Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)最新文献_第6页

Establishment of process monitoring for production availability improvement 建立过程监控以改善产品可用性

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993690

T. Noji, T. Suzuki

引用次数: 4

A next queue algorithm in real time dispatching system of semiconductor manufacturing 半导体制造实时调度系统中的下一队列算法

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993618

Ying-Jen Chen, G. Yu., Kuo-sung Huang, Ivan Wang

引用次数: 6

The study of fluorine-doped silicon dioxide (FSG) films property after thermal alloy for different film deposition temperature for sub-0.18 um logic yield improvement 研究了氟掺杂二氧化硅(FSG)薄膜经热合金后的性能，不同的薄膜沉积温度对0.18 um以下的逻辑良率有改善

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993631

S.A. Wu, Y.K. Wang, Y. Cheng, J.K. Wang, G. Wang, M. Yo, C.T. Lee, T. Lu, S. Wang, J. Li, Chen-Ho Lai

{"title":"The study of fluorine-doped silicon dioxide (FSG) films property after thermal alloy for different film deposition temperature for sub-0.18 um logic yield improvement","authors":"S.A. Wu, Y.K. Wang, Y. Cheng, J.K. Wang, G. Wang, M. Yo, C.T. Lee, T. Lu, S. Wang, J. Li, Chen-Ho Lai","doi":"10.1109/ISSM.2000.993631","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993631","url":null,"abstract":"As feature size shrinks to the deep sub-micron regime, the RC delay of metal interconnection will increase and limit the performance of high-speed devices. To address this problem, fluorine-doped silicon dioxide (SiOF) has been introduced in advanced IMD applications. Many deposition methods have been studied, including PECVD and HDP CVD. HDP CVD was finally applied to most deep sub-micron processes because it can meet the gap-filling requirement. However, the fluorine-doped silicon dioxide film is an unstable film. It suffers from high water absorption and a fluorine instability problem. This problem will cause a device reliability issue and even defects to appear at the final alloy step. In this paper, the fluorine-doped silicon dioxide deposition temperature and post-thermal processes, including N2 alloy and vacuum-bake have been studied, find a way to overcome these problems. The fluorine-doped silicon dioxide film properties including the fluorine concentration, RI, and film thickness will be compared to the as-deposition after film is alloyed. The film SIMS and TDS data have also been studied in this paper. The result of the experiments show that a lower deposition temperature has a poorer film property and the post-thermal process can degas the unstable fluorine. The optimized combination of conditions, of fluorine-doped silicon dioxide deposition temperature and post-thermal treatment can create a good quality fluorine-doped silicon dioxide without a reliability issue.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"300 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121456694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Analysis TAT reduction by using emission-leakage failure analysis system 利用排放泄漏失效分析系统分析TAT的降低

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993665

Y. Higuchi, Y. Kawaguchi, T. Sakazume

引用次数: 1

High efficiency airborne molecular contaminants removal technology by a new cooled-type 2-stage high-speed air washer method 新型冷式两级高速空气洗涤法高效去除空气分子污染物技术

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993670

H. Wakamatsu, M. Matsuki, N. Tanaka, H. Ogata, H. Iba, K. Murata

引用次数: 4

Breaking FAB constraint with implementing feedback process control 通过实施反馈过程控制打破FAB约束

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993620

K. Takagaki, N. Matsumoto, L. Idera, T. Ishijima, Y. Ueda

引用次数: 0

Hot-wall batch-type CVD tool for high-k (Ba,Sr)TiO/sub 3/ capacitors 用于高k (Ba,Sr)TiO/sub /电容器的热壁批量CVD工具

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993628

M. Kiyotoshi, S. Yamazaki, J. Nakahira, K. Eguchi, K. Hieda, H. Yamamoto, T. Umehara, K. Hasebe, T. Asano, K. Nakao, T. Arikado, K. Okumura

引用次数: 1

Environmentally conscious IC molding compound without toxic flame-retardants 不含有毒阻燃剂的环保IC成型化合物

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993636

Y. Kiuchi, M. Iji

引用次数: 5

Sub 0.2 /spl mu/m lithography on 300 mm wafer 在300mm晶圆片上的光刻速度低于0.2 /spl μ m

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993616

D. Ganz, A. Charles, S. Hornig, G. Hraschan, Wolfram Koestler, J. Maltabes, T. Schedel, S. Schmidt, K. Mautz, R. Schuster

引用次数: 0

Capturing expert knowledge [semiconductor manufacturing] 获取专业知识[半导体制造]

Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993622

F. J. Sànchez

{"title":"Capturing expert knowledge [semiconductor manufacturing]","authors":"F. J. Sànchez","doi":"10.1109/ISSM.2000.993622","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993622","url":null,"abstract":"Why is it that some people can perform a task with greater precision and accuracy than others? What knowledge do they possess that qualifies them as experts? How do they consistently outperform peers who follow the same set of procedures? In the past experts were interviewed to get the answers to these questions, but this was not always effective because often experts \"don't know what they know.\" A method was needed to capture the subconscious knowledge of the expert as well as skill proficiency. Accelerated breakthrough systems (ABS) is a methodology that was developed to do just that. The goal is to capture expert knowledge and document best-known methods (BKMs) through video based observation, raising an entire work group's performance to the expert level. The ABS process is a proven methodology for capturing expert knowledge. The six-phase method is a documented system that can be applied to a variety of knowledge and tasks, making it transferable across any function. The process is lead by a certified ABS specialist. Organizations can apply the process to close performance gaps on critical tasks dealing with equipment, process, operations or abstract dynamic skills. The key is to identify and document expert subconscious knowledge. ABS \"taps in\" via videotape analysis.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133080429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3