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2007 Spanish Conference on Electron Devices最新文献

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Electroluminescence from C- and Si- rich silicon oxides in continuous wave and pulsed excitation 富碳和富硅硅氧化物在连续波和脉冲激发下的电致发光
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383982
O. Jambois, A. Pérez‐Rodríguez, P. Pellegrino, J. Carreras, M. Peralvarez, C. Bonafos, S. Schamm, G. Benassayag, V. Paillard, M. Perego, B. Garrido
{"title":"Electroluminescence from C- and Si- rich silicon oxides in continuous wave and pulsed excitation","authors":"O. Jambois, A. Pérez‐Rodríguez, P. Pellegrino, J. Carreras, M. Peralvarez, C. Bonafos, S. Schamm, G. Benassayag, V. Paillard, M. Perego, B. Garrido","doi":"10.1109/SCED.2007.383982","DOIUrl":"https://doi.org/10.1109/SCED.2007.383982","url":null,"abstract":"This work reports the electroluminescence from carbon-and silicon-rich silicon oxide layers under continuous wave and pulsed excitation. The films were fabricated by Si and C ion implantation at low energy in 40 nm thick SiO2, followed by annealing at 1100degC. In continuous wave excitation, white electroluminescence has been observed. Structural and optical studies allow assigning it to Si nanocrystals for the red part of the spectrum, and to C-related centers for the blue and green components. The external efficiency has been estimated to 10-4%. Electrical characteristics show a Fowler-Nordheim behavior for voltages above 25 V, equal to the onset of electroluminescence. This suggests that light emission is related to the impact ionization of radiative centers. In pulsed excitation, electroluminescence has been observed for a voltage of less than 10 V. It is shown that the C-rich centers are not involved in this process, but a solution to obtain their excitation is proposed.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126787117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiGe Bipolar Transistors for Harsh Radiation Environments 用于恶劣辐射环境的SiGe双极晶体管
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384016
S. Díez, M. Ullán, F. Campabadal, M. Lozano, G. Pellegrini, D. Knoll
{"title":"SiGe Bipolar Transistors for Harsh Radiation Environments","authors":"S. Díez, M. Ullán, F. Campabadal, M. Lozano, G. Pellegrini, D. Knoll","doi":"10.1109/SCED.2007.384016","DOIUrl":"https://doi.org/10.1109/SCED.2007.384016","url":null,"abstract":"We have performed radiation hardness studies over three different SiGe HBT technologies from IHP (Innovation for High Performance Microelectronics). We have studied gamma and neutron irradiations to study separately ionization and displacement effects. The specific application for which these technologies are being evaluated is the front-end readout electronics of the detector modules of the future ATLAS upgrade for the Super-LHC, but space-oriented applications are also considered. It can be seen from the results strong gain degradations for the highest doses and fluencies, and an indication of damage saturation in some cases. Only small differences can be observed among the three different technologies with respect to their radiation hardness.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132503560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Two-dimensional Simulation of Current Self-Distribution in Oxide-Confined Vertical-Cavity Surface-Emitting Lasers 氧化受限垂直腔面发射激光器电流自分布的二维模拟
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384008
J. Arias, L. Borruel, B. Romero, I. Esquivias
{"title":"Two-dimensional Simulation of Current Self-Distribution in Oxide-Confined Vertical-Cavity Surface-Emitting Lasers","authors":"J. Arias, L. Borruel, B. Romero, I. Esquivias","doi":"10.1109/SCED.2007.384008","DOIUrl":"https://doi.org/10.1109/SCED.2007.384008","url":null,"abstract":"We present a two-dimensional static model of vertical-cavity surface-emitting lasers. The model is based on the self-consistent solution of the semiconductor and photon rate equations throughout the entire epitaxial structure in the vertical and lateral directions. A typical top-emitting index-guided structure is simulated and the current self-distribution effect is analyze by plotting the lateral carrier and current density profiles along the active region.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133414957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strained M-plane GaN for polarization-sensitive applications 用于偏振敏感应用的应变m平面GaN
