用于射频和噪声模拟的纳米级双栅MOSFET的紧凑量子模型

2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI:10.1109/SCED.2007.384067

A. Lázaro, B. Nae, O. Moldovan, B. Iñíguez

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引用次数: 2

摘要

本文提出了一种新的纳米双栅MOSFET的射频和微波噪声分析模型。该模型基于通道内电荷量子化的紧凑模型，并考虑了超调速度效应。采用有源传输线法，对其射频性能和噪声性能进行了计算。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Compact Quantum Model of Nanoscale Double-Gate MOSFET for RF and Noise Simulations

In this paper, we present a new analytical model for RF and microwave noise model of nanoscale double-gate MOSFET. The model is based on a compact model for charge quantization within the channel and it includes overshoot velocity effects. Using the active transmission line method, we calculate the RF and noise performance.

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2007 Spanish Conference on Electron Devices

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