{"title":"“平均场”近似在纳米器件精确模拟中的局限性的半经典研究","authors":"G. Albareda, J. Suñé, X. Oriols","doi":"10.1109/SCED.2007.383994","DOIUrl":null,"url":null,"abstract":"For nanoscale electron devices, the role of a single-electron (or a single-impurity) can have a large impact on their electrical characteristics. A new method for introducing the long-range and short-range Coulomb interaction in Monte Carlo particle based simulations is presented. The method is based on directly dealing with a many-particle system by solving a different Poisson equation for each electron. The present work shows the numerical viability of this approach for the accurate simulation of nanoscale devices. The method is compared with the traditional \"mean-field\" approximation used in Monte Carlo simulators. The incapability of the \"mean field\" approximation to deal with the short-range Coulomb interaction is manifested. It is shown, numerically, that the \"mean-field\" approximation produces dramatic errors when small spatial steps are used.","PeriodicalId":108254,"journal":{"name":"2007 Spanish Conference on Electron Devices","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Semi-classical study of the limitations of the \\\"mean-field\\\" approximation for the accurate simulation of nanometric devices\",\"authors\":\"G. Albareda, J. Suñé, X. Oriols\",\"doi\":\"10.1109/SCED.2007.383994\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For nanoscale electron devices, the role of a single-electron (or a single-impurity) can have a large impact on their electrical characteristics. A new method for introducing the long-range and short-range Coulomb interaction in Monte Carlo particle based simulations is presented. The method is based on directly dealing with a many-particle system by solving a different Poisson equation for each electron. The present work shows the numerical viability of this approach for the accurate simulation of nanoscale devices. The method is compared with the traditional \\\"mean-field\\\" approximation used in Monte Carlo simulators. The incapability of the \\\"mean field\\\" approximation to deal with the short-range Coulomb interaction is manifested. It is shown, numerically, that the \\\"mean-field\\\" approximation produces dramatic errors when small spatial steps are used.\",\"PeriodicalId\":108254,\"journal\":{\"name\":\"2007 Spanish Conference on Electron Devices\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Spanish Conference on Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SCED.2007.383994\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SCED.2007.383994","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Semi-classical study of the limitations of the "mean-field" approximation for the accurate simulation of nanometric devices
For nanoscale electron devices, the role of a single-electron (or a single-impurity) can have a large impact on their electrical characteristics. A new method for introducing the long-range and short-range Coulomb interaction in Monte Carlo particle based simulations is presented. The method is based on directly dealing with a many-particle system by solving a different Poisson equation for each electron. The present work shows the numerical viability of this approach for the accurate simulation of nanoscale devices. The method is compared with the traditional "mean-field" approximation used in Monte Carlo simulators. The incapability of the "mean field" approximation to deal with the short-range Coulomb interaction is manifested. It is shown, numerically, that the "mean-field" approximation produces dramatic errors when small spatial steps are used.