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2007 Spanish Conference on Electron Devices最新文献

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Shading effects in characteristic parameters of PV modules 光伏组件特性参数中的遮阳效应
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384007
S. Silvestre, A. Chouder
{"title":"Shading effects in characteristic parameters of PV modules","authors":"S. Silvestre, A. Chouder","doi":"10.1109/SCED.2007.384007","DOIUrl":"https://doi.org/10.1109/SCED.2007.384007","url":null,"abstract":"Main characteristic parameters of a PV module present substantial variations in case of partial shading, resulting in important reductions of the output power. A commercial PV module formed by 36 solar cells in series has been tested varying the shadow rate of one of its cells and changes in most important characteristic parameters have been analyzed. Using parameter extraction techniques we have obtained the evolution of series and shunt resistance of the PV module in function of shadow rate.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134056967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Emitter Pedestal Design of GaInP/GaAs Heterojunction Bipolar Transistors GaInP/GaAs异质结双极晶体管发射极座设计
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384065
J. López-González
{"title":"Emitter Pedestal Design of GaInP/GaAs Heterojunction Bipolar Transistors","authors":"J. López-González","doi":"10.1109/SCED.2007.384065","DOIUrl":"https://doi.org/10.1109/SCED.2007.384065","url":null,"abstract":"This paper shows some consequences of the design of the emitter pedestal in the electric DC and AC performance of GalnP/GaAs Heterojunction Bipolar Transistors. Two HBT transistors are compared which have the same wafer area and base and collector contact areas, and very similar cutoff frequency and maximum frequency, approximately 80 and 40 GHz. The results show that it is possible to optimize the heterojunction bipolar transistor design keeping the MMIC rules and the wafer area utilized.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133629299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Increase on Siemens Reactor Throughput by Tailoring Temperature Profile of Polysilicon Rods 通过调整多晶硅棒的温度分布来提高西门子反应器的吞吐量
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383955
G. del Coso, C. del Cañizo, I. Tobías, A. Luque
{"title":"Increase on Siemens Reactor Throughput by Tailoring Temperature Profile of Polysilicon Rods","authors":"G. del Coso, C. del Cañizo, I. Tobías, A. Luque","doi":"10.1109/SCED.2007.383955","DOIUrl":"https://doi.org/10.1109/SCED.2007.383955","url":null,"abstract":"Siemens process productivity can be limited by non homogeneous temperature profile in polysilicon rods. To overcome this limitation high frequency current sources have been proposed. An analysis is presented which, based on electromagnetic and heat transfer theory, studies temperature and current density profiles within the rods. Two linked differential equations have been numerically solved by use of non-linear methods. The solution of these equations shows that by means of an increase in current frequency, skin effect takes place, heat generation in the inner part of the rod is decreased and therefore temperature homogeneity increases. The effect of high frequency current sources in the rod stability is also analyzed, and it can be derived that resonance problems could appear.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"8 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114995413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Monte Carlo simulation of AlGaN/GaN heterostructures AlGaN/GaN异质结构的蒙特卡罗模拟
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.383999
J. Mateos, S. Pérez, I. Íñiguez-de-la-Torre, D. Pardo, T. González
{"title":"Monte Carlo simulation of AlGaN/GaN heterostructures","authors":"J. Mateos, S. Pérez, I. Íñiguez-de-la-Torre, D. Pardo, T. González","doi":"10.1109/SCED.2007.383999","DOIUrl":"https://doi.org/10.1109/SCED.2007.383999","url":null,"abstract":"We have developed an ensemble Monte Carlo simulator self-consistently coupled with a 2D Poisson solver for the analysis of AlGaN/GaN and related heterostructures. Special attention has been paid to the implementation of dislocation scattering, allowing to correctly reproduce the measured electron mobility in the GaN channel of the heterostructures. The influence of surface polarization charges at the AlGaN/GaN interface (which leads to an enhanced electron accumulation in the channel) and surface charges at the semiconductor-air interface on the conduction band profile and electron density in the channel has been studied.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"12 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120901343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Quasi-3D Model of Edge-emitting Lasers Accounting for Coherent and Incoherent Coupling of Lateral Modes 考虑横向模相干和非相干耦合的边缘发射激光器准三维模型
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384006
J. Tijero, H. Odriozola, L. Borruel, I. Esquivias
{"title":"Quasi-3D Model of Edge-emitting Lasers Accounting for Coherent and Incoherent Coupling of Lateral Modes","authors":"J. Tijero, H. Odriozola, L. Borruel, I. Esquivias","doi":"10.1109/SCED.2007.384006","DOIUrl":"https://doi.org/10.1109/SCED.2007.384006","url":null,"abstract":"We present a quasi-three dimensional (3D) simulation model for edge-emitting lasers based on the propagation of a guess initial field forward and backward along the cavity until an stable solution is found. The bipolar complete semiconductor and the thermal equations are solved in 3D. The electro-thermal solver is coupled to a 2D beam propagation method that makes use of the effective index approximation. The model is applied to the simulation of ridge waveguide lasers. Two different approaches regarding the symmetry of the photon density are presented and discussed in what concerns their relationship with the coherent and incoherent coupling of lateral modes in real devices.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122845746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermophotovoltaic Systems based on Gallium Antimonide Infrared Cells 基于锑化镓红外电池的热光伏系统
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384048
D. Martin, A. Datas, V. Corregidor, C. Algora
