{"title":"未掺杂环栅mosfet的显式电荷和电容新模型","authors":"O. Moldovan, B. Iñíguez, D. Jiménez, J. Roig","doi":"10.1109/SCED.2007.384009","DOIUrl":null,"url":null,"abstract":"We present an analytical and continuous charge model for cylindrical undoped surrounding gate (SGT) MOSFETs, from which analytical expressions of all total capacitances are obtained. The model is based on a unified charge control model derived from Poisson's equation. The drain current, charge and capacitances are written as continuous explicit functions of the applied voltages. The calculated capacitance characteristics show an excellent agreement with 3D numerical device simulations.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"87 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"New Explicit Charge and Capacitance Models for Undoped Surrounding Gate MOSFETs\",\"authors\":\"O. Moldovan, B. Iñíguez, D. Jiménez, J. Roig\",\"doi\":\"10.1109/SCED.2007.384009\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present an analytical and continuous charge model for cylindrical undoped surrounding gate (SGT) MOSFETs, from which analytical expressions of all total capacitances are obtained. The model is based on a unified charge control model derived from Poisson's equation. The drain current, charge and capacitances are written as continuous explicit functions of the applied voltages. The calculated capacitance characteristics show an excellent agreement with 3D numerical device simulations.\",\"PeriodicalId\":108254,\"journal\":{\"name\":\"2007 Spanish Conference on Electron Devices\",\"volume\":\"87 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-07-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Spanish Conference on Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SCED.2007.384009\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SCED.2007.384009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New Explicit Charge and Capacitance Models for Undoped Surrounding Gate MOSFETs
We present an analytical and continuous charge model for cylindrical undoped surrounding gate (SGT) MOSFETs, from which analytical expressions of all total capacitances are obtained. The model is based on a unified charge control model derived from Poisson's equation. The drain current, charge and capacitances are written as continuous explicit functions of the applied voltages. The calculated capacitance characteristics show an excellent agreement with 3D numerical device simulations.
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