利用硅绝缘体技术的光伏微型组件

P. Ortega, S. Bermejo, M. Vetter, L. Castañer
{"title":"利用硅绝缘体技术的光伏微型组件","authors":"P. Ortega, S. Bermejo, M. Vetter, L. Castañer","doi":"10.1109/SCED.2007.384049","DOIUrl":null,"url":null,"abstract":"This work shows the design, fabrication process, and characterization of photovoltaic c-Si mini-modules using Silicon on Insulator technology. Arrays consist of a monolithically series connection of small area photovoltaic cells (<1 mm2), and they are fabricated in a common substrate (active layer) of very thin thickness (~10 mum). Isolation between cells is performed by means of anisotropic etching of the active layer, and mechanical stability is done thanks to a handle wafer joined with the active layer trough a buried oxide. First results, using standard solar light (AM1.5 100 mW/cm2), confirm the viability of this technology to fabricate small area arrays, yielding single cell open circuit voltages Voc's about 0.55 V and photocurrent current densities around 21.3 mA/cm2. Series connection is also demonstrated increasing Voc from 0.55 V to 5.1 V when 9 cells are connected in series.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photovoltaic Mini-modules Using Silicon on Insulator Technology\",\"authors\":\"P. Ortega, S. Bermejo, M. Vetter, L. Castañer\",\"doi\":\"10.1109/SCED.2007.384049\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work shows the design, fabrication process, and characterization of photovoltaic c-Si mini-modules using Silicon on Insulator technology. Arrays consist of a monolithically series connection of small area photovoltaic cells (<1 mm2), and they are fabricated in a common substrate (active layer) of very thin thickness (~10 mum). Isolation between cells is performed by means of anisotropic etching of the active layer, and mechanical stability is done thanks to a handle wafer joined with the active layer trough a buried oxide. First results, using standard solar light (AM1.5 100 mW/cm2), confirm the viability of this technology to fabricate small area arrays, yielding single cell open circuit voltages Voc's about 0.55 V and photocurrent current densities around 21.3 mA/cm2. Series connection is also demonstrated increasing Voc from 0.55 V to 5.1 V when 9 cells are connected in series.\",\"PeriodicalId\":108254,\"journal\":{\"name\":\"2007 Spanish Conference on Electron Devices\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-07-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Spanish Conference on Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SCED.2007.384049\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SCED.2007.384049","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

这项工作展示了使用绝缘体上硅技术的光伏c-Si微型模块的设计、制造过程和表征。阵列由小面积光伏电池(<1 mm2)的单片串联连接组成,并且它们是在厚度非常薄(~10 μ m)的公共衬底(有源层)上制造的。通过活性层的各向异性蚀刻来实现细胞之间的隔离,并且由于通过埋藏氧化物与活性层连接的手柄晶圆,实现了机械稳定性。第一个结果是,使用标准太阳能光(AM1.5 100 mW/cm2),证实了该技术制造小面积阵列的可行性,产生的单电池开路电压Voc约为0.55 V,光电流密度约为21.3 mA/cm2。串联连接也证明了增加Voc从0.55 V到5.1 V,当9个电池串联连接。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Photovoltaic Mini-modules Using Silicon on Insulator Technology
This work shows the design, fabrication process, and characterization of photovoltaic c-Si mini-modules using Silicon on Insulator technology. Arrays consist of a monolithically series connection of small area photovoltaic cells (<1 mm2), and they are fabricated in a common substrate (active layer) of very thin thickness (~10 mum). Isolation between cells is performed by means of anisotropic etching of the active layer, and mechanical stability is done thanks to a handle wafer joined with the active layer trough a buried oxide. First results, using standard solar light (AM1.5 100 mW/cm2), confirm the viability of this technology to fabricate small area arrays, yielding single cell open circuit voltages Voc's about 0.55 V and photocurrent current densities around 21.3 mA/cm2. Series connection is also demonstrated increasing Voc from 0.55 V to 5.1 V when 9 cells are connected in series.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信