{"title":"Thermophotovoltaic Systems based on Gallium Antimonide Infrared Cells","authors":"D. Martin, A. Datas, V. Corregidor, C. Algora","doi":"10.1109/SCED.2007.384048","DOIUrl":"https://doi.org/10.1109/SCED.2007.384048","url":null,"abstract":"This paper overviews the fundamentals of the thermophotovoltaic systems, which convert infrared radiation into electricity by means of photovoltaic cells. First, the basic configuration and the main system components are discussed, and a short description of their most important applications is carried out. Besides, the manufacture of gallium antimonide infrared cells is presented, and their typical optical and electrical characteristics are analyzed.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123823481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum Dot Infrared Photodetector for mid-infrared detection at high temperatures 用于高温中红外探测的量子点红外光电探测器
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384059
R. Gargallo-Caballero, M. Sanz, A. Guzmán, E. Calleja, E. Muñoz
{"title":"Quantum Dot Infrared Photodetector for mid-infrared detection at high temperatures","authors":"R. Gargallo-Caballero, M. Sanz, A. Guzmán, E. Calleja, E. Muñoz","doi":"10.1109/SCED.2007.384059","DOIUrl":"https://doi.org/10.1109/SCED.2007.384059","url":null,"abstract":"In this work, InAs quantum dot infrared photodetectors (QDIPs) have been grown in this work by molecular beam epitaxy (MBE) growth for the detection of the mid-wavelength infrared radiation (MWIR). Firstly, we carried out an optimization of the growth conditions of the InAs quantum dots (QD), and later we designed and grew the device heterostructure with an active zone located between two AlGaAs barriers and using a modulation doping technique. As confirmed by spectral response measurements, our QDIPs were sensible in the 3-5 mum region, achieving operating temperatures as high as 150 K.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125228309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Near Room Temperature InAs Quantum Wires Lasers on InP at Short Wavelength Infrared 近室温InAs量子线在InP短波长红外上的激光器
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384055
F. Suárez, D. Fuster, L. González, Y. González, J.M. Garcia, M. L. Dotor
{"title":"Near Room Temperature InAs Quantum Wires Lasers on InP at Short Wavelength Infrared","authors":"F. Suárez, D. Fuster, L. González, Y. González, J.M. Garcia, M. L. Dotor","doi":"10.1109/SCED.2007.384055","DOIUrl":"https://doi.org/10.1109/SCED.2007.384055","url":null,"abstract":"In this work, we present results on the growth by atomic layer molecular beam epitaxy and characterization of lasers with three stacked layers of InAs quantum wires (QWR) as active zone and aluminum free waveguides on (001) InP substrates. The separated confinement heterostructure consists of n-p InP claddings and a waveguide formed by short period superlattices of (InP)5/(GaInAs)4 lattice matched to the InP substrate. The optimum growth conditions (substrate temperature and As and P pressures) have been determined to obtain waveguides with a flat surface in order to get an uniform QWR distribution. Lasing emission is observed at a wavelength of -1.66 mum up to 280K from 40mum x 1000mum devices, with a threshold current density at that temperature of 3.6 kA/cm2.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116855498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Highly asymmetric antiferroelectric liquid crystal displays 高度不对称反铁电液晶显示器
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384047
M. Geday, V. Urruchi, N. Bennis, A. Spadlo, E. Martinelli, G. Galli, X. Quintana, J. Otón
{"title":"Highly asymmetric antiferroelectric liquid crystal displays","authors":"M. Geday, V. Urruchi, N. Bennis, A. Spadlo, E. Martinelli, G. Galli, X. Quintana, J. Otón","doi":"10.1109/SCED.2007.384047","DOIUrl":"https://doi.org/10.1109/SCED.2007.384047","url":null,"abstract":"Antiferroelectric liquid crystals (AFLCs) have been, for a while, promising candidates for display applications. However, their success has been hindered by a poor dark state, and hence a reduced contrast. Various solutions to this problem have been proposed, hereunder the use of so-called orthoconic materials with cone angles close to 45deg and asymmetric cells, where the alignment materials on the two ITO-electrodes are not the same. Whereas the orthoconic materials in theory provide the most elegant solution, the available materials commute too slowly for most live image applications. The asymmetric cells on the other hand, maintain the fast switching inherent to most AFLC devices, and they show a much improved off state. However, they have up to now showed the very undesirable feature of memory effect, i.e. the transmission of a pixel in one frame depends on the transmission of the previous. In this work we use asymmetric cells, where one of the ITO-electrodes is covered with low energy surface material (a fluorinated block copolymer (FBC)), which are characterised by an unusually large voltage shift in the electro-optical response. We exploit the large voltage shift to employ an efficient erasing strategy, to reduce the memory of the device, and we eliminate any flickering of the device by only addressing the grey levels in one of the hysteresis loops.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114348232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of dielectric degradation and breakdown in MOSFETs characteristics. Impact on digital and analog circuits. 介电退化和击穿对mosfet特性的影响。对数字和模拟电路的影响。
2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI: 10.1109/SCED.2007.384013
R. Fernández, J. Martín-Martínez, R. Rodríguez, M. Nafría, Y. Aymerich
{"title":"Effects of dielectric degradation and breakdown in MOSFETs characteristics. Impact on digital and analog circuits.","authors":"R. Fernández, J. Martín-Martínez, R. Rodríguez, M. Nafría, Y. Aymerich","doi":"10.1109/SCED.2007.384013","DOIUrl":"https://doi.org/10.1109/SCED.2007.384013","url":null,"abstract":"To clarify the impact of the gate oxide degradation and breakdown (BD) on CMOS circuits functionality it is necessary to develop models for broken down devices that can be included in circuit simulators. Transistors with different geometries have been experimentally stressed to provoke oxide degradation and BD. The transistors characteristic curves after degradation have been fitted with SPICE BSIM4 model. The extracted model parameters have been included in a circuit simulator to study the effect of the oxide degradation and BD on analog (current mirror) and digital (RS latches) circuits. The separate influence on the current mirror performance of the BD gate current and the variation of transistor BSIM parameters has also been analyzed.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129625137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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