Study of the Corner Effects on Pi-Gate SOI MOSFETs

Abstract

Multiple gate SOI MOSFETs can give rise to the formation of independent channels with different threshold voltages. This phenomenon is the so called corner effects. In this work, we have carried out a thorough study of the corner effects on a Pi-Gate SOI MOSFET. To get our goal, we have developed a numerical simulator that solves the 2D Schrodinger-Poisson equations self-consistently in the structure under study.