Analysis TAT reduction by using emission-leakage failure analysis system

Y. Higuchi, Y. Kawaguchi, T. Sakazume
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引用次数: 1

Abstract

Current leakage is the major failure mode of semiconductor device characteristic failures. Conventionally, failures such as short circuit breaks and gate breakdowns have been analyzed and the detected causes have been reflected in the fabrication process. By using a wafer-level emission-leakage failure analysis method (in-line QC), we analyzed leakage mode failure, which is the major failure detected during the probe inspection process for LSIs, typically DRAMs and CMOS logic LSIs. We have thus developed a new technique that copes with the critical structural failures and random failures that directly affect probe yields.
利用排放泄漏失效分析系统分析TAT的降低
漏电流是半导体器件特性失效的主要失效方式。传统的故障分析方法是对短路和栅极击穿等故障进行分析,并将检测到的故障原因反映在制造过程中。通过使用晶圆级发射泄漏失效分析方法(在线QC),我们分析了泄漏模式失效,这是lsi探针检测过程中检测到的主要故障,通常是dram和CMOS逻辑lsi。因此,我们开发了一种新技术,可以处理直接影响探针产量的关键结构失效和随机失效。
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