B. G. Vasallo, T. González, D. Pardo, J. Mateos, N. Wichmann, S. Bollaert, A. Cappy
{"title":"InAlAs/InGaAS双栅与标准hemt的蒙特卡罗比较","authors":"B. G. Vasallo, T. González, D. Pardo, J. Mateos, N. Wichmann, S. Bollaert, A. Cappy","doi":"10.1109/SCED.2007.383958","DOIUrl":null,"url":null,"abstract":"An ensemble 2D Monte Carlo simulator is employed to analyze the static and dynamic performance of InAlAs/ InGaAs double-gate high electron mobility transistors (DG-HEMTs) by comparing them with standard single-gate (SG) ones. Different gate length devices are analyzed in order to check the attenuation of short-channel effects expected in the DG-structures. The transconductance g<sub>m</sub> and the output conductance g<sub>d</sub> are confirmed to be improved by the DG-geometry. As well, the higher values of the figure of merit g<sub>m</sub> / g<sub>d</sub> jointly with the lower value of the gate resistance R<sub>g</sub> lead to an improvement of the extrinsic frequency performance (f<sub>max</sub> and f<sub>t</sub>).","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"93 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monte Carlo Comparison Between InAlAs/InGaAS Double-Gate and Standard HEMTs\",\"authors\":\"B. G. Vasallo, T. González, D. Pardo, J. Mateos, N. Wichmann, S. Bollaert, A. Cappy\",\"doi\":\"10.1109/SCED.2007.383958\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An ensemble 2D Monte Carlo simulator is employed to analyze the static and dynamic performance of InAlAs/ InGaAs double-gate high electron mobility transistors (DG-HEMTs) by comparing them with standard single-gate (SG) ones. Different gate length devices are analyzed in order to check the attenuation of short-channel effects expected in the DG-structures. The transconductance g<sub>m</sub> and the output conductance g<sub>d</sub> are confirmed to be improved by the DG-geometry. As well, the higher values of the figure of merit g<sub>m</sub> / g<sub>d</sub> jointly with the lower value of the gate resistance R<sub>g</sub> lead to an improvement of the extrinsic frequency performance (f<sub>max</sub> and f<sub>t</sub>).\",\"PeriodicalId\":108254,\"journal\":{\"name\":\"2007 Spanish Conference on Electron Devices\",\"volume\":\"93 4\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-07-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Spanish Conference on Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SCED.2007.383958\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SCED.2007.383958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monte Carlo Comparison Between InAlAs/InGaAS Double-Gate and Standard HEMTs
An ensemble 2D Monte Carlo simulator is employed to analyze the static and dynamic performance of InAlAs/ InGaAs double-gate high electron mobility transistors (DG-HEMTs) by comparing them with standard single-gate (SG) ones. Different gate length devices are analyzed in order to check the attenuation of short-channel effects expected in the DG-structures. The transconductance gm and the output conductance gd are confirmed to be improved by the DG-geometry. As well, the higher values of the figure of merit gm / gd jointly with the lower value of the gate resistance Rg lead to an improvement of the extrinsic frequency performance (fmax and ft).
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