用于射频和噪声应用的纳米级双栅MOSFET的CAD模型，包括量子和非平稳效应

2007 Spanish Conference on Electron Devices Pub Date : 2007-07-16 DOI:10.1109/SCED.2007.384066

A. Lázaro, B. Nae, O. Moldovan, B. Iñíguez

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引用次数: 0

摘要

本文提出了一种建立纳米双栅MOSFET分析模型的新方法。等效电路考虑在完全分布的有源线路上，打开了获得紧凑统一的小型等效电路的大门，其中包括噪声贡献。

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A CAD model of Nanoscale Double-Gate MOSFET for RF and Noise applications including quantum and non-stationary effects

This paper presents a new approach for an analytical model of nanoscale double-gate (DG) MOSFET. The equivalent circuit is considered over a fully distributed active line, opening the door to obtain a compact and unified small equivalent circuit that includes noise contributions.

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2007 Spanish Conference on Electron Devices

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