Monte Carlo simulation of AlGaN/GaN heterostructures

We have developed an ensemble Monte Carlo simulator self-consistently coupled with a 2D Poisson solver for the analysis of AlGaN/GaN and related heterostructures. Special attention has been paid to the implementation of dislocation scattering, allowing to correctly reproduce the measured electron mobility in the GaN channel of the heterostructures. The influence of surface polarization charges at the AlGaN/GaN interface (which leads to an enhanced electron accumulation in the channel) and surface charges at the semiconductor-air interface on the conduction band profile and electron density in the channel has been studied.