F. Suárez, D. Fuster, L. González, Y. González, J.M. Garcia, M. L. Dotor
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引用次数: 1
摘要
在这项工作中，我们介绍了原子层分子束外延生长的结果，以及在(001)InP衬底上以三层堆叠的InAs量子线(QWR)作为有源区和无铝波导的激光器的特性。分离约束异质结构由n-p InP包层和由与InP衬底匹配的(InP)5/(GaInAs)4晶格的短周期超晶格构成的波导组成。为了获得均匀的量子波比分布，确定了最佳生长条件(衬底温度和As和P压力)以获得具有平坦表面的波导。从40mum x 1000mum器件中观察到波长为-1.66 mum至280K的激光发射，该温度下的阈值电流密度为3.6 kA/cm2。
Near Room Temperature InAs Quantum Wires Lasers on InP at Short Wavelength Infrared
In this work, we present results on the growth by atomic layer molecular beam epitaxy and characterization of lasers with three stacked layers of InAs quantum wires (QWR) as active zone and aluminum free waveguides on (001) InP substrates. The separated confinement heterostructure consists of n-p InP claddings and a waveguide formed by short period superlattices of (InP)5/(GaInAs)4 lattice matched to the InP substrate. The optimum growth conditions (substrate temperature and As and P pressures) have been determined to obtain waveguides with a flat surface in order to get an uniform QWR distribution. Lasing emission is observed at a wavelength of -1.66 mum up to 280K from 40mum x 1000mum devices, with a threshold current density at that temperature of 3.6 kA/cm2.
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