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384039
C. Rivera, P. Misra, J. Pau, E. Muñoz, O. Brandt, H. Grahn, K. Ploog
{"title":"Strained M-plane GaN for polarization-sensitive applications","authors":"C. Rivera, P. Misra, J. Pau, E. Muñoz, O. Brandt, H. Grahn, K. Ploog","doi":"10.1109/SCED.2007.384039","DOIUrl":"https://doi.org/10.1109/SCED.2007.384039","url":null,"abstract":"The realization of polarization-sensitive photodetectors based on strained M-plane GaN is reported. The strain-induced band-structure modification is revisited, emphasizing the effect of anisotropic strain on the optical selection rules. Results show that the polarization sensitivity of these devices in the range of 10 nm can be tuned in the vicinity of the GaN band edge by using films under different strain states. The photodetector characteristics, such as the specific detectivity or the contrast between the detected light polarized perpendicular and parallel to the c-axis and design guidelines to fabricate this particular type of devices, will also be presented. In contrast to conventional semiconductor photodetectors, it is shown that the film thickness dramatically affects the main parameters of these novel devices, namely through the dependence of the valence band splitting and linear dichroism on strain.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131729286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Local growth of carbon nanotubes by thermal chemical vapor deposition from iron based precursor nanoparticles 铁基纳米前驱体热化学气相沉积法局部生长碳纳米管
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384060
I. Martín, G. Rius, G. Gabriel, M. Esplandiu, N. Mestres, F. Pérez-Murano, E. Lora-Tamayo, P. Godignon
{"title":"Local growth of carbon nanotubes by thermal chemical vapor deposition from iron based precursor nanoparticles","authors":"I. Martín, G. Rius, G. Gabriel, M. Esplandiu, N. Mestres, F. Pérez-Murano, E. Lora-Tamayo, P. Godignon","doi":"10.1109/SCED.2007.384060","DOIUrl":"https://doi.org/10.1109/SCED.2007.384060","url":null,"abstract":"We present a study on selective deposition of two types of iron nanoparticles, Fe(NO<sub>3</sub>)<sub>3</sub>ldr9H<sub>2</sub>O and Fe<sub>3</sub>O<sub>4</sub>, for the growth of carbon nanotubes by Rapid Thermal Chemical Vapor Deposition. Selective deposition has been performed by means of an Electron Beam Lithography patterned PMMA mask. CH<sub>4</sub> and H<sub>2</sub> have been employed as process gases for the growth of carbon nanotubes. Catalyst nanoparticles and nanotubes have been characterized by SEM, AFM, and Raman spectroscopy. Results determine that we have grown Single Wall Carbon Nanotubes and small diameter Multi Wall Carbon Nanotubes on the catalyst deposited islands. We have also analyzed the effect of temperature and CH<sub>4</sub>:H<sub>2</sub> ratio in the CVD process and compared our results to previously reported works.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123806075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A Compact Quantum Model of Nanoscale Double-Gate MOSFET for RF and Noise Simulations 用于射频和噪声模拟的纳米级双栅MOSFET的紧凑量子模型
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384067
A. Lázaro, B. Nae, O. Moldovan, B. Iñíguez
{"title":"A Compact Quantum Model of Nanoscale Double-Gate MOSFET for RF and Noise Simulations","authors":"A. Lázaro, B. Nae, O. Moldovan, B. Iñíguez","doi":"10.1109/SCED.2007.384067","DOIUrl":"https://doi.org/10.1109/SCED.2007.384067","url":null,"abstract":"In this paper, we present a new analytical model for RF and microwave noise model of nanoscale double-gate MOSFET. The model is based on a compact model for charge quantization within the channel and it includes overshoot velocity effects. Using the active transmission line method, we calculate the RF and noise performance.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127102009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
NO2 detection with Single Walled Carbon Nanotube Networks 单壁碳纳米管网络检测二氧化氮
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384024
I. Sayago, E. Terrado, M. C. Horrillo, M. Aleixandre, M. Fernández, H. Santos, W. Maser, Ana M. Benito, M.T. Martinez, J. Gutiérrez, E. Muñoz
