{"title":"Analysis TAT reduction by using emission-leakage failure analysis system","authors":"Y. Higuchi, Y. Kawaguchi, T. Sakazume","doi":"10.1109/ISSM.2000.993665","DOIUrl":null,"url":null,"abstract":"Current leakage is the major failure mode of semiconductor device characteristic failures. Conventionally, failures such as short circuit breaks and gate breakdowns have been analyzed and the detected causes have been reflected in the fabrication process. By using a wafer-level emission-leakage failure analysis method (in-line QC), we analyzed leakage mode failure, which is the major failure detected during the probe inspection process for LSIs, typically DRAMs and CMOS logic LSIs. We have thus developed a new technique that copes with the critical structural failures and random failures that directly affect probe yields.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2000.993665","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Current leakage is the major failure mode of semiconductor device characteristic failures. Conventionally, failures such as short circuit breaks and gate breakdowns have been analyzed and the detected causes have been reflected in the fabrication process. By using a wafer-level emission-leakage failure analysis method (in-line QC), we analyzed leakage mode failure, which is the major failure detected during the probe inspection process for LSIs, typically DRAMs and CMOS logic LSIs. We have thus developed a new technique that copes with the critical structural failures and random failures that directly affect probe yields.