Two-dimensional Simulation of Current Self-Distribution in Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

Abstract

We present a two-dimensional static model of vertical-cavity surface-emitting lasers. The model is based on the self-consistent solution of the semiconductor and photon rate equations throughout the entire epitaxial structure in the vertical and lateral directions. A typical top-emitting index-guided structure is simulated and the current self-distribution effect is analyze by plotting the lateral carrier and current density profiles along the active region.