Monte Carlo analysis of carrier transport from diffusive to ballistic regime in nanometer SOI MOSFETs

Abstract

A Monte Carlo investigation of carrier transport in scaled FDSOI MOSFETs is presented, with particular attention to the onset of quasi-ballistic transport. Results show that for gate lengths below 30 nm quasi-ballistic transport becomes dominant, thus noticeably modifying the ideally scaled properties of the transistors. Impurity screening plays an important role on the determination of the electron transit time through the channel, particularly at low drain voltages.