“平均场”近似在纳米器件精确模拟中的局限性的半经典研究

G. Albareda, J. Suñé, X. Oriols
{"title":"“平均场”近似在纳米器件精确模拟中的局限性的半经典研究","authors":"G. Albareda, J. Suñé, X. Oriols","doi":"10.1109/SCED.2007.383994","DOIUrl":null,"url":null,"abstract":"For nanoscale electron devices, the role of a single-electron (or a single-impurity) can have a large impact on their electrical characteristics. A new method for introducing the long-range and short-range Coulomb interaction in Monte Carlo particle based simulations is presented. The method is based on directly dealing with a many-particle system by solving a different Poisson equation for each electron. The present work shows the numerical viability of this approach for the accurate simulation of nanoscale devices. The method is compared with the traditional \"mean-field\" approximation used in Monte Carlo simulators. The incapability of the \"mean field\" approximation to deal with the short-range Coulomb interaction is manifested. It is shown, numerically, that the \"mean-field\" approximation produces dramatic errors when small spatial steps are used.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Semi-classical study of the limitations of the \\\"mean-field\\\" approximation for the accurate simulation of nanometric devices\",\"authors\":\"G. Albareda, J. Suñé, X. Oriols\",\"doi\":\"10.1109/SCED.2007.383994\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For nanoscale electron devices, the role of a single-electron (or a single-impurity) can have a large impact on their electrical characteristics. A new method for introducing the long-range and short-range Coulomb interaction in Monte Carlo particle based simulations is presented. The method is based on directly dealing with a many-particle system by solving a different Poisson equation for each electron. The present work shows the numerical viability of this approach for the accurate simulation of nanoscale devices. The method is compared with the traditional \\\"mean-field\\\" approximation used in Monte Carlo simulators. The incapability of the \\\"mean field\\\" approximation to deal with the short-range Coulomb interaction is manifested. It is shown, numerically, that the \\\"mean-field\\\" approximation produces dramatic errors when small spatial steps are used.\",\"PeriodicalId\":108254,\"journal\":{\"name\":\"2007 Spanish Conference on Electron Devices\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Spanish Conference on Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SCED.2007.383994\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SCED.2007.383994","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

对于纳米级电子器件,单电子(或单杂质)的作用会对其电特性产生很大的影响。提出了一种在蒙特卡罗粒子模拟中引入远距离和短程库仑相互作用的新方法。该方法通过对每个电子求解不同的泊松方程来直接处理多粒子系统。目前的工作表明了这种方法在纳米级器件精确模拟中的数值可行性。将该方法与蒙特卡罗模拟机中使用的传统“平均场”近似方法进行了比较。证明了“平均场”近似在处理近程库仑相互作用时的无能。数值表明,当使用小的空间步长时,“平均场”近似会产生巨大的误差。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Semi-classical study of the limitations of the "mean-field" approximation for the accurate simulation of nanometric devices
For nanoscale electron devices, the role of a single-electron (or a single-impurity) can have a large impact on their electrical characteristics. A new method for introducing the long-range and short-range Coulomb interaction in Monte Carlo particle based simulations is presented. The method is based on directly dealing with a many-particle system by solving a different Poisson equation for each electron. The present work shows the numerical viability of this approach for the accurate simulation of nanoscale devices. The method is compared with the traditional "mean-field" approximation used in Monte Carlo simulators. The incapability of the "mean field" approximation to deal with the short-range Coulomb interaction is manifested. It is shown, numerically, that the "mean-field" approximation produces dramatic errors when small spatial steps are used.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信