{"title":"Photovoltaic Mini-modules Using Silicon on Insulator Technology","authors":"P. Ortega, S. Bermejo, M. Vetter, L. Castañer","doi":"10.1109/SCED.2007.384049","DOIUrl":null,"url":null,"abstract":"This work shows the design, fabrication process, and characterization of photovoltaic c-Si mini-modules using Silicon on Insulator technology. Arrays consist of a monolithically series connection of small area photovoltaic cells (<1 mm2), and they are fabricated in a common substrate (active layer) of very thin thickness (~10 mum). Isolation between cells is performed by means of anisotropic etching of the active layer, and mechanical stability is done thanks to a handle wafer joined with the active layer trough a buried oxide. First results, using standard solar light (AM1.5 100 mW/cm2), confirm the viability of this technology to fabricate small area arrays, yielding single cell open circuit voltages Voc's about 0.55 V and photocurrent current densities around 21.3 mA/cm2. Series connection is also demonstrated increasing Voc from 0.55 V to 5.1 V when 9 cells are connected in series.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SCED.2007.384049","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work shows the design, fabrication process, and characterization of photovoltaic c-Si mini-modules using Silicon on Insulator technology. Arrays consist of a monolithically series connection of small area photovoltaic cells (<1 mm2), and they are fabricated in a common substrate (active layer) of very thin thickness (~10 mum). Isolation between cells is performed by means of anisotropic etching of the active layer, and mechanical stability is done thanks to a handle wafer joined with the active layer trough a buried oxide. First results, using standard solar light (AM1.5 100 mW/cm2), confirm the viability of this technology to fabricate small area arrays, yielding single cell open circuit voltages Voc's about 0.55 V and photocurrent current densities around 21.3 mA/cm2. Series connection is also demonstrated increasing Voc from 0.55 V to 5.1 V when 9 cells are connected in series.