Iñíguez, D. Jiménez, J. Roig","doi":"10.1109/SCED.2007.384009","DOIUrl":"https://doi.org/10.1109/SCED.2007.384009","url":null,"abstract":"We present an analytical and continuous charge model for cylindrical undoped surrounding gate (SGT) MOSFETs, from which analytical expressions of all total capacitances are obtained. The model is based on a unified charge control model derived from Poisson's equation. The drain current, charge and capacitances are written as continuous explicit functions of the applied voltages. The calculated capacitance characteristics show an excellent agreement with 3D numerical device simulations.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131801301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photovoltaic Mini-modules Using Silicon on Insulator Technology 利用硅绝缘体技术的光伏微型组件
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384049
P. Ortega, S. Bermejo, M. Vetter, L. Castañer
{"title":"Photovoltaic Mini-modules Using Silicon on Insulator Technology","authors":"P. Ortega, S. Bermejo, M. Vetter, L. Castañer","doi":"10.1109/SCED.2007.384049","DOIUrl":"https://doi.org/10.1109/SCED.2007.384049","url":null,"abstract":"This work shows the design, fabrication process, and characterization of photovoltaic c-Si mini-modules using Silicon on Insulator technology. Arrays consist of a monolithically series connection of small area photovoltaic cells (<1 mm2), and they are fabricated in a common substrate (active layer) of very thin thickness (~10 mum). Isolation between cells is performed by means of anisotropic etching of the active layer, and mechanical stability is done thanks to a handle wafer joined with the active layer trough a buried oxide. First results, using standard solar light (AM1.5 100 mW/cm2), confirm the viability of this technology to fabricate small area arrays, yielding single cell open circuit voltages Voc's about 0.55 V and photocurrent current densities around 21.3 mA/cm2. Series connection is also demonstrated increasing Voc from 0.55 V to 5.1 V when 9 cells are connected in series.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134471508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dimension-Scaling of Microcantilevers Resonators 微悬臂谐振器的尺寸缩放
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384028
M. Narducci, E. Figueras, I. Gràcia, L. Fonseca, J. Santander, C. Cané
{"title":"Dimension-Scaling of Microcantilevers Resonators","authors":"M. Narducci, E. Figueras, I. Gràcia, L. Fonseca, J. Santander, C. Cané","doi":"10.1109/SCED.2007.384028","DOIUrl":"https://doi.org/10.1109/SCED.2007.384028","url":null,"abstract":"In order to analyze the influence of the dimension-scaling on the sensitivity of a cantilever, a set of microcantilevers resonators were designed, fabricated and subsequently scaled. The cantilevers proposed are piezoelectrically actuated and the movement detection is done by four piezoresistors in a Wheatstone bridge configuration. As expected the experimental results show improvement of the resonance frequency and quality factor with the dimension-scaling. For example, an structure with dimensions in the range of 400x300mum2 show the first mode of resonance frequency about 98 kHz and the quality factor around 680 and for this structure scaled with dimensions in the range of 200x150mum2 the resonance frequency and the quality factor was 354 kHz and 950 respectively.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134121661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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