{"title":"NO2 detection with Single Walled Carbon Nanotube Networks","authors":"I. Sayago, E. Terrado, M. C. Horrillo, M. Aleixandre, M. Fernández, H. Santos, W. Maser, Ana M. Benito, M.T. Martinez, J. Gutiérrez, E. Muñoz","doi":"10.1109/SCED.2007.384024","DOIUrl":"https://doi.org/10.1109/SCED.2007.384024","url":null,"abstract":"Single-walled carbon nanotube (SWNT) networks were tested as gas sensors for nitrogen dioxide detection. Sensor films were fabricated by airbrushing SWNT dispersions on alumina substrates. Sensors were characterized by resistance measurements from 25 to 200degC. The best response to NO2 was obtained at 200degC. The tested SWNT sensors were sensitive to low NO2 concentrations in nitrogen and air atmospheres. Moreover, these sensors provided no response to interfering gases such as H2, NH3, toluene and octane. The effect of thermal treatments on the sensor response was also investigated.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128289579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Monte Carlo analysis of carrier transport from diffusive to ballistic regime in nanometer SOI MOSFETs 纳米SOI mosfet中载流子从扩散到弹道输运的蒙特卡罗分析
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384063
M. Martín, R. Rengel, E. Pascual, T. González
{"title":"Monte Carlo analysis of carrier transport from diffusive to ballistic regime in nanometer SOI MOSFETs","authors":"M. Martín, R. Rengel, E. Pascual, T. González","doi":"10.1109/SCED.2007.384063","DOIUrl":"https://doi.org/10.1109/SCED.2007.384063","url":null,"abstract":"A Monte Carlo investigation of carrier transport in scaled FDSOI MOSFETs is presented, with particular attention to the onset of quasi-ballistic transport. Results show that for gate lengths below 30 nm quasi-ballistic transport becomes dominant, thus noticeably modifying the ideally scaled properties of the transistors. Impurity screening plays an important role on the determination of the electron transit time through the channel, particularly at low drain voltages.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128772886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MOVPE Technology for the Growth of III-V Semiconductor Structures 用于III-V型半导体结构生长的MOVPE技术
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383986
I. García, B. Galiana, I. Rey‐Stolle, C. Algora
{"title":"MOVPE Technology for the Growth of III-V Semiconductor Structures","authors":"I. García, B. Galiana, I. Rey‐Stolle, C. Algora","doi":"10.1109/SCED.2007.383986","DOIUrl":"https://doi.org/10.1109/SCED.2007.383986","url":null,"abstract":"Metal-organic vapour phase epitaxy (MOVPE) is the most widely used technology for the growth of III-V compounds in the industry today, and has become the preferred choice for the mass fabrication of a wide range of devices. The I.E.S -U.P.M acquired a research-scale Aixtron MOVPE reactor in 2000 aiming the development of III-V multi-junction concentrator solar cells in a pilot production line. In this paper, a thorough review of the MOVPE technology is presented. Then, the specific configuration, its potentialities and the research being made today at the I.E.S -U.P.M is described. Finally, the achievements and future prospects are explained.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122088982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Molecular dynamics study of damage generation mechanisms in silicon at the low energy regime 低能状态下硅损伤产生机制的分子动力学研究
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383990
I. Santos, L. Marqués, L. Pelaz, P. López
{"title":"Molecular dynamics study of damage generation mechanisms in silicon at the low energy regime","authors":"I. Santos, L. Marqués, L. Pelaz, P. López","doi":"10.1109/SCED.2007.383990","DOIUrl":"https://doi.org/10.1109/SCED.2007.383990","url":null,"abstract":"We have used classical molecular dynamics simulations to study the damage generation mechanisms in silicon for energy transfers below the atomic displacement energy. These low energy interactions, usually ignored in binary collision based models, establish the difference in damage morphology for different ions. Our work is focused on determining the conditions under which amorphous pockets are formed using a molecular dynamics simulation scheme. We have incorporated the effect of low energy interactions in a binary collision model using our simulation results. This improved model is able to reproduce the damage structures obtained with molecular dynamics but with a much lower computational cost.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116104709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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