Noise study in photodiodes based on InGaN/GaN MQW

Abstract

The low frequency noise characteristics of InGaN/GaN multiple-quantum-well (MQW) P-I-N photodiodes have been studied. 1/f noise has been measured for two different In contents, under different reverse bias voltages and variable temperatures from 25 K to 623 K. Multilevel random telegraph signal (RTS) noise was found in several samples. The spectral response was measured in photovoltaic and biased mode. Specific detectivity was evaluated at various reverse voltages at temperatures up to 300degC. InGaN/GaN MQW photodiodes have been demonstrated to be a viable alternative for high temperature operation.