{"title":"氧化受限垂直腔面发射激光器电流自分布的二维模拟","authors":"J. Arias, L. Borruel, B. Romero, I. Esquivias","doi":"10.1109/SCED.2007.384008","DOIUrl":null,"url":null,"abstract":"We present a two-dimensional static model of vertical-cavity surface-emitting lasers. The model is based on the self-consistent solution of the semiconductor and photon rate equations throughout the entire epitaxial structure in the vertical and lateral directions. A typical top-emitting index-guided structure is simulated and the current self-distribution effect is analyze by plotting the lateral carrier and current density profiles along the active region.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Two-dimensional Simulation of Current Self-Distribution in Oxide-Confined Vertical-Cavity Surface-Emitting Lasers\",\"authors\":\"J. Arias, L. Borruel, B. Romero, I. Esquivias\",\"doi\":\"10.1109/SCED.2007.384008\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a two-dimensional static model of vertical-cavity surface-emitting lasers. The model is based on the self-consistent solution of the semiconductor and photon rate equations throughout the entire epitaxial structure in the vertical and lateral directions. A typical top-emitting index-guided structure is simulated and the current self-distribution effect is analyze by plotting the lateral carrier and current density profiles along the active region.\",\"PeriodicalId\":108254,\"journal\":{\"name\":\"2007 Spanish Conference on Electron Devices\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-07-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Spanish Conference on Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SCED.2007.384008\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SCED.2007.384008","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two-dimensional Simulation of Current Self-Distribution in Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
We present a two-dimensional static model of vertical-cavity surface-emitting lasers. The model is based on the self-consistent solution of the semiconductor and photon rate equations throughout the entire epitaxial structure in the vertical and lateral directions. A typical top-emitting index-guided structure is simulated and the current self-distribution effect is analyze by plotting the lateral carrier and current density profiles along the active region.
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